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IRFIBC20-VB Product details
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IRFIBC20-VB MOSFET Product Introduction:
**IRFIBC20-VB** is a high voltage tolerant N-channel MOSFET in **TO220F** package. It can withstand drain-source voltages up to 650V and has a maximum gate-source voltage of ±30V. The threshold voltage of this MOSFET is 3.5V, suitable for applications requiring high voltage and medium current control. The on-state resistance is 1700mΩ (at VGS=10V) and the maximum leakage current is 2A. Using **Plannar** technology, this MOSFET provides good electrical characteristics and reliability, and is particularly suitable for high voltage switching and protection circuits.
**IRFIBC20-VB** is a high voltage tolerant N-channel MOSFET in **TO220F** package. It can withstand drain-source voltages up to 650V and has a maximum gate-source voltage of ±30V. The threshold voltage of this MOSFET is 3.5V, suitable for applications requiring high voltage and medium current control. The on-state resistance is 1700mΩ (at VGS=10V) and the maximum leakage current is 2A. Using **Plannar** technology, this MOSFET provides good electrical characteristics and reliability, and is particularly suitable for high voltage switching and protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package**: TO220F
The TO220F package provides good heat dissipation and mechanical strength, suitable for applications requiring high power handling.
- **Configuration**: Single N-channel
As an N-channel MOSFET, it can be used for switch control and load drive, suitable for positive voltage control applications.
- **Drain-source voltage (VDS)**: 650V
The MOSFET can withstand drain-source voltages up to 650V, suitable for high voltage power supplies and switching applications.
- **Gate-source voltage (VGS)**: ±30V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage allows the MOSFET to turn on at a higher gate voltage, suitable for medium voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
The higher on-state resistance makes the conduction loss relatively large in low current applications.
- **Drainage current (ID)**: 2A
The maximum leakage current is 2A, which is suitable for handling medium current loads.
- **Technology**: Plannar
**Plannar** technology provides high voltage withstand capability and good electrical characteristics, suitable for high voltage applications.
- **Package**: TO220F
The TO220F package provides good heat dissipation and mechanical strength, suitable for applications requiring high power handling.
- **Configuration**: Single N-channel
As an N-channel MOSFET, it can be used for switch control and load drive, suitable for positive voltage control applications.
- **Drain-source voltage (VDS)**: 650V
The MOSFET can withstand drain-source voltages up to 650V, suitable for high voltage power supplies and switching applications.
- **Gate-source voltage (VGS)**: ±30V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage allows the MOSFET to turn on at a higher gate voltage, suitable for medium voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
The higher on-state resistance makes the conduction loss relatively large in low current applications.
- **Drainage current (ID)**: 2A
The maximum leakage current is 2A, which is suitable for handling medium current loads.
- **Technology**: Plannar
**Plannar** technology provides high voltage withstand capability and good electrical characteristics, suitable for high voltage applications.
Domain and module applications：
Applications and module examples:
1. **High-Voltage Power Switches**:
**IRFIBC20-VB** can be used for high-voltage power switches, especially in power systems that need to handle high voltages. Its high drain-source voltage capability makes it suitable for use in power switches and control circuits, capable of withstanding voltages up to 650V.
2. **Power Protection Circuits**:
In power protection circuits, **IRFIBC20-VB** can be used as a switching element to protect circuits from high voltage surges. Its high voltage handling capability and stability help ensure the safety and reliability of power systems.
3. **High-Voltage Load Control**:
This MOSFET is suitable for high-voltage load control applications, such as high-voltage motor control and switching. Its high voltage tolerance and stable switching characteristics make it an ideal choice for load control in high-voltage environments.
4. **Inverters and Converters**:
In inverters and power converters, **IRFIBC20-VB** can be used as a high voltage switch to regulate and control the power conversion process. Its high voltage and current handling capabilities make it suitable for these high power applications.
5. **Power Management Systems**:
In power management systems, this MOSFET can be used in high voltage switching and protection applications to ensure stable operation of the power system under high voltage conditions. Its high voltage tolerance and reliability make it excel in power management.
**IRFIBC20-VB**'s high voltage tolerance and higher threshold voltage make it perform well in high voltage and medium current applications, suitable for a variety of high voltage switches, protection circuits, and load control applications.
1. **High-Voltage Power Switches**:
**IRFIBC20-VB** can be used for high-voltage power switches, especially in power systems that need to handle high voltages. Its high drain-source voltage capability makes it suitable for use in power switches and control circuits, capable of withstanding voltages up to 650V.
2. **Power Protection Circuits**:
In power protection circuits, **IRFIBC20-VB** can be used as a switching element to protect circuits from high voltage surges. Its high voltage handling capability and stability help ensure the safety and reliability of power systems.
3. **High-Voltage Load Control**:
This MOSFET is suitable for high-voltage load control applications, such as high-voltage motor control and switching. Its high voltage tolerance and stable switching characteristics make it an ideal choice for load control in high-voltage environments.
4. **Inverters and Converters**:
In inverters and power converters, **IRFIBC20-VB** can be used as a high voltage switch to regulate and control the power conversion process. Its high voltage and current handling capabilities make it suitable for these high power applications.
5. **Power Management Systems**:
In power management systems, this MOSFET can be used in high voltage switching and protection applications to ensure stable operation of the power system under high voltage conditions. Its high voltage tolerance and reliability make it excel in power management.
**IRFIBC20-VB**'s high voltage tolerance and higher threshold voltage make it perform well in high voltage and medium current applications, suitable for a variety of high voltage switches, protection circuits, and load control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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