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IRFIZ48VPBF-VB Product details
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IRFIZ48VPBF-VB MOSFET Product Introduction
IRFIZ48VPBF-VB is a single N-channel MOSFET in TO220F package. It is designed to handle medium to high voltage and high current applications, manufactured using Trench technology, with low on-resistance and high current handling capability. Its high efficiency switching characteristics and low on-resistance make it excellent in various power management and switching applications.
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IRFIZ48VPBF-VB is a single N-channel MOSFET in TO220F package. It is designed to handle medium to high voltage and high current applications, manufactured using Trench technology, with low on-resistance and high current handling capability. Its high efficiency switching characteristics and low on-resistance make it excellent in various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F, with good heat dissipation performance and suitable for medium power applications.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 60V, suitable for medium voltage loads.
- **VGS (gate-source voltage)**: ±20V, supporting a wider gate drive voltage range.
- **Vth (threshold voltage)**: 2.5V, ensuring that the MOSFET can be stably turned on even at low gate voltage.
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **ID (continuous leakage current)**: 70A, capable of handling larger current loads.
- **Technology**: Trench technology, providing low on-resistance and efficient switching performance.
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- **Package**: TO220F, with good heat dissipation performance and suitable for medium power applications.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 60V, suitable for medium voltage loads.
- **VGS (gate-source voltage)**: ±20V, supporting a wider gate drive voltage range.
- **Vth (threshold voltage)**: 2.5V, ensuring that the MOSFET can be stably turned on even at low gate voltage.
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **ID (continuous leakage current)**: 70A, capable of handling larger current loads.
- **Technology**: Trench technology, providing low on-resistance and efficient switching performance.
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Domain and module applications：
Application Examples
1. **High Efficiency Power Management**:
In **High Efficiency Power Management** systems, the IRFIZ48VPBF-VB is used as a switching element. Its low on-resistance and high current handling capability help reduce energy losses and improve the overall efficiency of the system. This MOSFET is ideal for use in switch mode power supplies (SMPS) and DC-DC converters.
2. **Electric Vehicle Drive**:
In **Electric Vehicle Drive** systems, the IRFIZ48VPBF-VB can be used as a switching element in motor control. Its high current carrying capability and low on-resistance ensure efficient and reliable operation of electric vehicles.
3. **Power Amplifier**:
In **Power Amplifier**, MOSFETs are used to handle high power signals. Its high current handling capability and low on-resistance improve the efficiency and performance of the amplifier, and are suitable for applications such as audio amplifiers and RF amplifiers.
4. **Battery Management System**:
In **Battery Management System**, IRFIZ48VPBF-VB can be used for battery protection and cell balancing control. Its low on-resistance helps reduce energy loss and ensures that the battery operates within a safe range.
5. **LED Driver**:
In **LED Driver** applications, this MOSFET can be used as a switching element to adjust the brightness of the LED and improve power efficiency. Its high current capability and low on-resistance are critical to the stability and efficiency of the LED drive circuit.
IRFIZ48VPBF-VB is widely used in many fields such as high-efficiency power management, electric vehicle drive, power amplifier, battery management system and LED driver due to its excellent current handling capability, low on-resistance and efficient switching performance.
1. **High Efficiency Power Management**:
In **High Efficiency Power Management** systems, the IRFIZ48VPBF-VB is used as a switching element. Its low on-resistance and high current handling capability help reduce energy losses and improve the overall efficiency of the system. This MOSFET is ideal for use in switch mode power supplies (SMPS) and DC-DC converters.
2. **Electric Vehicle Drive**:
In **Electric Vehicle Drive** systems, the IRFIZ48VPBF-VB can be used as a switching element in motor control. Its high current carrying capability and low on-resistance ensure efficient and reliable operation of electric vehicles.
3. **Power Amplifier**:
In **Power Amplifier**, MOSFETs are used to handle high power signals. Its high current handling capability and low on-resistance improve the efficiency and performance of the amplifier, and are suitable for applications such as audio amplifiers and RF amplifiers.
4. **Battery Management System**:
In **Battery Management System**, IRFIZ48VPBF-VB can be used for battery protection and cell balancing control. Its low on-resistance helps reduce energy loss and ensures that the battery operates within a safe range.
5. **LED Driver**:
In **LED Driver** applications, this MOSFET can be used as a switching element to adjust the brightness of the LED and improve power efficiency. Its high current capability and low on-resistance are critical to the stability and efficiency of the LED drive circuit.
IRFIZ48VPBF-VB is widely used in many fields such as high-efficiency power management, electric vehicle drive, power amplifier, battery management system and LED driver due to its excellent current handling capability, low on-resistance and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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