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IRFIZ48GPBF-VB Product details
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Product Introduction
**IRFIZ48GPBF-VB** is a high-performance N-channel MOSFET in TO220F package. It is based on Trench technology, has high conductivity and low on-resistance, and is suitable for a variety of high-power and high-efficiency applications. With a drain-source voltage tolerance of up to 60V and a maximum drain current of 70A, this MOSFET is very suitable for applications that require high switching frequency and low conduction loss.
**IRFIZ48GPBF-VB** is a high-performance N-channel MOSFET in TO220F package. It is based on Trench technology, has high conductivity and low on-resistance, and is suitable for a variety of high-power and high-efficiency applications. With a drain-source voltage tolerance of up to 60V and a maximum drain current of 70A, this MOSFET is very suitable for applications that require high switching frequency and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules:
**IRFIZ48GPBF-VB** is suitable for the following fields and modules:
1. **Power Management**:
Due to its low on-resistance and high current handling capability, IRFIZ48GPBF-VB excels in power management systems. It can be used in DC-DC converters, voltage regulators, and high-efficiency power switches to provide stable switching performance and low power loss, thereby improving the efficiency of the overall system.
2. **Motor Drives**:
In motor drive applications, the high current carrying capacity of this MOSFET makes it suitable for use in motor control circuits. It can provide fast response and high-efficiency motor drives, especially for motor control systems that require high switching frequencies and low power consumption.
3. **Switching Power Supplies**:
In high-frequency switching power supply applications, the low on-resistance of IRFIZ48GPBF-VB can reduce switching losses and improve power conversion efficiency. It is suitable for high-frequency switching operations in AC-DC and DC-DC converters.
4. **LED Drivers**:
For LED driver applications, this MOSFET provides stable current control and efficient switching performance, especially in high-current LED driver modules. Its high current handling capability and low on-resistance help improve the brightness and life of LEDs.
5. **Power Converters**:
IRFIZ48GPBF-VB is suitable for a variety of power converters, including inverters and chargers. Its low on-resistance and high current capability can effectively improve the efficiency and reliability of power converters.
**IRFIZ48GPBF-VB**'s high current carrying capability and low on-resistance make it outstanding in high-efficiency and high-power applications, and can meet various power management, motor drive and power conversion needs.
**IRFIZ48GPBF-VB** is suitable for the following fields and modules:
1. **Power Management**:
Due to its low on-resistance and high current handling capability, IRFIZ48GPBF-VB excels in power management systems. It can be used in DC-DC converters, voltage regulators, and high-efficiency power switches to provide stable switching performance and low power loss, thereby improving the efficiency of the overall system.
2. **Motor Drives**:
In motor drive applications, the high current carrying capacity of this MOSFET makes it suitable for use in motor control circuits. It can provide fast response and high-efficiency motor drives, especially for motor control systems that require high switching frequencies and low power consumption.
3. **Switching Power Supplies**:
In high-frequency switching power supply applications, the low on-resistance of IRFIZ48GPBF-VB can reduce switching losses and improve power conversion efficiency. It is suitable for high-frequency switching operations in AC-DC and DC-DC converters.
4. **LED Drivers**:
For LED driver applications, this MOSFET provides stable current control and efficient switching performance, especially in high-current LED driver modules. Its high current handling capability and low on-resistance help improve the brightness and life of LEDs.
5. **Power Converters**:
IRFIZ48GPBF-VB is suitable for a variety of power converters, including inverters and chargers. Its low on-resistance and high current capability can effectively improve the efficiency and reliability of power converters.
**IRFIZ48GPBF-VB**'s high current carrying capability and low on-resistance make it outstanding in high-efficiency and high-power applications, and can meet various power management, motor drive and power conversion needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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