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IRFL014NTRPBF-VB Product details
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IRFL014NTRPBF-VB MOSFET Product Introduction:
**IRFL014NTRPBF-VB** is a high-performance N-channel MOSFET in **SOT223** package. It has high drain-source voltage tolerance (60V) and current handling capability (4.5A), which is very suitable for high-efficiency switching and load driving applications. The threshold voltage of this MOSFET is 1.7V, ensuring stable operation at lower gate voltages. The on-resistance is 76mΩ at VGS=10V, and the low on-resistance helps reduce power consumption. Using **Trench** technology, IRFL014NTRPBF-VB is suitable for a variety of high-performance power management and switching applications.
**IRFL014NTRPBF-VB** is a high-performance N-channel MOSFET in **SOT223** package. It has high drain-source voltage tolerance (60V) and current handling capability (4.5A), which is very suitable for high-efficiency switching and load driving applications. The threshold voltage of this MOSFET is 1.7V, ensuring stable operation at lower gate voltages. The on-resistance is 76mΩ at VGS=10V, and the low on-resistance helps reduce power consumption. Using **Trench** technology, IRFL014NTRPBF-VB is suitable for a variety of high-performance power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description:
- **Package**: SOT223
The SOT223 package design provides good heat dissipation performance and is suitable for medium power applications.
- **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and current control, and can effectively handle current under positive voltage signals.
- **Drain-source voltage (VDS)**: 60V
Supports drain-source voltage up to 60V, suitable for medium voltage switching and load control applications.
- **Gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltage of ±20V, ensuring stable operation under various control signals.
- **Threshold voltage (Vth)**: 1.7V
The low threshold voltage ensures that it can be turned on at a lower gate voltage, which is helpful for low voltage control applications.
- **On-state resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
Low on-state resistance reduces conduction loss and improves switching efficiency.
- **Drainage current (ID)**: 4.5A
Maximum drain current is 4.5A, suitable for handling medium current loads.
- **Technology**: Trench
Using **Trench** technology, it provides high switching speed and low on-resistance, suitable for high-efficiency switching applications.
- **Package**: SOT223
The SOT223 package design provides good heat dissipation performance and is suitable for medium power applications.
- **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and current control, and can effectively handle current under positive voltage signals.
- **Drain-source voltage (VDS)**: 60V
Supports drain-source voltage up to 60V, suitable for medium voltage switching and load control applications.
- **Gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltage of ±20V, ensuring stable operation under various control signals.
- **Threshold voltage (Vth)**: 1.7V
The low threshold voltage ensures that it can be turned on at a lower gate voltage, which is helpful for low voltage control applications.
- **On-state resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
Low on-state resistance reduces conduction loss and improves switching efficiency.
- **Drainage current (ID)**: 4.5A
Maximum drain current is 4.5A, suitable for handling medium current loads.
- **Technology**: Trench
Using **Trench** technology, it provides high switching speed and low on-resistance, suitable for high-efficiency switching applications.
Domain and module applications：
Applications and module examples:
1. **Power Switching**:
**IRFL014NTRPBF-VB** can be used in a variety of power switching applications, including DC-DC converters and power management modules. Its low on-resistance (76mΩ) and high current handling capability (4.5A) enable it to efficiently transfer current and reduce switching losses in power switches.
2. **Load Switching**:
In load switching applications, such as switching power supplies and load control circuits, **IRFL014NTRPBF-VB** can effectively control load current. Its threshold voltage of 1.7V is suitable for low-voltage load control and can operate stably at low gate voltages.
3. **Motor Driving**:
This MOSFET can be used as a switching element in motor drive circuits and is suitable for motor controllers with medium current and voltage. Its high current handling capability and low on-resistance make it an excellent performer in motor drive applications.
4. **Power Amplifiers**:
In power amplifier designs, the **IRFL014NTRPBF-VB** can be used as a key component for switch and load control. The low on-resistance and high current handling capability make it suitable for high-performance power amplifier circuits, improving overall efficiency and reliability.
5. **Power Management Systems**:
In power management systems, such as battery management systems and power regulation circuits, the **IRFL014NTRPBF-VB** can be used as an efficient switching element. Its low on-resistance (76mΩ) and high current handling capability (4.5A) are suitable for efficient power management, improving system stability and efficiency.
**IRFL014NTRPBF-VB** is a superior MOSFET solution with its low on-resistance and high current handling capability, suitable for a variety of applications such as power switches, load switches, motor drives and power amplifiers.
1. **Power Switching**:
**IRFL014NTRPBF-VB** can be used in a variety of power switching applications, including DC-DC converters and power management modules. Its low on-resistance (76mΩ) and high current handling capability (4.5A) enable it to efficiently transfer current and reduce switching losses in power switches.
2. **Load Switching**:
In load switching applications, such as switching power supplies and load control circuits, **IRFL014NTRPBF-VB** can effectively control load current. Its threshold voltage of 1.7V is suitable for low-voltage load control and can operate stably at low gate voltages.
3. **Motor Driving**:
This MOSFET can be used as a switching element in motor drive circuits and is suitable for motor controllers with medium current and voltage. Its high current handling capability and low on-resistance make it an excellent performer in motor drive applications.
4. **Power Amplifiers**:
In power amplifier designs, the **IRFL014NTRPBF-VB** can be used as a key component for switch and load control. The low on-resistance and high current handling capability make it suitable for high-performance power amplifier circuits, improving overall efficiency and reliability.
5. **Power Management Systems**:
In power management systems, such as battery management systems and power regulation circuits, the **IRFL014NTRPBF-VB** can be used as an efficient switching element. Its low on-resistance (76mΩ) and high current handling capability (4.5A) are suitable for efficient power management, improving system stability and efficiency.
**IRFL014NTRPBF-VB** is a superior MOSFET solution with its low on-resistance and high current handling capability, suitable for a variety of applications such as power switches, load switches, motor drives and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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