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IRFIZ34EPBF-VB Product details
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IRFIZ34EPBF-VB Product Introduction
**IRFIZ34EPBF-VB** is a unipolar N-channel MOSFET in a **TO220F** package, designed for medium and low voltage applications. This MOSFET has a maximum drain-source voltage of 60V, suitable for handling medium voltage loads. Its threshold voltage is 1.7V and its on-resistance is 27mΩ (VGS = 10V), providing low switching losses and high current carrying capacity. The use of Trench technology makes the IRFIZ34EPBF-VB excel in switching performance and energy efficiency, and is suitable for a variety of medium and low voltage switching and control applications.
**IRFIZ34EPBF-VB** is a unipolar N-channel MOSFET in a **TO220F** package, designed for medium and low voltage applications. This MOSFET has a maximum drain-source voltage of 60V, suitable for handling medium voltage loads. Its threshold voltage is 1.7V and its on-resistance is 27mΩ (VGS = 10V), providing low switching losses and high current carrying capacity. The use of Trench technology makes the IRFIZ34EPBF-VB excel in switching performance and energy efficiency, and is suitable for a variety of medium and low voltage switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IRFIZ34EPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Model**: IRFIZ34EPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power switch**: IRFIZ34EPBF-VB is ideal for use as a medium and low voltage power switch. Due to its low on-resistance and high current carrying capacity, it can provide efficient current control in switching power supplies and power protection circuits, reduce switching losses, and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, IRFIZ34EPBF-VB can provide stable switching performance. Its low on-resistance and high current handling capability make it suitable for motor drive circuits, ensuring high efficiency and reliability of the motor during startup and operation.
3. **DC-DC converter**: This MOSFET is also suitable for DC-DC converter applications. It can handle higher currents during conversion, and its low on-resistance reduces energy losses and improves conversion efficiency. It is widely used in voltage regulation and power modules.
4. **Power Management**: IRFIZ34EPBF-VB performs well in power management systems, especially in power switching and control applications that require medium voltage. It can provide efficient switching control and is suitable for power management circuits, load switches, and other power management modules.
In summary, IRFIZ34EPBF-VB is a high-efficiency, medium-to-low voltage N-channel MOSFET. With its excellent switching performance and low on-resistance, it is widely used in power switching, motor drive, DC-DC converters, power management and other applications.
1. **Power switch**: IRFIZ34EPBF-VB is ideal for use as a medium and low voltage power switch. Due to its low on-resistance and high current carrying capacity, it can provide efficient current control in switching power supplies and power protection circuits, reduce switching losses, and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, IRFIZ34EPBF-VB can provide stable switching performance. Its low on-resistance and high current handling capability make it suitable for motor drive circuits, ensuring high efficiency and reliability of the motor during startup and operation.
3. **DC-DC converter**: This MOSFET is also suitable for DC-DC converter applications. It can handle higher currents during conversion, and its low on-resistance reduces energy losses and improves conversion efficiency. It is widely used in voltage regulation and power modules.
4. **Power Management**: IRFIZ34EPBF-VB performs well in power management systems, especially in power switching and control applications that require medium voltage. It can provide efficient switching control and is suitable for power management circuits, load switches, and other power management modules.
In summary, IRFIZ34EPBF-VB is a high-efficiency, medium-to-low voltage N-channel MOSFET. With its excellent switching performance and low on-resistance, it is widely used in power switching, motor drive, DC-DC converters, power management and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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