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IRFM214B-VB Product details
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IRFM214B-VB MOSFET Product Introduction:
IRFM214B-VB is a single N-channel enhancement mode MOSFET in SOT223 package. It is manufactured using advanced trench technology and has a high breakdown voltage and low leakage current. It supports drain-source voltage (VDS) up to 250V and gate-source voltage (VGS) of ±20V, making it suitable for applications that require high voltage resistance. The device has a threshold voltage of 3V, an on-resistance (RDS(ON)) of 2000mΩ@VGS=10V, and a maximum drain current (ID) of 0.79A, making it suitable for low-power, high-efficiency circuits.
IRFM214B-VB is a single N-channel enhancement mode MOSFET in SOT223 package. It is manufactured using advanced trench technology and has a high breakdown voltage and low leakage current. It supports drain-source voltage (VDS) up to 250V and gate-source voltage (VGS) of ±20V, making it suitable for applications that require high voltage resistance. The device has a threshold voltage of 3V, an on-resistance (RDS(ON)) of 2000mΩ@VGS=10V, and a maximum drain current (ID) of 0.79A, making it suitable for low-power, high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
IRFM214B-VB Detailed parameter description:
- **Model**: IRFM214B-VB
- **Package**: SOT223
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ@VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
- **Model**: IRFM214B-VB
- **Package**: SOT223
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ@VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Technology**: Trench technology
- **Operating temperature range**: Typically between -55°C and +150°C
Domain and module applications：
Applications and modules:
1. **Power management modules**: IRFM214B-VB performs well in switching power supplies (SMPS) and power management modules, and is particularly suitable for applications with high voltage but low current, such as protection circuits in battery management systems.
2. **Lighting systems**: Due to its high voltage characteristics, the device is also suitable for LED driver circuits to achieve higher power efficiency while reducing energy consumption, especially in areas such as LED lamps or street lights.
3. **Small motor drive control**: Due to its ability to withstand higher voltages and have suitable drain currents, IRFM214B-VB is also commonly used in low-power DC motor or servo motor control modules.
4. **Smart home devices**: In the low-power circuits of smart homes, especially modules that require high voltage resistance and low power consumption, such as smart sockets, sensor power conversion and other modules.
These characteristics make IRFM214B-VB suitable for small devices and modules that need to operate at high voltages and have low power consumption.
1. **Power management modules**: IRFM214B-VB performs well in switching power supplies (SMPS) and power management modules, and is particularly suitable for applications with high voltage but low current, such as protection circuits in battery management systems.
2. **Lighting systems**: Due to its high voltage characteristics, the device is also suitable for LED driver circuits to achieve higher power efficiency while reducing energy consumption, especially in areas such as LED lamps or street lights.
3. **Small motor drive control**: Due to its ability to withstand higher voltages and have suitable drain currents, IRFM214B-VB is also commonly used in low-power DC motor or servo motor control modules.
4. **Smart home devices**: In the low-power circuits of smart homes, especially modules that require high voltage resistance and low power consumption, such as smart sockets, sensor power conversion and other modules.
These characteristics make IRFM214B-VB suitable for small devices and modules that need to operate at high voltages and have low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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