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IRFM214A-VB Product details
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1. IRFM214A-VB Product Introduction
IRFM214A-VB is a single N-channel MOSFET in SOT223 package with 250V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), suitable for high voltage and low current applications. It has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 2000mΩ at a gate drive voltage of 10V, and a maximum drain current of 0.79A. The device uses trench technology, has good switching performance and withstand voltage characteristics, and is suitable for low-power control circuits that require high voltage isolation.
IRFM214A-VB is a single N-channel MOSFET in SOT223 package with 250V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), suitable for high voltage and low current applications. It has a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 2000mΩ at a gate drive voltage of 10V, and a maximum drain current of 0.79A. The device uses trench technology, has good switching performance and withstand voltage characteristics, and is suitable for low-power control circuits that require high voltage isolation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. IRFM214A-VB Detailed parameter description
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Technology type**: Trench technology
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.79A
- **Technology type**: Trench technology
Domain and module applications：
III. Application Fields and Module Description
IRFM214A-VB is suitable for circuit modules that require high voltage handling but low current demand. The following are examples of its application fields:
1. **LED drive circuit**: IRFM214A-VB can be used in low-power LED drive modules, especially when higher voltage input is required, to ensure the stability and efficiency of LED lighting.
2. **High-voltage signal isolation module**: In industrial control systems or automation equipment, this MOSFET can be used in signal isolation modules to ensure isolation and safety between high-voltage lines and low-voltage control circuits.
3. **Secondary rectifier in switching power supply (SMPS)**: Due to its high voltage withstand capability, IRFM214A-VB can be used in the secondary rectification part of low-power switching power supplies, helping to provide reliable voltage conversion.
4. **Low-power circuits for home appliances**: In home appliances such as motor control or sensor systems, this MOSFET can be used for high-voltage control applications to reduce power consumption and improve circuit stability.
These examples illustrate the wide applicability of the IRFM214A-VB in low-power high-voltage applications, especially in the field of power conversion and control.
IRFM214A-VB is suitable for circuit modules that require high voltage handling but low current demand. The following are examples of its application fields:
1. **LED drive circuit**: IRFM214A-VB can be used in low-power LED drive modules, especially when higher voltage input is required, to ensure the stability and efficiency of LED lighting.
2. **High-voltage signal isolation module**: In industrial control systems or automation equipment, this MOSFET can be used in signal isolation modules to ensure isolation and safety between high-voltage lines and low-voltage control circuits.
3. **Secondary rectifier in switching power supply (SMPS)**: Due to its high voltage withstand capability, IRFM214A-VB can be used in the secondary rectification part of low-power switching power supplies, helping to provide reliable voltage conversion.
4. **Low-power circuits for home appliances**: In home appliances such as motor control or sensor systems, this MOSFET can be used for high-voltage control applications to reduce power consumption and improve circuit stability.
These examples illustrate the wide applicability of the IRFM214A-VB in low-power high-voltage applications, especially in the field of power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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