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IRFP150APBF-VB Product details
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IRFP150APBF-VB MOSFET Product Introduction:
IRFP150APBF-VB is a high-performance single N-channel MOSFET in TO3P package, manufactured using advanced trench technology. This MOSFET has a high drain-source voltage (VDS) and high current handling capability, suitable for applications requiring high power and high efficiency. Its threshold voltage (Vth) is 1.8V, on-resistance (RDS(ON)) is 18mΩ@VGS=10V, and maximum drain current (ID) is 65A, making it an ideal choice for high current and high voltage applications.
IRFP150APBF-VB is a high-performance single N-channel MOSFET in TO3P package, manufactured using advanced trench technology. This MOSFET has a high drain-source voltage (VDS) and high current handling capability, suitable for applications requiring high power and high efficiency. Its threshold voltage (Vth) is 1.8V, on-resistance (RDS(ON)) is 18mΩ@VGS=10V, and maximum drain current (ID) is 65A, making it an ideal choice for high current and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
IRFP150APBF-VB Detailed parameter description:
- **Model**: IRFP150APBF-VB
- **Package**: TO3P
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
- **Model**: IRFP150APBF-VB
- **Package**: TO3P
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applications and modules:
1. **High-power switching power supply**: The high drain current and low on-resistance of the IRFP150APBF-VB make it ideal for use in high-power switching power supplies, such as server power supplies and industrial power supplies, to ensure high efficiency and low heat loss.
2. **Motor drive**: Due to its ability to handle higher currents and voltages, this MOSFET is widely used in motor drives, such as drive control circuits in electric vehicles, and motor control systems in industrial automation.
3. **Power amplifier**: In applications that need to process high-power signals, such as audio power amplifiers and RF amplifiers, the IRFP150APBF-VB can effectively control power transmission and provide reliable performance.
4. **Power management**: In power management systems, especially in scenarios where high currents are required, such as power distribution and battery management systems in data centers, the IRFP150APBF-VB can be used for efficient current switching and protection circuits.
The high current handling capability and low on-resistance characteristics of the IRFP150APBF-VB make it a reliable choice in high power and high voltage applications.
1. **High-power switching power supply**: The high drain current and low on-resistance of the IRFP150APBF-VB make it ideal for use in high-power switching power supplies, such as server power supplies and industrial power supplies, to ensure high efficiency and low heat loss.
2. **Motor drive**: Due to its ability to handle higher currents and voltages, this MOSFET is widely used in motor drives, such as drive control circuits in electric vehicles, and motor control systems in industrial automation.
3. **Power amplifier**: In applications that need to process high-power signals, such as audio power amplifiers and RF amplifiers, the IRFP150APBF-VB can effectively control power transmission and provide reliable performance.
4. **Power management**: In power management systems, especially in scenarios where high currents are required, such as power distribution and battery management systems in data centers, the IRFP150APBF-VB can be used for efficient current switching and protection circuits.
The high current handling capability and low on-resistance characteristics of the IRFP150APBF-VB make it a reliable choice in high power and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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