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IRFIBE30G-103-VB Product details
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IRFIBE30G-103-VB Product Introduction
IRFIBE30G-103-VB is a high voltage single N-channel power MOSFET in a **TO220F** package using **Plannar** technology. This MOSFET is capable of handling drain-source voltages (VDS) up to **850V**, making it suitable for applications that need to handle high voltages. Its higher threshold voltage (Vth) of **3.5V** provides an **2200mΩ** on-resistance at VGS=10V and is capable of handling a **5A** maximum drain current (ID). The IRFIBE30G-103-VB is designed to meet the reliability and performance requirements in high voltage environments and is particularly suitable for high voltage switching and control applications.
IRFIBE30G-103-VB is a high voltage single N-channel power MOSFET in a **TO220F** package using **Plannar** technology. This MOSFET is capable of handling drain-source voltages (VDS) up to **850V**, making it suitable for applications that need to handle high voltages. Its higher threshold voltage (Vth) of **3.5V** provides an **2200mΩ** on-resistance at VGS=10V and is capable of handling a **5A** maximum drain current (ID). The IRFIBE30G-103-VB is designed to meet the reliability and performance requirements in high voltage environments and is particularly suitable for high voltage switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.5V | 5A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
The TO220F package provides good heat dissipation and mechanical strength, allowing the MOSFET to work reliably in high power and high voltage applications.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for high voltage switching and power regulation applications, and its good conductivity makes it suitable for handling medium current loads.
3. **Drain-source voltage (VDS)**: 850V
The MOSFET is capable of handling drain-source voltages up to 850V, suitable for switching and control applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
The wide range of gate-source voltage makes it suitable for various gate drive circuits, providing flexible design options.
5. **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage ensures that the MOSFET can operate stably under high voltage.
6. **On-resistance (RDS(ON))**:
- **2200mΩ @ VGS=10V**
This on-resistance value is suitable for medium current loads and provides stable switching performance.
7. **Maximum drain current (ID)**: 5A
Able to handle drain currents up to 5A, suitable for applications that need to handle medium current loads.
8. **Technology**: Plannar
Plannar technology makes it suitable for high voltage applications, providing stable electrical performance and voltage resistance.
1. **Package**: TO220F
The TO220F package provides good heat dissipation and mechanical strength, allowing the MOSFET to work reliably in high power and high voltage applications.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for high voltage switching and power regulation applications, and its good conductivity makes it suitable for handling medium current loads.
3. **Drain-source voltage (VDS)**: 850V
The MOSFET is capable of handling drain-source voltages up to 850V, suitable for switching and control applications in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
The wide range of gate-source voltage makes it suitable for various gate drive circuits, providing flexible design options.
5. **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage ensures that the MOSFET can operate stably under high voltage.
6. **On-resistance (RDS(ON))**:
- **2200mΩ @ VGS=10V**
This on-resistance value is suitable for medium current loads and provides stable switching performance.
7. **Maximum drain current (ID)**: 5A
Able to handle drain currents up to 5A, suitable for applications that need to handle medium current loads.
8. **Technology**: Plannar
Plannar technology makes it suitable for high voltage applications, providing stable electrical performance and voltage resistance.
Domain and module applications：
Applications and module examples
1. **High voltage power switch**
IRFIBE30G-103-VB is suitable for **high voltage power switch** applications. Its 850V drain-source voltage capability enables it to work stably in high voltage environments, handle high voltage load switching, and ensure system stability and reliability.
2. **Power management system**
In **power management systems**, IRFIBE30G-103-VB can be used as a high voltage switch component to handle high voltage power regulation and control requirements. Its high voltage tolerance and reliable switching performance make it excellent in power management.
3. **High voltage motor drive**
IRFIBE30G-103-VB can be used in **high voltage motor drive** systems for switching and regulation in motor control. Its high voltage handling capability is suitable for the control of high voltage motors to ensure stable operation of the system.
4. **Power Inverter**
In **Power Inverter** applications, IRFIBE30G-103-VB is suitable for power switching and control in high voltage environments. It can handle high voltage input and output, providing efficient inverter performance.
5. **Industrial Control Systems**
In **Industrial Control Systems**, IRFIBE30G-103-VB can be used for control modules and switching circuits in high voltage environments. Its high voltage tolerance and stable switching performance make it suitable for use in industrial control and automation systems.
IRFIBE30G-103-VB's high voltage handling capability and reliable switching performance make it widely used in high voltage power switching, power management, high voltage motor drive, power inverters and industrial control systems.
1. **High voltage power switch**
IRFIBE30G-103-VB is suitable for **high voltage power switch** applications. Its 850V drain-source voltage capability enables it to work stably in high voltage environments, handle high voltage load switching, and ensure system stability and reliability.
2. **Power management system**
In **power management systems**, IRFIBE30G-103-VB can be used as a high voltage switch component to handle high voltage power regulation and control requirements. Its high voltage tolerance and reliable switching performance make it excellent in power management.
3. **High voltage motor drive**
IRFIBE30G-103-VB can be used in **high voltage motor drive** systems for switching and regulation in motor control. Its high voltage handling capability is suitable for the control of high voltage motors to ensure stable operation of the system.
4. **Power Inverter**
In **Power Inverter** applications, IRFIBE30G-103-VB is suitable for power switching and control in high voltage environments. It can handle high voltage input and output, providing efficient inverter performance.
5. **Industrial Control Systems**
In **Industrial Control Systems**, IRFIBE30G-103-VB can be used for control modules and switching circuits in high voltage environments. Its high voltage tolerance and stable switching performance make it suitable for use in industrial control and automation systems.
IRFIBE30G-103-VB's high voltage handling capability and reliable switching performance make it widely used in high voltage power switching, power management, high voltage motor drive, power inverters and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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