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IRFIBC30-VB Product details
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Product Introduction: IRFIBC30-VB
IRFIBC30-VB is a high voltage N-channel MOSFET in TO220F package. It is designed mainly for high voltage applications, providing a drain-source voltage (VDS) of 650V and a maximum drain current of 4A. IRFIBC30-VB uses Plannar technology, which gives it a high voltage tolerance, but its on-resistance (RDS(ON)) is relatively high. The MOSFET performs well at a gate-source voltage of 30V and is suitable for applications that require high voltage switching and load control.
IRFIBC30-VB is a high voltage N-channel MOSFET in TO220F package. It is designed mainly for high voltage applications, providing a drain-source voltage (VDS) of 650V and a maximum drain current of 4A. IRFIBC30-VB uses Plannar technology, which gives it a high voltage tolerance, but its on-resistance (RDS(ON)) is relatively high. The MOSFET performs well at a gate-source voltage of 30V and is suitable for applications that require high voltage switching and load control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
1. **Package type**: TO220F
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 4A
8. **Pulsed drain current**: Higher than continuous drain current, depending on application conditions
9. **Technology**: Plannar technology
10. **Maximum power dissipation**: Depends on heat dissipation conditions and ambient temperature
11. **Operating temperature range**: -55°C to 150°C
12. **Total gate charge (Qg)**: affects switching speed
13. **Input capacitance (Ciss)**: affects switching characteristics
1. **Package type**: TO220F
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 4A
8. **Pulsed drain current**: Higher than continuous drain current, depending on application conditions
9. **Technology**: Plannar technology
10. **Maximum power dissipation**: Depends on heat dissipation conditions and ambient temperature
11. **Operating temperature range**: -55°C to 150°C
12. **Total gate charge (Qg)**: affects switching speed
13. **Input capacitance (Ciss)**: affects switching characteristics
Domain and module applications：
Application fields and module examples:
1. **High voltage switching applications**
The high voltage capability (650V) of IRFIBC30-VB makes it suitable for high voltage switching applications. In these applications, MOSFET can be used as a switching element for high voltage power supply to ensure the stability and safety of the power supply. For example, in high voltage power adapters and power protection circuits, this MOSFET can reliably control the current flow and power switching.
2. **Power converters**
In power converters, such as DC-DC converters and AC-DC converters, IRFIBC30-VB can be used for switching operations at high voltage levels. Although its on-resistance is high, its high voltage capability makes it suitable for use in converter designs that require high voltage tolerance. For example, in industrial power converters and power conditioning modules, this MOSFET can stably handle high voltage switching operations.
3. **Motor drive systems**
In some motor drive systems, especially those requiring high voltage applications, IRFIBC30-VB can be used as a switching element in motor control. Although its on-resistance is relatively high, its high voltage capability makes it effective in motor starting and protection systems. For example, in high voltage motor drive systems, this MOSFET can be used to control the starting and operation of the motor.
4. **High Voltage Load Switching**
This MOSFET is also suitable for switching applications of high voltage loads. In these systems, the IRFIBC30-VB can be used as a load switching element to manage and control the operation of high voltage loads. For example, in load switching applications in high voltage battery management systems and power equipment, this MOSFET is able to stably handle and control high voltage loads.
5. **Automotive Electrical Systems**
The IRFIBC30-VB can also be used in automotive electrical systems, especially in high voltage power control and protection circuits. Its high voltage withstand capability makes it suitable for power management applications in automobiles, such as high voltage battery management and protection circuits.
The high voltage capability and reliable switching characteristics of the IRFIBC30-VB make it excel in high voltage and high power applications. Despite its higher on-resistance, it is suitable for specific application scenarios where high voltage handling capability is a key requirement.
1. **High voltage switching applications**
The high voltage capability (650V) of IRFIBC30-VB makes it suitable for high voltage switching applications. In these applications, MOSFET can be used as a switching element for high voltage power supply to ensure the stability and safety of the power supply. For example, in high voltage power adapters and power protection circuits, this MOSFET can reliably control the current flow and power switching.
2. **Power converters**
In power converters, such as DC-DC converters and AC-DC converters, IRFIBC30-VB can be used for switching operations at high voltage levels. Although its on-resistance is high, its high voltage capability makes it suitable for use in converter designs that require high voltage tolerance. For example, in industrial power converters and power conditioning modules, this MOSFET can stably handle high voltage switching operations.
3. **Motor drive systems**
In some motor drive systems, especially those requiring high voltage applications, IRFIBC30-VB can be used as a switching element in motor control. Although its on-resistance is relatively high, its high voltage capability makes it effective in motor starting and protection systems. For example, in high voltage motor drive systems, this MOSFET can be used to control the starting and operation of the motor.
4. **High Voltage Load Switching**
This MOSFET is also suitable for switching applications of high voltage loads. In these systems, the IRFIBC30-VB can be used as a load switching element to manage and control the operation of high voltage loads. For example, in load switching applications in high voltage battery management systems and power equipment, this MOSFET is able to stably handle and control high voltage loads.
5. **Automotive Electrical Systems**
The IRFIBC30-VB can also be used in automotive electrical systems, especially in high voltage power control and protection circuits. Its high voltage withstand capability makes it suitable for power management applications in automobiles, such as high voltage battery management and protection circuits.
The high voltage capability and reliable switching characteristics of the IRFIBC30-VB make it excel in high voltage and high power applications. Despite its higher on-resistance, it is suitable for specific application scenarios where high voltage handling capability is a key requirement.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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