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IRFIBC40G-VB Product details
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IRFIBC40G-VB Product Introduction
**IRFIBC40G-VB** is a unipolar N-channel MOSFET in a **TO220F** package, designed for high voltage applications. With a maximum drain-source voltage of 650V, this MOSFET is capable of handling higher voltage loads, and its channel on-resistance is 1100mΩ (VGS = 10V), which is suitable for switching operations under medium current conditions. It uses Plannar technology, which enables it to exhibit stable switching performance and reliability in high voltage environments. IRFIBC40G-VB provides efficient current control and low power consumption, suitable for a variety of high voltage electronic applications.
**IRFIBC40G-VB** is a unipolar N-channel MOSFET in a **TO220F** package, designed for high voltage applications. With a maximum drain-source voltage of 650V, this MOSFET is capable of handling higher voltage loads, and its channel on-resistance is 1100mΩ (VGS = 10V), which is suitable for switching operations under medium current conditions. It uses Plannar technology, which enables it to exhibit stable switching performance and reliability in high voltage environments. IRFIBC40G-VB provides efficient current control and low power consumption, suitable for a variety of high voltage electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IRFIBC40G-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: IRFIBC40G-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
1. **High voltage switch applications**: IRFIBC40G-VB is suitable for use as a high voltage switch, such as switch control in high voltage power systems. This MOSFET can stably handle high voltage loads and is widely used in high voltage power protection and power converters, providing reliable switching performance and low power consumption.
2. **Inverter**: In high voltage inverter applications, IRFIBC40G-VB can effectively convert DC to AC. Its high voltage tolerance and stable switching performance ensure efficient operation of the inverter system, helping to improve the overall efficiency and stability of the system.
3. **Power management system**: IRFIBC40G-VB is very suitable for power management systems, especially in switching power supplies and power regulators that need to handle high voltages. Its medium on-resistance and high voltage handling capabilities ensure efficient power conversion and management, improving system performance and reliability.
4. **High voltage load control**: This MOSFET can be used in high voltage load control applications such as high voltage motor drive and power switching circuits. Its high voltage tolerance and effective switching capability ensure stable control under high load voltage conditions, suitable for switching operations of various high voltage loads.
In summary, IRFIBC40G-VB is a high voltage, high power density N-channel MOSFET. With its excellent performance, it is suitable for a variety of applications such as high voltage switching, inverters, power management and load control.
1. **High voltage switch applications**: IRFIBC40G-VB is suitable for use as a high voltage switch, such as switch control in high voltage power systems. This MOSFET can stably handle high voltage loads and is widely used in high voltage power protection and power converters, providing reliable switching performance and low power consumption.
2. **Inverter**: In high voltage inverter applications, IRFIBC40G-VB can effectively convert DC to AC. Its high voltage tolerance and stable switching performance ensure efficient operation of the inverter system, helping to improve the overall efficiency and stability of the system.
3. **Power management system**: IRFIBC40G-VB is very suitable for power management systems, especially in switching power supplies and power regulators that need to handle high voltages. Its medium on-resistance and high voltage handling capabilities ensure efficient power conversion and management, improving system performance and reliability.
4. **High voltage load control**: This MOSFET can be used in high voltage load control applications such as high voltage motor drive and power switching circuits. Its high voltage tolerance and effective switching capability ensure stable control under high load voltage conditions, suitable for switching operations of various high voltage loads.
In summary, IRFIBC40G-VB is a high voltage, high power density N-channel MOSFET. With its excellent performance, it is suitable for a variety of applications such as high voltage switching, inverters, power management and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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