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IRFP22N50APBF-VB Product details

Product introduction:

1. IRFP22N50APBF-VB Product Introduction

IRFP22N50APBF-VB is a high voltage N-channel MOSFET manufactured using SJ_Multi-EPI technology with a drain-source voltage capability of 500V and a low on-resistance of 80mΩ. This MOSFET is packaged in a TO-247 housing and is suitable for high voltage and high power switching applications. It is able to operate stably at drain currents up to 40A and can withstand a maximum VGS of ±30V. The high voltage withstand characteristics of the IRFP22N50APBF-VB make it ideal for power management systems that require high voltage handling and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IRFP22N50APBF-VB Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power consumption (Ptot)**: 160W
- **Switching time**: Suitable for medium frequency applications with reasonable switching time

Domain and module applications:

3. Applications and Module Examples

The high voltage capability and low on-resistance of the IRFP22N50APBF-VB MOSFET make it excellent in the following applications:

1. **Power Converters and Inverters**: In high voltage DC-DC converters and AC power inverters, this MOSFET can effectively handle high voltage and high power loads, ensuring efficient energy conversion and system stability. It is particularly suitable for solar inverters and uninterruptible power supply (UPS) systems.

2. **High Voltage Switching Applications**: This MOSFET is ideal for switching circuits that require high voltage switching, such as high voltage power switches, relay drivers, etc. It can withstand high voltages of 500V while providing stable current control with low on-resistance.

3. **Industrial Motor Drive**: In industrial motor drive systems, the IRFP22N50APBF-VB can be used to control the switching and regulation of high voltage motors, especially in situations where high voltage and high current are required, such as control systems for large motors.

4. **Power Management System**: In high voltage power management modules, this MOSFET can provide stable performance and is suitable for battery management systems, power supply modules, etc. to ensure reliable current and voltage control.

The design of IRFP22N50APBF-VB enables it to provide excellent performance in demanding high voltage applications, helping to achieve efficient power management and reliable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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