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IRFP140N-VB Product details
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1. IRFP140N-VB Product Introduction
IRFP140N-VB is a high-performance single N-channel MOSFET in TO247 package, designed to handle high current and high power applications. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V, making it suitable for applications with low gate drive voltage. Its on-resistance (RDS(ON)) is 35mΩ (at VGS=10V) and supports a maximum drain current of 85A. IRFP140N-VB uses trench technology, which can provide excellent switching performance and low on-resistance, making it very suitable for high current and high voltage switching applications.
IRFP140N-VB is a high-performance single N-channel MOSFET in TO247 package, designed to handle high current and high power applications. The MOSFET has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V, making it suitable for applications with low gate drive voltage. Its on-resistance (RDS(ON)) is 35mΩ (at VGS=10V) and supports a maximum drain current of 85A. IRFP140N-VB uses trench technology, which can provide excellent switching performance and low on-resistance, making it very suitable for high current and high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP140N-VB Detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module description
IRFP140N-VB performs well in the following fields and modules:
1. **High-power switching power supply (SMPS)**: Due to its high current handling capability and low on-resistance, IRFP140N-VB is suitable for the switch tube of high-power switching power supply, which can effectively handle large current, reduce power loss and improve energy efficiency.
2. **DC-DC converter**: In the DC-DC converter, this MOSFET can be used for the switch of the high-current path to achieve efficient voltage conversion and stable output current, especially in applications that require high voltage and high current handling.
3. **Motor drive circuit**: IRFP140N-VB is suitable for the high-power switch part in the motor drive circuit, providing stable current control, supporting efficient motor drive and power management.
4. **Power amplifier circuit**: In audio power amplifier or RF power amplifier, this MOSFET can be used in the high power output stage to ensure stable power output and low heat loss.
5. **Power management and protection circuit**: In the power management system, IRFP140N-VB can be used in functional modules such as over-current protection and over-voltage protection to provide reliable current switching and protection functions to ensure system safety and stability.
These application areas demonstrate the superior performance of IRFP140N-VB in high current and high voltage applications, making it an ideal choice for multiple high power switching and control circuits.
IRFP140N-VB performs well in the following fields and modules:
1. **High-power switching power supply (SMPS)**: Due to its high current handling capability and low on-resistance, IRFP140N-VB is suitable for the switch tube of high-power switching power supply, which can effectively handle large current, reduce power loss and improve energy efficiency.
2. **DC-DC converter**: In the DC-DC converter, this MOSFET can be used for the switch of the high-current path to achieve efficient voltage conversion and stable output current, especially in applications that require high voltage and high current handling.
3. **Motor drive circuit**: IRFP140N-VB is suitable for the high-power switch part in the motor drive circuit, providing stable current control, supporting efficient motor drive and power management.
4. **Power amplifier circuit**: In audio power amplifier or RF power amplifier, this MOSFET can be used in the high power output stage to ensure stable power output and low heat loss.
5. **Power management and protection circuit**: In the power management system, IRFP140N-VB can be used in functional modules such as over-current protection and over-voltage protection to provide reliable current switching and protection functions to ensure system safety and stability.
These application areas demonstrate the superior performance of IRFP140N-VB in high current and high voltage applications, making it an ideal choice for multiple high power switching and control circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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