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IRFIZ46GPBF-VB Product details
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1. IRFIZ46GPBF-VB Product Introduction
IRFIZ46GPBF-VB is a high-performance N-channel power MOSFET in a TO220F package. It is designed for medium to high voltage applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of up to 70A. The gate threshold voltage (Vth) of this MOSFET is 2.5V, ensuring that it can be effectively turned on at a lower gate-source voltage. Manufactured using the Trench process, the IRFIZ46GPBF-VB has a low on-resistance (RDS(ON)), which is 12mΩ and 10mΩ, respectively, depending on the gate-source voltage. These features enable the IRFIZ46GPBF-VB to have excellent performance in a variety of power management and switching applications.
IRFIZ46GPBF-VB is a high-performance N-channel power MOSFET in a TO220F package. It is designed for medium to high voltage applications, with a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of up to 70A. The gate threshold voltage (Vth) of this MOSFET is 2.5V, ensuring that it can be effectively turned on at a lower gate-source voltage. Manufactured using the Trench process, the IRFIZ46GPBF-VB has a low on-resistance (RDS(ON)), which is 12mΩ and 10mΩ, respectively, depending on the gate-source voltage. These features enable the IRFIZ46GPBF-VB to have excellent performance in a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IRFIZ46GPBF-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Process technology**: Trench
- **Maximum power dissipation**: 94W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F The package provides good heat dissipation characteristics
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Process technology**: Trench
- **Maximum power dissipation**: 94W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F The package provides good heat dissipation characteristics
Domain and module applications：
III. Application Fields and Module Description
1. **Power Switch**: IRFIZ46GPBF-VB is ideal for power switch applications due to its low on-resistance and high drain current capability. In power management systems, it can be used to efficiently switch and control power, ensuring the stability and efficiency of the power supply.
2. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used as a main switch or synchronous rectifier. Its low RDS(ON) characteristics help reduce the power loss of the converter and improve conversion efficiency.
3. **Motor Drive**: IRFIZ46GPBF-VB is suitable for motor drive circuits, especially in applications requiring high current and medium voltage. Its high drain current capability and low on-resistance enable it to effectively control motor loads.
4. **High-efficiency Power Module**: In a high-efficiency power module, this MOSFET is able to provide stable switching performance. Its low RDS(ON) reduces power losses and improves overall system efficiency, making it suitable for high-power power supply applications.
5. **Switch Mode Power Supply (SMPS)**: In a switch mode power supply, the IRFIZ46GPBF-VB can be used as the main switching element. Its low on-resistance and high current capability enable it to handle high-power switching operations, providing efficient power conversion.
6. **LED Driver**: In an LED drive circuit, this MOSFET can effectively regulate current to ensure stable brightness and long life of the LED. Its high current carrying capability and low on-resistance help improve drive efficiency.
The high current handling capability and low on-resistance of the IRFIZ46GPBF-VB make it ideal for applications that require efficient switching and current control, especially in power management and high-power applications.
1. **Power Switch**: IRFIZ46GPBF-VB is ideal for power switch applications due to its low on-resistance and high drain current capability. In power management systems, it can be used to efficiently switch and control power, ensuring the stability and efficiency of the power supply.
2. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used as a main switch or synchronous rectifier. Its low RDS(ON) characteristics help reduce the power loss of the converter and improve conversion efficiency.
3. **Motor Drive**: IRFIZ46GPBF-VB is suitable for motor drive circuits, especially in applications requiring high current and medium voltage. Its high drain current capability and low on-resistance enable it to effectively control motor loads.
4. **High-efficiency Power Module**: In a high-efficiency power module, this MOSFET is able to provide stable switching performance. Its low RDS(ON) reduces power losses and improves overall system efficiency, making it suitable for high-power power supply applications.
5. **Switch Mode Power Supply (SMPS)**: In a switch mode power supply, the IRFIZ46GPBF-VB can be used as the main switching element. Its low on-resistance and high current capability enable it to handle high-power switching operations, providing efficient power conversion.
6. **LED Driver**: In an LED drive circuit, this MOSFET can effectively regulate current to ensure stable brightness and long life of the LED. Its high current carrying capability and low on-resistance help improve drive efficiency.
The high current handling capability and low on-resistance of the IRFIZ46GPBF-VB make it ideal for applications that require efficient switching and current control, especially in power management and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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