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IRFIR9024M-VB Product details

Product introduction:

IRFIR9024M-VB MOSFET Product Introduction

The IRFIR9024M-VB is a single P-channel MOSFET in a TO252 package designed to handle high current loads in negative voltage environments. This MOSFET is manufactured using Trench technology and has a low on-resistance, making it suitable for high-efficiency switching applications. Its high current handling capability and relatively low on-resistance make it an ideal choice for a variety of power management and switching applications.


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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

- **Package**: TO252, suitable for medium power applications with good heat dissipation performance.
- **Configuration**: Single P-channel MOSFET.
- **VDS (drain-source voltage)**: -60V, capable of handling negative voltage loads.
- **VGS (gate-source voltage)**: ±20V, supporting a wide gate drive voltage range.
- **Vth (threshold voltage)**: -1.7V, ensuring that the MOSFET can be stably turned on even at low gate voltages.
- **RDS(ON) (on-resistance)**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
- **ID (continuous leakage current)**: -30A, suitable for high current loads.
- **Technology**: Trench technology, providing low on-resistance and efficient switching performance.

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Domain and module applications:


Application Examples

1. **DC-DC Converter**:
In **DC-DC Converter** applications, the IRFIR9024M-VB can be used as a high-efficiency switching element. Its low on-resistance and high current handling capability make it suitable for high-power converters to reduce power consumption and improve efficiency.

2. **Power Management Module**:
In **Power Management Module**, MOSFETs can be used for power switching or power regulation circuits, especially in negative voltage environments. Its high current carrying capability and low on-resistance enable it to effectively manage power distribution.

3. **Negative Voltage Switch**:
In **Negative Voltage Switch** applications, this MOSFET is able to handle negative voltage loads and provide stable switching performance. Its lower on-resistance ensures high efficiency and low energy loss in switching operations.

4. **Power amplifier**:
In **power amplifier**, IRFIR9024M-VB can be used as a switching element in the input or output stage to handle large negative currents. Its high current capability and low on-resistance are critical to improving the performance and efficiency of the amplifier.

5. **Electric vehicle control system**:
In **electric vehicle control system**, MOSFETs can be used for motor control and battery management systems. Its high current handling capability and stability are critical to the reliable operation of electric vehicles.

Due to its negative voltage handling capability, high current carrying capacity and low on-resistance, IRFIR9024M-VB is widely used in DC-DC converters, power management modules, negative voltage switches, power amplifiers and electric vehicle control systems.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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