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IRFL4315TRPBF-VB Product details
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IRFL4315TRPBF-VB MOSFET Product Introduction:
**IRFL4315TRPBF-VB** is a single N-channel MOSFET in **SOT223** package, suitable for medium voltage applications. Its drain-source voltage (VDS) can reach 150V, the gate-source voltage (VGS) tolerance is ±20V, and the threshold voltage is 2.5V. This device uses **Trench** technology, with an on-state resistance of 283mΩ (VGS = 10V) and a maximum drain current of 3A. It is suitable for power management and switching applications that require high voltage isolation and higher efficiency.
**IRFL4315TRPBF-VB** is a single N-channel MOSFET in **SOT223** package, suitable for medium voltage applications. Its drain-source voltage (VDS) can reach 150V, the gate-source voltage (VGS) tolerance is ±20V, and the threshold voltage is 2.5V. This device uses **Trench** technology, with an on-state resistance of 283mΩ (VGS = 10V) and a maximum drain current of 3A. It is suitable for power management and switching applications that require high voltage isolation and higher efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | 283mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 150V | 2.5V | 3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description:
- **Package**: SOT223
SOT223 is a surface mount package that provides good heat dissipation and compact size, suitable for medium power applications.
- **Configuration**: Single N-channel
N-channel MOSFETs are commonly used for switching and current control, suitable for positive voltage control signals.
- **Drain-source voltage (VDS)**: 150V
Supports a maximum drain-source voltage of 150V, suitable for higher voltage applications such as power conversion and switching circuits.
- **Gate-source voltage (VGS)**: ±20V
The tolerance of the gate-source voltage is ±20V, which can adapt to different gate control signals.
- **Threshold voltage (Vth)**: 2.5V
The threshold voltage of this MOSFET is 2.5V, ensuring stable switching at lower gate voltages, suitable for low-power control circuits.
- **On-state resistance (RDS(ON))**:
- 283mΩ @ VGS = 10V
Lower on-state resistance can reduce conduction losses and improve circuit efficiency.
- **Drain current (ID)**: 3A
The maximum drain current is 3A, which can handle moderate load current and is suitable for medium power applications.
- **Technology**: Trench
The use of Trench technology provides higher switching speeds and lower on-state resistance, which helps improve power efficiency and reduce losses.
- **Package**: SOT223
SOT223 is a surface mount package that provides good heat dissipation and compact size, suitable for medium power applications.
- **Configuration**: Single N-channel
N-channel MOSFETs are commonly used for switching and current control, suitable for positive voltage control signals.
- **Drain-source voltage (VDS)**: 150V
Supports a maximum drain-source voltage of 150V, suitable for higher voltage applications such as power conversion and switching circuits.
- **Gate-source voltage (VGS)**: ±20V
The tolerance of the gate-source voltage is ±20V, which can adapt to different gate control signals.
- **Threshold voltage (Vth)**: 2.5V
The threshold voltage of this MOSFET is 2.5V, ensuring stable switching at lower gate voltages, suitable for low-power control circuits.
- **On-state resistance (RDS(ON))**:
- 283mΩ @ VGS = 10V
Lower on-state resistance can reduce conduction losses and improve circuit efficiency.
- **Drain current (ID)**: 3A
The maximum drain current is 3A, which can handle moderate load current and is suitable for medium power applications.
- **Technology**: Trench
The use of Trench technology provides higher switching speeds and lower on-state resistance, which helps improve power efficiency and reduce losses.
Domain and module applications：
Applications and module examples:
1. **Power Conversion Modules**:
**IRFL4315TRPBF-VB** is suitable for use in power conversion applications, especially in DC power converters and step-up/step-down converters. Its high voltage capability (150V) allows it to withstand higher input voltages. Low on-resistance (283mΩ) can effectively reduce losses and improve conversion efficiency.
2. **Switching Power Supplies**:
In switching power supply applications, **IRFL4315TRPBF-VB** can be used as an efficient switching element to drive medium current loads. Its 150V withstand voltage makes it superior in higher voltage industrial and communication power modules, and can handle a wide range of voltage inputs.
3. **Lighting Drivers**:
This MOSFET can be used in LED lighting drivers, especially for high voltage constant current drive circuits. Its low conduction loss and high current handling capability provide an efficient and stable solution for LED driving.
4. **Motor Control Modules**:
**IRFL4315TRPBF-VB** is suitable as a switching element in low-power motor drive applications to control small DC motors. Its high voltage capability and medium current handling capability make it suitable for use in motor drive control and feedback systems.
5. **Industrial Control Systems**:
In the field of industrial control, this MOSFET is suitable for high-voltage control and load switching. It can handle higher voltage changes and is suitable for control modules in industrial automation equipment.
**IRFL4315TRPBF-VB**'s high voltage characteristics and medium current handling capability make it an ideal choice for power conversion, switching power supplies, lighting drives, and low-power motor control.
1. **Power Conversion Modules**:
**IRFL4315TRPBF-VB** is suitable for use in power conversion applications, especially in DC power converters and step-up/step-down converters. Its high voltage capability (150V) allows it to withstand higher input voltages. Low on-resistance (283mΩ) can effectively reduce losses and improve conversion efficiency.
2. **Switching Power Supplies**:
In switching power supply applications, **IRFL4315TRPBF-VB** can be used as an efficient switching element to drive medium current loads. Its 150V withstand voltage makes it superior in higher voltage industrial and communication power modules, and can handle a wide range of voltage inputs.
3. **Lighting Drivers**:
This MOSFET can be used in LED lighting drivers, especially for high voltage constant current drive circuits. Its low conduction loss and high current handling capability provide an efficient and stable solution for LED driving.
4. **Motor Control Modules**:
**IRFL4315TRPBF-VB** is suitable as a switching element in low-power motor drive applications to control small DC motors. Its high voltage capability and medium current handling capability make it suitable for use in motor drive control and feedback systems.
5. **Industrial Control Systems**:
In the field of industrial control, this MOSFET is suitable for high-voltage control and load switching. It can handle higher voltage changes and is suitable for control modules in industrial automation equipment.
**IRFL4315TRPBF-VB**'s high voltage characteristics and medium current handling capability make it an ideal choice for power conversion, switching power supplies, lighting drives, and low-power motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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