中文
English
IRFIB7N50LPBF-VB Product details
Back to previous pageProduct introduction：
1. IRFIB7N50LPBF-VB Product Introduction
IRFIB7N50LPBF-VB is a high-voltage N-channel power MOSFET in a TO220F package. The MOSFET has a maximum drain-source voltage (VDS) of up to 550V and a maximum drain current (ID) of 18A. Its gate threshold voltage (Vth) is 3V, which allows it to be effectively turned on when the gate-source voltage is low. IRFIB7N50LPBF-VB uses the Plannar process and has a relatively high on-resistance (RDS(ON)), which is 260mΩ at VGS = 10V. This design makes it suitable for high voltage and medium current applications.
IRFIB7N50LPBF-VB is a high-voltage N-channel power MOSFET in a TO220F package. The MOSFET has a maximum drain-source voltage (VDS) of up to 550V and a maximum drain current (ID) of 18A. Its gate threshold voltage (Vth) is 3V, which allows it to be effectively turned on when the gate-source voltage is low. IRFIB7N50LPBF-VB uses the Plannar process and has a relatively high on-resistance (RDS(ON)), which is 260mΩ at VGS = 10V. This design makes it suitable for high voltage and medium current applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of IRFIB7N50LPBF-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Process technology**: Plannar
- **Maximum power dissipation**: 94W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F package provides good heat dissipation characteristics
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Process technology**: Plannar
- **Maximum power dissipation**: 94W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F package provides good heat dissipation characteristics
Domain and module applications：
III. Application Fields and Module Description
1. **High Voltage Power Switch**: The high drain-source voltage capability of IRFIB7N50LPBF-VB makes it very suitable for high voltage power switch. In power management modules, it can effectively handle high voltage applications such as high voltage power converters and power distribution circuits to ensure the safety and stability of the system.
2. **Inverter**: In solar inverters and other inverter applications, the high withstand voltage characteristics of this MOSFET enable it to work stably in high voltage environments. It is suitable for scenarios where DC power is converted to AC power and can handle large current loads.
3. **Motor Drive**: In motor drive circuits, IRFIB7N50LPBF-VB can be used as a high voltage switch. Its high withstand voltage capability enables it to drive high voltage motor loads while maintaining stable performance, making it suitable for use in motor control modules.
4. **Power Converter**: In high voltage power converters, this MOSFET is able to handle high voltage and medium current, making it suitable for power conversion and management. It can be used in high voltage DC-DC converters and power conditioning modules to provide efficient power conversion solutions.
5. **High Voltage Switching Modules**: The high drain-source voltage capability and medium on-resistance of this MOSFET make it suitable for high voltage switching modules. It is able to provide reliable switching performance and stability in applications that need to handle high voltage and medium current.
6. **Power Protection**: In power protection circuits, IRFIB7N50LPBF-VB can be used to protect power supplies from overvoltage and overcurrent. Its high withstand voltage and medium on-resistance characteristics enable it to effectively disconnect circuits under overload current and high voltage conditions.
The design of IRFIB7N50LPBF-VB makes it perform well in high voltage environments and is suitable for a variety of electronic circuits and modules that require high voltage and medium current handling.
1. **High Voltage Power Switch**: The high drain-source voltage capability of IRFIB7N50LPBF-VB makes it very suitable for high voltage power switch. In power management modules, it can effectively handle high voltage applications such as high voltage power converters and power distribution circuits to ensure the safety and stability of the system.
2. **Inverter**: In solar inverters and other inverter applications, the high withstand voltage characteristics of this MOSFET enable it to work stably in high voltage environments. It is suitable for scenarios where DC power is converted to AC power and can handle large current loads.
3. **Motor Drive**: In motor drive circuits, IRFIB7N50LPBF-VB can be used as a high voltage switch. Its high withstand voltage capability enables it to drive high voltage motor loads while maintaining stable performance, making it suitable for use in motor control modules.
4. **Power Converter**: In high voltage power converters, this MOSFET is able to handle high voltage and medium current, making it suitable for power conversion and management. It can be used in high voltage DC-DC converters and power conditioning modules to provide efficient power conversion solutions.
5. **High Voltage Switching Modules**: The high drain-source voltage capability and medium on-resistance of this MOSFET make it suitable for high voltage switching modules. It is able to provide reliable switching performance and stability in applications that need to handle high voltage and medium current.
6. **Power Protection**: In power protection circuits, IRFIB7N50LPBF-VB can be used to protect power supplies from overvoltage and overcurrent. Its high withstand voltage and medium on-resistance characteristics enable it to effectively disconnect circuits under overload current and high voltage conditions.
The design of IRFIB7N50LPBF-VB makes it perform well in high voltage environments and is suitable for a variety of electronic circuits and modules that require high voltage and medium current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
