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IRFP22N60KPBF-VB Product details
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IRFP22N60KPBF-VB Product Introduction
IRFP22N60KPBF-VB is a high-voltage single-channel N-type MOSFET with a TO247 package type. Designed for high-voltage and high-power applications, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) rating of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), supporting a continuous drain current of up to 20A. This MOSFET uses SJ_Multi-EPI (silicon channel multilayer structure) technology, has good high-voltage performance and stability, and is very suitable for use in high-voltage environments.
IRFP22N60KPBF-VB is a high-voltage single-channel N-type MOSFET with a TO247 package type. Designed for high-voltage and high-power applications, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) rating of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), supporting a continuous drain current of up to 20A. This MOSFET uses SJ_Multi-EPI (silicon channel multilayer structure) technology, has good high-voltage performance and stability, and is very suitable for use in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP22N60KPBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Silicon Channel Multilayer Structure)
- **Maximum power consumption**: Depending on operating conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Silicon Channel Multilayer Structure)
- **Maximum power consumption**: Depending on operating conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
Domain and module applications：
Applicable fields and modules
The high voltage withstand capability and moderate on-resistance of the IRFP22N60KPBF-VB MOSFET make it very suitable for the following application areas:
1. **High-voltage switching power supply**: This MOSFET is very suitable for high-voltage switching power supplies (such as AC-DC converters). Its high voltage withstand capability of 650V enables it to handle higher input voltages, while its low on-resistance ensures efficient power conversion.
2. **Industrial power control**: In industrial applications, the IRFP22N60KPBF-VB can be used to control high-voltage power supplies such as motor drive systems and power modules. Its high current capability and stable high-voltage characteristics ensure reliability in high-load and high-voltage environments.
3. **Inverter system**: In inverter and solar power generation systems, this MOSFET can effectively handle high-voltage DC power and convert it into AC power, and is suitable for high-voltage, high-power inverter circuits.
4. **Power amplifier**: This MOSFET can also be used in power amplifier circuits, especially in high voltage applications, to ensure stable switching performance and power handling capabilities.
5. **Welding equipment**: In arc welding or other high voltage welding equipment, the high voltage withstand capability and excellent conduction characteristics of this MOSFET make it a key switching element to ensure efficient and safe welding process.
The high voltage withstand capability and moderate on-resistance of the IRFP22N60KPBF-VB MOSFET make it very suitable for the following application areas:
1. **High-voltage switching power supply**: This MOSFET is very suitable for high-voltage switching power supplies (such as AC-DC converters). Its high voltage withstand capability of 650V enables it to handle higher input voltages, while its low on-resistance ensures efficient power conversion.
2. **Industrial power control**: In industrial applications, the IRFP22N60KPBF-VB can be used to control high-voltage power supplies such as motor drive systems and power modules. Its high current capability and stable high-voltage characteristics ensure reliability in high-load and high-voltage environments.
3. **Inverter system**: In inverter and solar power generation systems, this MOSFET can effectively handle high-voltage DC power and convert it into AC power, and is suitable for high-voltage, high-power inverter circuits.
4. **Power amplifier**: This MOSFET can also be used in power amplifier circuits, especially in high voltage applications, to ensure stable switching performance and power handling capabilities.
5. **Welding equipment**: In arc welding or other high voltage welding equipment, the high voltage withstand capability and excellent conduction characteristics of this MOSFET make it a key switching element to ensure efficient and safe welding process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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