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IRFIZ34VPBF-VB Product details
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IRFIZ34VPBF-VB Product Introduction
IRFIZ34VPBF-VB is a high-performance single N-channel power MOSFET in a **TO220F** package and manufactured using **Trench** technology. Designed to handle high current and medium voltage applications, this MOSFET can withstand a drain-source voltage (VDS) of **60V** and provide a low on-resistance of **27mΩ** at a gate-source voltage (VGS) of **10V**. The high current carrying capability (ID up to **45A**) and low on-resistance of IRFIZ34VPBF-VB make it excel in high-efficiency switching and current control applications, and is suitable for a variety of high current and high power density electronic devices.
IRFIZ34VPBF-VB is a high-performance single N-channel power MOSFET in a **TO220F** package and manufactured using **Trench** technology. Designed to handle high current and medium voltage applications, this MOSFET can withstand a drain-source voltage (VDS) of **60V** and provide a low on-resistance of **27mΩ** at a gate-source voltage (VGS) of **10V**. The high current carrying capability (ID up to **45A**) and low on-resistance of IRFIZ34VPBF-VB make it excel in high-efficiency switching and current control applications, and is suitable for a variety of high current and high power density electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
The TO220F package provides good heat dissipation and structural strength, making the MOSFET stable in high power and high current applications.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for high current switching and control applications, providing excellent conductivity and stability.
3. **Drain-source voltage (VDS)**: 60V
Able to handle drain-source voltages up to 60V, suitable for medium voltage switching and control applications.
4. **Gate-source voltage (VGS)**: ±20V
The MOSFET can operate at a gate-source voltage of ±20V, providing flexible drive options.
5. **Threshold Voltage (Vth)**: 1.7V
The lower threshold voltage ensures that the MOSFET can turn on quickly at a lower gate-source voltage, thereby improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **27mΩ @ VGS=10V**
Low on-resistance reduces power loss during switching and improves system efficiency.
7. **Maximum Drain Current (ID)**: 45A
Able to handle drain currents up to 45A, suitable for applications requiring high current loads.
8. **Technology**: Trench
Trench technology provides low on-resistance and high-efficiency switching performance, suitable for high current and high power density applications.
1. **Package**: TO220F
The TO220F package provides good heat dissipation and structural strength, making the MOSFET stable in high power and high current applications.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for high current switching and control applications, providing excellent conductivity and stability.
3. **Drain-source voltage (VDS)**: 60V
Able to handle drain-source voltages up to 60V, suitable for medium voltage switching and control applications.
4. **Gate-source voltage (VGS)**: ±20V
The MOSFET can operate at a gate-source voltage of ±20V, providing flexible drive options.
5. **Threshold Voltage (Vth)**: 1.7V
The lower threshold voltage ensures that the MOSFET can turn on quickly at a lower gate-source voltage, thereby improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- **27mΩ @ VGS=10V**
Low on-resistance reduces power loss during switching and improves system efficiency.
7. **Maximum Drain Current (ID)**: 45A
Able to handle drain currents up to 45A, suitable for applications requiring high current loads.
8. **Technology**: Trench
Trench technology provides low on-resistance and high-efficiency switching performance, suitable for high current and high power density applications.
Domain and module applications：
Applications and module examples
1. **Power management system**
IRFIZ34VPBF-VB is used as a high current switch component in **Power management system**. Its high current carrying capability and low on-resistance make it ideal for use in power switches, regulators and voltage regulators, ensuring system stability and efficiency.
2. **Electric vehicle drive system**
In **Electric vehicle drive system**, IRFIZ34VPBF-VB can be used for high current motor drive switches. Its high current handling capability and low on-resistance enable it to provide efficient switching and regulation in the motor control of electric vehicles.
3. **DC-DC converter**
IRFIZ34VPBF-VB is suitable for high current switch modules in **DC-DC converter**. Its low on-resistance and high current capability enable it to effectively handle high current loads in the converter, improving conversion efficiency and stability.
4. **Industrial Power Switch**
In **Industrial Power Switch** applications, IRFIZ34VPBF-VB can be used as a power switch to control the on and off of high-power loads. Its high current capability and low on-resistance ensure stability and efficiency in industrial applications.
5. **Computer Power Module**
In **Computer Power Module**, IRFIZ34VPBF-VB can be used as a high-current switch for power supply. Its low on-resistance and high current handling capability make it suitable for use in computer power modules to ensure stable and efficient power supply operation.
The high current handling capability and low on-resistance of IRFIZ34VPBF-VB make it widely used in power management, electric vehicle drives, DC-DC converters, industrial power switches and computer power modules.
1. **Power management system**
IRFIZ34VPBF-VB is used as a high current switch component in **Power management system**. Its high current carrying capability and low on-resistance make it ideal for use in power switches, regulators and voltage regulators, ensuring system stability and efficiency.
2. **Electric vehicle drive system**
In **Electric vehicle drive system**, IRFIZ34VPBF-VB can be used for high current motor drive switches. Its high current handling capability and low on-resistance enable it to provide efficient switching and regulation in the motor control of electric vehicles.
3. **DC-DC converter**
IRFIZ34VPBF-VB is suitable for high current switch modules in **DC-DC converter**. Its low on-resistance and high current capability enable it to effectively handle high current loads in the converter, improving conversion efficiency and stability.
4. **Industrial Power Switch**
In **Industrial Power Switch** applications, IRFIZ34VPBF-VB can be used as a power switch to control the on and off of high-power loads. Its high current capability and low on-resistance ensure stability and efficiency in industrial applications.
5. **Computer Power Module**
In **Computer Power Module**, IRFIZ34VPBF-VB can be used as a high-current switch for power supply. Its low on-resistance and high current handling capability make it suitable for use in computer power modules to ensure stable and efficient power supply operation.
The high current handling capability and low on-resistance of IRFIZ34VPBF-VB make it widely used in power management, electric vehicle drives, DC-DC converters, industrial power switches and computer power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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