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IRFL1006NTRPBF-VB Product details

Product introduction:

Product Introduction: IRFL1006NTRPBF-VB

IRFL1006NTRPBF-VB is an N-channel MOSFET in SOT223 package, with 60V drain-source voltage (VDS) and 4.5A maximum drain current (ID), and is manufactured using advanced Trench technology. With its low on-resistance and high current handling capability, this MOSFET can provide efficient current control and switching performance in miniaturized and low-power designs, and is particularly suitable for power management, switching circuits and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 60V 1.7V 4.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 60V 1.7V 4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
Detailed parameter description:

1. **Package type**: SOT223
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 4.5A
8. **Maximum pulsed drain current**: Depends on specific application conditions
9. **Maximum power dissipation**: Depends on heat dissipation conditions and ambient temperature
10. **Technology**: Trench technology
11. **Total gate charge (Qg)**: affects switching speed
12. **Input capacitance (Ciss)**: affects switching characteristics
13. **Operating temperature range**: -55°C to 175°C

Domain and module applications:

Application fields and module examples:

1. **Power management**
IRFL1006NTRPBF-VB is very suitable for use in low-power power management modules, such as power switches in DC-DC converters and switching power supplies. The lower on-resistance of this MOSFET can improve power efficiency and excel in miniaturized circuit design, suitable for applications such as mobile phone chargers and laptop adapters.

2. **Load switch**
Due to its low on-resistance and small package, IRFL1006NTRPBF-VB can play an important role in low-current load switching circuits, especially for low-voltage switching circuits in consumer electronic devices, such as smart home devices and power control modules for remote control appliances.

3. **Battery management system**
In battery-powered devices, IRFL1006NTRPBF-VB can be used as a switching element to manage the battery charging and discharging process. Its Trench technology ensures efficient energy transmission, suitable for portable devices, battery management modules for power tools, and low-power Internet of Things (IoT) devices.

4. **Signal Switching and Small Motor Drive**
Due to its small on-resistance and moderate current capability, the IRFL1006NTRPBF-VB can be used to drive small motors or act as a control element in signal switching circuits. It is suitable for use in application scenarios such as low-power motor drive, toys, and fan control.

5. **Low-power Switching Applications**
The SOT223 package of the IRFL1006NTRPBF-VB makes it very suitable for space-constrained designs, especially in power switches, protection circuits, and low-voltage control modules. Its low on-resistance and efficient switching performance ensure stability and reliability in high-efficiency and low-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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