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IRFM220BTF-VB Product details
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Product Introduction
IRFM220BTF-VB is an N-channel MOSFET in SOT223 package with 200V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) tolerance. This MOSFET has a turn-on threshold voltage (Vth) of 3V and a low on-resistance (RDS(ON)) of 283mΩ@VGS=10V, suitable for medium current applications, and a maximum continuous drain current (ID) of 3A. The device uses Trench technology to improve switching performance and efficiency while maintaining good voltage resistance and thermal performance, making it suitable for various power applications.
IRFM220BTF-VB is an N-channel MOSFET in SOT223 package with 200V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) tolerance. This MOSFET has a turn-on threshold voltage (Vth) of 3V and a low on-resistance (RDS(ON)) of 283mΩ@VGS=10V, suitable for medium current applications, and a maximum continuous drain current (ID) of 3A. The device uses Trench technology to improve switching performance and efficiency while maintaining good voltage resistance and thermal performance, making it suitable for various power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | 283mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package**: SOT223
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 283mΩ @ VGS=10V
- **Maximum drain current (ID)**: 3A
- **Power consumption (Ptot)**: 1.6W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package**: SOT223
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 283mΩ @ VGS=10V
- **Maximum drain current (ID)**: 3A
- **Power consumption (Ptot)**: 1.6W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply module**: This MOSFET has a high drain-source voltage and low on-resistance, suitable for small and medium power DC-DC converters and isolated and non-isolated switching power supplies. Its Trench technology optimizes switching efficiency, making it perform well in high-frequency switching applications.
2. **LED drive circuit**: IRFM220BTF-VB can be used in LED drive circuits, especially in applications that require high voltage tolerance and low power loss, to ensure stable current control and efficient power conversion.
3. **Industrial control system**: This device can be used in industrial control systems that require high voltage tolerance and reliability, such as motor drive and relay control. Such applications require high voltage and high frequency switching capabilities, and this MOSFET can meet these requirements.
4. **Inverter and converter module**: In an inverter or DC power converter, this MOSFET can provide high-voltage DC conversion capabilities to control power flow and ensure efficiency and reliability of power conversion.
1. **Switching power supply module**: This MOSFET has a high drain-source voltage and low on-resistance, suitable for small and medium power DC-DC converters and isolated and non-isolated switching power supplies. Its Trench technology optimizes switching efficiency, making it perform well in high-frequency switching applications.
2. **LED drive circuit**: IRFM220BTF-VB can be used in LED drive circuits, especially in applications that require high voltage tolerance and low power loss, to ensure stable current control and efficient power conversion.
3. **Industrial control system**: This device can be used in industrial control systems that require high voltage tolerance and reliability, such as motor drive and relay control. Such applications require high voltage and high frequency switching capabilities, and this MOSFET can meet these requirements.
4. **Inverter and converter module**: In an inverter or DC power converter, this MOSFET can provide high-voltage DC conversion capabilities to control power flow and ensure efficiency and reliability of power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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