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IRFM014A-VB Product details
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IRFM014A-VB Product Introduction
IRFM014A-VB is a single-channel N-channel MOSFET in a SOT223 package. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) rating of ±20V. Its on-resistance (RDS(ON)) is low, at 85mΩ (at VGS=4.5V) and 76mΩ (at VGS=10V), respectively, and can support a continuous drain current of up to 4.5A. This MOSFET uses advanced trench technology and has excellent conduction performance and power handling capabilities, making it ideal for medium and low voltage power conversion applications.
IRFM014A-VB is a single-channel N-channel MOSFET in a SOT223 package. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) rating of ±20V. Its on-resistance (RDS(ON)) is low, at 85mΩ (at VGS=4.5V) and 76mΩ (at VGS=10V), respectively, and can support a continuous drain current of up to 4.5A. This MOSFET uses advanced trench technology and has excellent conduction performance and power handling capabilities, making it ideal for medium and low voltage power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
IRFM014A-VB Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ (VGS=4.5V)
- 76mΩ (VGS=10V)
- **Continuous drain current (ID)**: 4.5A
- **Technology**: Trench
- **Maximum power consumption**: Depending on different working conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
- **Package type**: SOT223
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ (VGS=4.5V)
- 76mΩ (VGS=10V)
- **Continuous drain current (ID)**: 4.5A
- **Technology**: Trench
- **Maximum power consumption**: Depending on different working conditions and heat dissipation design, power consumption is limited by packaging and thermal management.
Domain and module applications：
Applicable fields and modules
IRFM014A-VB MOSFET is suitable for various fields that require high-efficiency power conversion and switching control. Typical applications include:
1. **Power management module**: In DC-DC converters, IRFM014A-VB can be used in low-power switching power supply circuits, especially in high-efficiency power management. Its low RDS(ON) characteristics help reduce power loss and improve overall system efficiency.
2. **Battery Management System (BMS)**: This MOSFET is very suitable for use in the protection circuit of lithium battery packs, responsible for controlling the switching operation of the charging and discharging paths. The 60V withstand voltage and low on-resistance ensure its efficient operation in medium-voltage applications.
3. **LED driver circuit**: IRFM014A-VB can be used in the switching circuit of driving LEDs. The low on-resistance and trench technology ensure high efficiency of current control and heat management.
4. **Power tools**: Its high current carrying capacity and withstand voltage characteristics make IRFM014A-VB suitable for motor drive modules of medium and low voltage power tools.
5. **Automotive electronics**: In automotive applications, it can be used to control on-board power and loads, such as lighting control and electric motor drive, with anti-interference ability and stable switching performance.
IRFM014A-VB MOSFET is suitable for various fields that require high-efficiency power conversion and switching control. Typical applications include:
1. **Power management module**: In DC-DC converters, IRFM014A-VB can be used in low-power switching power supply circuits, especially in high-efficiency power management. Its low RDS(ON) characteristics help reduce power loss and improve overall system efficiency.
2. **Battery Management System (BMS)**: This MOSFET is very suitable for use in the protection circuit of lithium battery packs, responsible for controlling the switching operation of the charging and discharging paths. The 60V withstand voltage and low on-resistance ensure its efficient operation in medium-voltage applications.
3. **LED driver circuit**: IRFM014A-VB can be used in the switching circuit of driving LEDs. The low on-resistance and trench technology ensure high efficiency of current control and heat management.
4. **Power tools**: Its high current carrying capacity and withstand voltage characteristics make IRFM014A-VB suitable for motor drive modules of medium and low voltage power tools.
5. **Automotive electronics**: In automotive applications, it can be used to control on-board power and loads, such as lighting control and electric motor drive, with anti-interference ability and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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