中文
English
IRFIZ24EPBF-VB Product details
Back to previous pageProduct introduction：
IRFIZ24EPBF-VB MOSFET Product Introduction:
**IRFIZ24EPBF-VB** is a high-performance N-channel MOSFET in **TO220F** package. This MOSFET has a high drain-source voltage tolerance (60V) and high current handling capability (45A), suitable for applications requiring high switching speed and low on-resistance. Its threshold voltage is 1.7V, ensuring stable operation even at low gate voltage. The on-state resistance is 27mΩ (at VGS=10V), which helps reduce switching losses. Using **Trench** technology, this MOSFET is suitable for a variety of power switching and load driving applications.
**IRFIZ24EPBF-VB** is a high-performance N-channel MOSFET in **TO220F** package. This MOSFET has a high drain-source voltage tolerance (60V) and high current handling capability (45A), suitable for applications requiring high switching speed and low on-resistance. Its threshold voltage is 1.7V, ensuring stable operation even at low gate voltage. The on-state resistance is 27mΩ (at VGS=10V), which helps reduce switching losses. Using **Trench** technology, this MOSFET is suitable for a variety of power switching and load driving applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package**: TO220F
The TO220F package design provides good heat dissipation and mechanical strength, suitable for high power and high current applications.
- **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and current control, and can effectively control the current under positive voltage signals.
- **Drain-source voltage (VDS)**: 60V
Supports drain-source voltage up to 60V, suitable for medium voltage switching and load control applications.
- **Gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltage of ±20V, ensuring stable operation under various control signals.
- **Threshold voltage (Vth)**: 1.7V
The low threshold voltage allows the MOSFET to be turned on at a lower gate voltage, suitable for low voltage control applications.
- **On-state resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
Lower on-state resistance helps reduce conduction loss and improve switching efficiency.
- **Drainage current (ID)**: 45A
Maximum leakage current is 45A, suitable for handling higher current loads.
- **Technology**: Trench
Using **Trench** technology, the switching speed and conduction efficiency are improved, suitable for high-performance switching applications.
- **Package**: TO220F
The TO220F package design provides good heat dissipation and mechanical strength, suitable for high power and high current applications.
- **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and current control, and can effectively control the current under positive voltage signals.
- **Drain-source voltage (VDS)**: 60V
Supports drain-source voltage up to 60V, suitable for medium voltage switching and load control applications.
- **Gate-source voltage (VGS)**: ±20V
Able to withstand gate-source voltage of ±20V, ensuring stable operation under various control signals.
- **Threshold voltage (Vth)**: 1.7V
The low threshold voltage allows the MOSFET to be turned on at a lower gate voltage, suitable for low voltage control applications.
- **On-state resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
Lower on-state resistance helps reduce conduction loss and improve switching efficiency.
- **Drainage current (ID)**: 45A
Maximum leakage current is 45A, suitable for handling higher current loads.
- **Technology**: Trench
Using **Trench** technology, the switching speed and conduction efficiency are improved, suitable for high-performance switching applications.
Domain and module applications：
Applications and module examples:
1. **Power Switching**:
**IRFIZ24EPBF-VB** is suitable for various power switching applications, such as DC-DC converters and power management modules. Its high current handling capability and low on-resistance enable it to efficiently transfer current in power switches, reduce switching losses, and improve overall efficiency.
2. **Motor Driving**:
In motor driving applications, **IRFIZ24EPBF-VB** can be used as a switching element in motor drive circuits. Its high current handling capability (45A) and low on-resistance (27mΩ) enable it to effectively drive motors, suitable for use in motor controllers and drive circuits.
3. **Power Amplifiers**:
This MOSFET can be used for switch and load control in power amplifiers, providing stable current control capabilities. **IRFIZ24EPBF-VB** can ensure good performance and efficiency in power amplifier designs that require high switching speeds and low on-resistance.
4. **Load Switching**:
In load switching applications, such as battery-powered systems and switching power supplies, **IRFIZ24EPBF-VB** can effectively control load current. Its low on-resistance helps reduce power losses and improve system reliability.
5. **Power Management Systems**:
In power management systems, **IRFIZ24EPBF-VB** can be used as an efficient switching element. Its high current handling capability and low on-resistance make it suitable for use in power regulation and management circuits to improve the overall efficiency and stability of the power system.
**IRFIZ24EPBF-VB**'s low threshold voltage and high current handling capability make it excel in a variety of high-efficiency switching applications, suitable for use in power management, motor drive, and power amplification.
1. **Power Switching**:
**IRFIZ24EPBF-VB** is suitable for various power switching applications, such as DC-DC converters and power management modules. Its high current handling capability and low on-resistance enable it to efficiently transfer current in power switches, reduce switching losses, and improve overall efficiency.
2. **Motor Driving**:
In motor driving applications, **IRFIZ24EPBF-VB** can be used as a switching element in motor drive circuits. Its high current handling capability (45A) and low on-resistance (27mΩ) enable it to effectively drive motors, suitable for use in motor controllers and drive circuits.
3. **Power Amplifiers**:
This MOSFET can be used for switch and load control in power amplifiers, providing stable current control capabilities. **IRFIZ24EPBF-VB** can ensure good performance and efficiency in power amplifier designs that require high switching speeds and low on-resistance.
4. **Load Switching**:
In load switching applications, such as battery-powered systems and switching power supplies, **IRFIZ24EPBF-VB** can effectively control load current. Its low on-resistance helps reduce power losses and improve system reliability.
5. **Power Management Systems**:
In power management systems, **IRFIZ24EPBF-VB** can be used as an efficient switching element. Its high current handling capability and low on-resistance make it suitable for use in power regulation and management circuits to improve the overall efficiency and stability of the power system.
**IRFIZ24EPBF-VB**'s low threshold voltage and high current handling capability make it excel in a variety of high-efficiency switching applications, suitable for use in power management, motor drive, and power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
