IRFIBC20GPBF-VB Product details
Product introduction:
IRFIBC20GPBF-VB is a high voltage single N-channel MOSFET in TO220F package. Manufactured based on Plannar technology, this MOSFET is designed for switching applications in high voltage environments and is suitable for handling high voltage loads. Although its on-resistance is relatively high, it is still suitable for applications that require stability and high voltage withstand capability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F, suitable for applications with high power heat dissipation requirements.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 650V, capable of handling medium to high voltage loads.
- **VGS (gate-source voltage)**: ±30V, supporting a wide range of gate drive voltages.
- **Vth (threshold voltage)**: 3.5V, ensuring stable conduction under normal operating conditions.
- **RDS(ON) (on-resistance)**:
- 1700mΩ @ VGS=10V
- **ID (continuous leakage current)**: 2A, suitable for medium current loads.
- **Technology**: Plannar technology, suitable for high voltage environments, but the on-resistance is relatively high.
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Domain and module applications:
1. **High Voltage Power Switch**:
In **High Voltage Power Switch** applications, the 650V drain-source voltage of IRFIBC20GPBF-VB enables it to handle high voltage loads. Despite the high on-resistance, its high voltage capability enables it to operate stably in power switches and is suitable for power modules that require high voltage isolation.
2. **Industrial Control Systems**:
In **Industrial Control Systems**, this MOSFET can be used as a high voltage control switch. Its stable threshold voltage and high voltage withstand capability enable it to handle high voltage signals in industrial control equipment.
3. **High Voltage Protection Circuit**:
In **High Voltage Protection Circuit**, IRFIBC20GPBF-VB can be used as a switching element in a protection circuit to prevent damage to the circuit due to excessive voltage. Its high voltage withstand capability can effectively protect other components in the circuit.
4. **Motor Drive**:
In **Motor Drive** applications, this MOSFET can be used as a switching element in high voltage motor control circuits. Despite its high on-resistance, it can still provide stable switching performance in high voltage applications of motor drives.
5. **Power Inverter**:
In **Power Inverter**, the high voltage capability of the IRFIBC20GPBF-VB enables it to be used in high voltage switches in inverters, handling the conversion of electrical energy from DC to AC.
Due to its high voltage capability and stability, the IRFIBC20GPBF-VB can provide reliable performance in applications such as high voltage power switches, industrial control systems, high voltage protection circuits, motor drives, and power inverters.
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