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IRFL110TR-VB Product details
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IRFL110TR-VB Product Introduction
IRFL110TR-VB is a single N-channel power MOSFET, packaged in **SOT223**, manufactured based on **Trench** technology. This model has good switching performance and high voltage resistance, can withstand **100V** drain-source voltage (VDS), and provide **120mΩ** and **100mΩ** low on-resistance at **4.5V** and **10V** gate-source voltage (VGS), respectively. IRFL110TR-VB can provide a maximum drain current (ID) of **5A**, suitable for a variety of low-power and medium-voltage switching applications, and performs well in circuits with limited space.
IRFL110TR-VB is a single N-channel power MOSFET, packaged in **SOT223**, manufactured based on **Trench** technology. This model has good switching performance and high voltage resistance, can withstand **100V** drain-source voltage (VDS), and provide **120mΩ** and **100mΩ** low on-resistance at **4.5V** and **10V** gate-source voltage (VGS), respectively. IRFL110TR-VB can provide a maximum drain current (ID) of **5A**, suitable for a variety of low-power and medium-voltage switching applications, and performs well in circuits with limited space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
1. **Package**: SOT223
The SOT223 package provides compact size and good heat dissipation, suitable for circuit designs with limited space.
2. **Configuration**: Single N-channel
The single N-channel configuration is a common power MOSFET structure suitable for high-efficiency switching and control applications.
3. **Drain-Source Voltage (VDS)**: 100V
Able to handle drain-source voltages up to 100V, it is ideal for medium voltage applications such as DC motor drives and switching power supplies.
4. **Gate-Source Voltage (VGS)**: ±20V
The IRFL110TR-VB can operate in a gate-source voltage range of ±20V, providing a wide range of drive voltage adaptability.
5. **Threshold Voltage (Vth)**: 1.8V
The lower threshold voltage allows the MOSFET to turn on at a lower gate-source voltage, thereby improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **120mΩ @ VGS=4.5V**
- **100mΩ @ VGS=10V**
Low on-resistance can effectively reduce switching losses and improve system efficiency, especially in higher current applications.
7. **Maximum Drain Current (ID)**: 5A
The MOSFET can handle a drain current of up to 5A, suitable for low power to medium current loads.
8. **Technology**: Trench
Trench technology provides low on-resistance and efficient switching performance, and is the mainstream technology for current high-efficiency MOSFET design.
1. **Package**: SOT223
The SOT223 package provides compact size and good heat dissipation, suitable for circuit designs with limited space.
2. **Configuration**: Single N-channel
The single N-channel configuration is a common power MOSFET structure suitable for high-efficiency switching and control applications.
3. **Drain-Source Voltage (VDS)**: 100V
Able to handle drain-source voltages up to 100V, it is ideal for medium voltage applications such as DC motor drives and switching power supplies.
4. **Gate-Source Voltage (VGS)**: ±20V
The IRFL110TR-VB can operate in a gate-source voltage range of ±20V, providing a wide range of drive voltage adaptability.
5. **Threshold Voltage (Vth)**: 1.8V
The lower threshold voltage allows the MOSFET to turn on at a lower gate-source voltage, thereby improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **120mΩ @ VGS=4.5V**
- **100mΩ @ VGS=10V**
Low on-resistance can effectively reduce switching losses and improve system efficiency, especially in higher current applications.
7. **Maximum Drain Current (ID)**: 5A
The MOSFET can handle a drain current of up to 5A, suitable for low power to medium current loads.
8. **Technology**: Trench
Trench technology provides low on-resistance and efficient switching performance, and is the mainstream technology for current high-efficiency MOSFET design.
Domain and module applications：
Applications and module examples
1. **Motor drive**
IRFL110TR-VB can be used in **small DC motor drive circuits**, especially in scenarios where higher voltage drive is required. Its 100V withstand voltage and low on-resistance ensure the stability and high efficiency of the drive circuit when the load changes.
2. **DC-DC converter**
In **DC-DC converter**, IRFL110TR-VB can be used as an efficient switching element to help achieve voltage conversion and voltage regulation functions. Its low on-resistance and fast switching characteristics play a significant role in improving conversion efficiency.
3. **Power management module**
This MOSFET is suitable for use as a load switch in **power management modules**, especially in situations where medium voltage and efficient switching control are required, to ensure the stability and reliability of the power system.
4. **Switching Power Supply (SMPS)**
In **switching power supply modules**, IRFL110TR-VB can be used as a switching element on the primary and secondary sides, especially in applications that require efficient switching and reduced losses. Its 100V withstand voltage is very suitable for these applications.
5. **Lighting Circuit Control**
This MOSFET is suitable for the control of **LED drive circuit** or **lighting circuit**, which can effectively control the current, maintain the stable operation of lighting equipment, and reduce power loss.
IRFL110TR-VB is widely used in many fields such as motor drive, power management, DC-DC converters, switching power supplies, and lighting circuits with its high efficiency, compact package and good switching performance.
1. **Motor drive**
IRFL110TR-VB can be used in **small DC motor drive circuits**, especially in scenarios where higher voltage drive is required. Its 100V withstand voltage and low on-resistance ensure the stability and high efficiency of the drive circuit when the load changes.
2. **DC-DC converter**
In **DC-DC converter**, IRFL110TR-VB can be used as an efficient switching element to help achieve voltage conversion and voltage regulation functions. Its low on-resistance and fast switching characteristics play a significant role in improving conversion efficiency.
3. **Power management module**
This MOSFET is suitable for use as a load switch in **power management modules**, especially in situations where medium voltage and efficient switching control are required, to ensure the stability and reliability of the power system.
4. **Switching Power Supply (SMPS)**
In **switching power supply modules**, IRFL110TR-VB can be used as a switching element on the primary and secondary sides, especially in applications that require efficient switching and reduced losses. Its 100V withstand voltage is very suitable for these applications.
5. **Lighting Circuit Control**
This MOSFET is suitable for the control of **LED drive circuit** or **lighting circuit**, which can effectively control the current, maintain the stable operation of lighting equipment, and reduce power loss.
IRFL110TR-VB is widely used in many fields such as motor drive, power management, DC-DC converters, switching power supplies, and lighting circuits with its high efficiency, compact package and good switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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