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IRFP048PBF-VB Product details
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1. IRFP048PBF-VB Product Introduction
IRFP048PBF-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is designed to meet the needs of high-current, high-power handling applications. It has low on-resistance (RDS(ON)) and excellent switching performance, making it ideal for high-power switching applications. This MOSFET is packaged in a TO-247 housing, can withstand currents up to 150A, and has a drain-source voltage (VDS) of 60V, while VGS can reach ±20V.
IRFP048PBF-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is designed to meet the needs of high-current, high-power handling applications. It has low on-resistance (RDS(ON)) and excellent switching performance, making it ideal for high-power switching applications. This MOSFET is packaged in a TO-247 housing, can withstand currents up to 150A, and has a drain-source voltage (VDS) of 60V, while VGS can reach ±20V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IRFP048PBF-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Maximum power consumption (Ptot)**: 280W
- **Switching time**: Both rise time and fall time have fast response capability, suitable for high frequency operation
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 7mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Maximum power consumption (Ptot)**: 280W
- **Switching time**: Both rise time and fall time have fast response capability, suitable for high frequency operation
Domain and module applications：
3. Applications and Module Examples
The high current carrying capability and low on-resistance of the IRFP048PBF-VB MOSFET make it ideal for a variety of high-power power management systems and switching devices.
1. **Automotive Electronics**: This MOSFET can be used in automotive power management modules such as DC motor controllers, battery management systems, and on-board chargers. Its low on-resistance ensures low-loss power transmission, extending the system's battery life and improving efficiency.
2. **Switching Mode Power Supply (SMPS)**: Due to its good switching characteristics, the IRFP048PBF-VB is widely used in switch-mode power supplies. It can efficiently handle large currents and reduce conduction losses, ensuring high power density and conversion efficiency.
3. **Inverters and Converters**: In applications such as photovoltaic inverters and UPS (uninterruptible power supply), the device's high current and high-frequency switching capabilities make it a key component that can support efficient energy conversion.
4. **Industrial control systems**: High-power motor drives and power control modules in industry require efficient MOSFETs to manage high-power loads. The IRFP048PBF-VB can provide excellent performance.
This MOSFET can effectively improve the performance and reliability of various power management, conversion and control systems through its strong current carrying capacity and low conduction loss.
The high current carrying capability and low on-resistance of the IRFP048PBF-VB MOSFET make it ideal for a variety of high-power power management systems and switching devices.
1. **Automotive Electronics**: This MOSFET can be used in automotive power management modules such as DC motor controllers, battery management systems, and on-board chargers. Its low on-resistance ensures low-loss power transmission, extending the system's battery life and improving efficiency.
2. **Switching Mode Power Supply (SMPS)**: Due to its good switching characteristics, the IRFP048PBF-VB is widely used in switch-mode power supplies. It can efficiently handle large currents and reduce conduction losses, ensuring high power density and conversion efficiency.
3. **Inverters and Converters**: In applications such as photovoltaic inverters and UPS (uninterruptible power supply), the device's high current and high-frequency switching capabilities make it a key component that can support efficient energy conversion.
4. **Industrial control systems**: High-power motor drives and power control modules in industry require efficient MOSFETs to manage high-power loads. The IRFP048PBF-VB can provide excellent performance.
This MOSFET can effectively improve the performance and reliability of various power management, conversion and control systems through its strong current carrying capacity and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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