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IRFIBC40GPBF-VB Product details
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IRFIBC40GPBF-VB Product Introduction
**IRFIBC40GPBF-VB** is a unipolar N-channel MOSFET in **TO220F** package, designed for high voltage applications. It has a maximum drain-source voltage of 650V and can stably handle higher voltage loads. The channel on-resistance of this MOSFET is 1100mΩ (VGS = 10V), providing effective switching performance under medium current conditions. Using Plannar technology, this MOSFET is suitable for various electronic applications in high voltage environments, providing good switching speed and stability.
**IRFIBC40GPBF-VB** is a unipolar N-channel MOSFET in **TO220F** package, designed for high voltage applications. It has a maximum drain-source voltage of 650V and can stably handle higher voltage loads. The channel on-resistance of this MOSFET is 1100mΩ (VGS = 10V), providing effective switching performance under medium current conditions. Using Plannar technology, this MOSFET is suitable for various electronic applications in high voltage environments, providing good switching speed and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: IRFIBC40GPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: IRFIBC40GPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
1. **High voltage power switch**: IRFIBC40GPBF-VB is suitable for high voltage power switch applications. Its high drain-source voltage capability enables it to stably switch control current in high voltage power systems, commonly found in high voltage power protection and power converters, providing reliable switching performance and low power operation.
2. **Inverter**: In inverter circuits, this MOSFET can be used as a switching element for high voltage DC to AC conversion. Its high voltage tolerance and stable switching performance ensure the efficient operation of the inverter in a high voltage environment, improving the conversion efficiency and reliability of the system.
3. **Power management system**: IRFIBC40GPBF-VB is suitable for high voltage applications in power management systems, such as switching power supplies and power regulators. In these applications, its medium on-resistance and high voltage capability can provide effective power conversion and management, ensuring system stability and efficiency.
4. **High voltage load control**: This MOSFET can be used in high voltage load control applications, such as high voltage motor drives and power switching circuits. Its high voltage withstand capability and effective switching performance enable it to provide reliable control in these load high voltage environments, and is suitable for switching operations of various high voltage loads.
In general, the IRFIBC40GPBF-VB is a high voltage, high power density N-channel MOSFET, and its excellent performance makes it have a wide range of application potentials in high voltage power switching, inverters, power management and load control.
1. **High voltage power switch**: IRFIBC40GPBF-VB is suitable for high voltage power switch applications. Its high drain-source voltage capability enables it to stably switch control current in high voltage power systems, commonly found in high voltage power protection and power converters, providing reliable switching performance and low power operation.
2. **Inverter**: In inverter circuits, this MOSFET can be used as a switching element for high voltage DC to AC conversion. Its high voltage tolerance and stable switching performance ensure the efficient operation of the inverter in a high voltage environment, improving the conversion efficiency and reliability of the system.
3. **Power management system**: IRFIBC40GPBF-VB is suitable for high voltage applications in power management systems, such as switching power supplies and power regulators. In these applications, its medium on-resistance and high voltage capability can provide effective power conversion and management, ensuring system stability and efficiency.
4. **High voltage load control**: This MOSFET can be used in high voltage load control applications, such as high voltage motor drives and power switching circuits. Its high voltage withstand capability and effective switching performance enable it to provide reliable control in these load high voltage environments, and is suitable for switching operations of various high voltage loads.
In general, the IRFIBC40GPBF-VB is a high voltage, high power density N-channel MOSFET, and its excellent performance makes it have a wide range of application potentials in high voltage power switching, inverters, power management and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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