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IRFP048RPBF-VB Product details
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IRFP048RPBF-VB Product Introduction
IRFP048RPBF-VB is a high-performance single-channel N-channel MOSFET with a TO247 package type. This MOSFET is designed for high current and high efficiency applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 7mΩ (at VGS=10V), capable of supporting a continuous drain current of up to 150A. The use of Trench technology gives it excellent switching performance and power handling capabilities, making it very suitable for applications that require high current handling and low power loss.
IRFP048RPBF-VB is a high-performance single-channel N-channel MOSFET with a TO247 package type. This MOSFET is designed for high current and high efficiency applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) rating of ±20V. Its threshold voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 7mΩ (at VGS=10V), capable of supporting a continuous drain current of up to 150A. The use of Trench technology gives it excellent switching performance and power handling capabilities, making it very suitable for applications that require high current handling and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IRFP048RPBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Maximum power consumption**: Depending on operating conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
- **Package type**: TO247
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ (at VGS=10V)
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Maximum power consumption**: Depending on operating conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
Domain and module applications：
Applicable fields and modules
The high current carrying capacity and low on-resistance of the IRFP048RPBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-power DC-DC converter**: In high-power DC-DC converters, this MOSFET can be used as the main switching element and exhibits excellent efficiency when handling large currents. Its low RDS(ON) characteristics help reduce energy losses and improve conversion efficiency.
2. **Electric vehicle drive system**: Due to its drain current carrying capacity of up to 150A, the IRFP048RPBF-VB is very suitable for use in the motor drive circuit of electric vehicles. Its high current handling capability can meet the needs of electric vehicles under acceleration and high load conditions.
3. **Industrial power supply**: In industrial power supply and power amplifier applications, this MOSFET can be used for high-power switching and control circuits. Its high withstand voltage and low on-resistance enable it to work stably under high load conditions.
4. **Power protection**: IRFP048RPBF-VB can be used in power protection circuits, such as controlling the charge and discharge paths in battery management systems to prevent overcurrent conditions and protect batteries and other electronic components.
5. **Inverter and UPS systems**: In inverter and uninterruptible power supply (UPS) systems, the high current capability and low power consumption of IRFP048RPBF-VB can effectively improve the overall efficiency and stability of the system.
The high current carrying capacity and low on-resistance of the IRFP048RPBF-VB MOSFET make it very suitable for the following fields and modules:
1. **High-power DC-DC converter**: In high-power DC-DC converters, this MOSFET can be used as the main switching element and exhibits excellent efficiency when handling large currents. Its low RDS(ON) characteristics help reduce energy losses and improve conversion efficiency.
2. **Electric vehicle drive system**: Due to its drain current carrying capacity of up to 150A, the IRFP048RPBF-VB is very suitable for use in the motor drive circuit of electric vehicles. Its high current handling capability can meet the needs of electric vehicles under acceleration and high load conditions.
3. **Industrial power supply**: In industrial power supply and power amplifier applications, this MOSFET can be used for high-power switching and control circuits. Its high withstand voltage and low on-resistance enable it to work stably under high load conditions.
4. **Power protection**: IRFP048RPBF-VB can be used in power protection circuits, such as controlling the charge and discharge paths in battery management systems to prevent overcurrent conditions and protect batteries and other electronic components.
5. **Inverter and UPS systems**: In inverter and uninterruptible power supply (UPS) systems, the high current capability and low power consumption of IRFP048RPBF-VB can effectively improve the overall efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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