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IRFIZ24GPBF-VB Product details
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Product Introduction: IRFIZ24GPBF-VB
IRFIZ24GPBF-VB is a high-performance N-channel MOSFET in TO220F package, designed for applications requiring low on-resistance and high current handling capability. The MOSFET has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 45A. Manufactured using Trench technology, IRFIZ24GPBF-VB provides high switching speed and low on-resistance, suitable for high-efficiency power switching and current control applications.
IRFIZ24GPBF-VB is a high-performance N-channel MOSFET in TO220F package, designed for applications requiring low on-resistance and high current handling capability. The MOSFET has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 45A. Manufactured using Trench technology, IRFIZ24GPBF-VB provides high switching speed and low on-resistance, suitable for high-efficiency power switching and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package type**: TO220F
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 45A
8. **Pulsed drain current**: Depends on specific application conditions
9. **Technology**: Trench technology
10. **Maximum power dissipation**: Depends on heat dissipation conditions and ambient temperature
11. **Operating temperature range**: -55°C to 175°C
12. **Total gate charge (Qg)**: affects switching speed
13. **Input capacitance (Ciss)**: affects switching characteristics
1. **Package type**: TO220F
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 45A
8. **Pulsed drain current**: Depends on specific application conditions
9. **Technology**: Trench technology
10. **Maximum power dissipation**: Depends on heat dissipation conditions and ambient temperature
11. **Operating temperature range**: -55°C to 175°C
12. **Total gate charge (Qg)**: affects switching speed
13. **Input capacitance (Ciss)**: affects switching characteristics
Domain and module applications：
Application fields and module examples:
1. **Power management**
The low on-resistance and high current capability of IRFIZ24GPBF-VB make it ideal for power management applications. It can effectively control the flow of current in power switches, DC-DC converters, and power protection circuits. In these applications, its efficient switching performance helps improve system efficiency and reduce power losses. For example, in computer power supplies and high-efficiency LED driver power supplies, this MOSFET can be used as the main switching element.
2. **Motor drive**
In motor drive systems, the high current handling capability of IRFIZ24GPBF-VB makes it suitable as a motor drive switching element. It can stably control the starting and running of the motor, especially in applications that require high power and high efficiency. For example, in power tools and electric vehicles, this MOSFET can be used to control the speed and torque of the motor.
3. **High power switch**
Due to its low on-resistance, IRFIZ24GPBF-VB is very suitable for high power switching applications. In these applications, it can efficiently switch high current loads, such as in power converters and switching power supplies. It can also be used for the control of high power loads, such as in industrial equipment and power control systems as the main switching element.
4. **Automotive Electronics**
In automotive electronic systems, the IRFIZ24GPBF-VB can be used for high power load switching and power management modules. Its high current handling capability and low on-resistance make it suitable for power converters, battery management systems, and motor control modules in automobiles. For example, in electric vehicle charging systems and automotive power seat controls, this MOSFET ensures efficient and reliable current switching.
5. **Chargers and Adapters**
The low on-resistance and high current capability of the IRFIZ24GPBF-VB make it an ideal choice for chargers and adapters. In these devices, it can provide efficient current control and switching functions, improve device performance and reduce energy loss. For example, in fast chargers and laptop adapters, this MOSFET can be used for efficient current switching and protection.
The low on-resistance and high current capability of the IRFIZ24GPBF-VB enable it to excel in multiple high-performance power management and switching applications. Its efficient Trench technology design ensures reliable switching performance and low power loss.
1. **Power management**
The low on-resistance and high current capability of IRFIZ24GPBF-VB make it ideal for power management applications. It can effectively control the flow of current in power switches, DC-DC converters, and power protection circuits. In these applications, its efficient switching performance helps improve system efficiency and reduce power losses. For example, in computer power supplies and high-efficiency LED driver power supplies, this MOSFET can be used as the main switching element.
2. **Motor drive**
In motor drive systems, the high current handling capability of IRFIZ24GPBF-VB makes it suitable as a motor drive switching element. It can stably control the starting and running of the motor, especially in applications that require high power and high efficiency. For example, in power tools and electric vehicles, this MOSFET can be used to control the speed and torque of the motor.
3. **High power switch**
Due to its low on-resistance, IRFIZ24GPBF-VB is very suitable for high power switching applications. In these applications, it can efficiently switch high current loads, such as in power converters and switching power supplies. It can also be used for the control of high power loads, such as in industrial equipment and power control systems as the main switching element.
4. **Automotive Electronics**
In automotive electronic systems, the IRFIZ24GPBF-VB can be used for high power load switching and power management modules. Its high current handling capability and low on-resistance make it suitable for power converters, battery management systems, and motor control modules in automobiles. For example, in electric vehicle charging systems and automotive power seat controls, this MOSFET ensures efficient and reliable current switching.
5. **Chargers and Adapters**
The low on-resistance and high current capability of the IRFIZ24GPBF-VB make it an ideal choice for chargers and adapters. In these devices, it can provide efficient current control and switching functions, improve device performance and reduce energy loss. For example, in fast chargers and laptop adapters, this MOSFET can be used for efficient current switching and protection.
The low on-resistance and high current capability of the IRFIZ24GPBF-VB enable it to excel in multiple high-performance power management and switching applications. Its efficient Trench technology design ensures reliable switching performance and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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