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IRFIB6N60APBF-VB Product details
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IRFIB6N60APBF-VB Product Introduction
IRFIB6N60APBF-VB is a high voltage single N-channel power MOSFET packaged in **TO220F**. This MOSFET uses **Plannar** technology and has a drain-source voltage (VDS) capability of up to **650V**, suitable for high voltage applications. It has a higher threshold voltage (Vth) of **3.5V** and provides an on-resistance of **1100mΩ** at VGS=10V. The maximum drain current (ID) is **7A**, which makes it perform well in high voltage environments, especially in power switching and control applications that require high voltage handling.
IRFIB6N60APBF-VB is a high voltage single N-channel power MOSFET packaged in **TO220F**. This MOSFET uses **Plannar** technology and has a drain-source voltage (VDS) capability of up to **650V**, suitable for high voltage applications. It has a higher threshold voltage (Vth) of **3.5V** and provides an on-resistance of **1100mΩ** at VGS=10V. The maximum drain current (ID) is **7A**, which makes it perform well in high voltage environments, especially in power switching and control applications that require high voltage handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
The TO220F package has good heat dissipation performance and is suitable for high power applications that require heat dissipation.
2. **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and power regulation, and performs well in positive power switching applications.
3. **Drain-source voltage (VDS)**: 650V
This MOSFET can handle drain-source voltages up to 650V, making it suitable for high voltage switching and control applications.
4. **Gate-source voltage (VGS)**: ±30V
The wide range of gate-source voltage makes it adaptable to a variety of gate drive circuit designs, providing flexible usage options.
5. **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage ensures that the MOSFET can switch stably at high voltages and provides better switching performance.
6. **On-resistance (RDS(ON))**:
- **1100mΩ @ VGS=10V**
High on-resistance is suitable for medium current load switching applications, but still provides stable performance in high voltage applications.
7. **Maximum drain current (ID)**: 7A
Able to handle drain currents up to 7A, suitable for applications that need to handle medium current loads.
8. **Technology**: Plannar
Plannar technology is suitable for high voltage applications, providing stable electrical performance and high voltage withstand capability.
1. **Package**: TO220F
The TO220F package has good heat dissipation performance and is suitable for high power applications that require heat dissipation.
2. **Configuration**: Single N-channel
N-channel MOSFET is suitable for load switching and power regulation, and performs well in positive power switching applications.
3. **Drain-source voltage (VDS)**: 650V
This MOSFET can handle drain-source voltages up to 650V, making it suitable for high voltage switching and control applications.
4. **Gate-source voltage (VGS)**: ±30V
The wide range of gate-source voltage makes it adaptable to a variety of gate drive circuit designs, providing flexible usage options.
5. **Threshold voltage (Vth)**: 3.5V
The higher threshold voltage ensures that the MOSFET can switch stably at high voltages and provides better switching performance.
6. **On-resistance (RDS(ON))**:
- **1100mΩ @ VGS=10V**
High on-resistance is suitable for medium current load switching applications, but still provides stable performance in high voltage applications.
7. **Maximum drain current (ID)**: 7A
Able to handle drain currents up to 7A, suitable for applications that need to handle medium current loads.
8. **Technology**: Plannar
Plannar technology is suitable for high voltage applications, providing stable electrical performance and high voltage withstand capability.
Domain and module applications：
Applications and module examples
1. **High voltage power switch**
IRFIB6N60APBF-VB performs well in **high voltage power switch** applications. Its 650V drain-source voltage capability makes it suitable for switch control in high voltage environments and can stably handle high power loads.
2. **Power management system**
This MOSFET is suitable for **power management systems**, especially in power switches and power control modules that need to handle high voltages, providing stable switching performance and high voltage tolerance.
3. **High voltage motor drive**
In **high voltage motor drive** systems, IRFIB6N60APBF-VB can be used as a switching component in motor control, capable of handling the switching and regulation requirements of high voltage motors to ensure stable system operation.
4. **Power Inverter**
This MOSFET is also suitable for **power inverter**, used for power switching and control in high voltage environments, providing high voltage handling capabilities and reliable switching performance.
5. **Industrial Control Systems**
In **industrial control systems**, IRFIB6N60APBF-VB can be used for control modules and switching circuits in high voltage environments to ensure stable operation under high voltage conditions.
The high voltage tolerance and reliable switching performance of IRFIB6N60APBF-VB make it widely used in high voltage power switching, power management, high voltage motor drive, power inverter and industrial control systems.
1. **High voltage power switch**
IRFIB6N60APBF-VB performs well in **high voltage power switch** applications. Its 650V drain-source voltage capability makes it suitable for switch control in high voltage environments and can stably handle high power loads.
2. **Power management system**
This MOSFET is suitable for **power management systems**, especially in power switches and power control modules that need to handle high voltages, providing stable switching performance and high voltage tolerance.
3. **High voltage motor drive**
In **high voltage motor drive** systems, IRFIB6N60APBF-VB can be used as a switching component in motor control, capable of handling the switching and regulation requirements of high voltage motors to ensure stable system operation.
4. **Power Inverter**
This MOSFET is also suitable for **power inverter**, used for power switching and control in high voltage environments, providing high voltage handling capabilities and reliable switching performance.
5. **Industrial Control Systems**
In **industrial control systems**, IRFIB6N60APBF-VB can be used for control modules and switching circuits in high voltage environments to ensure stable operation under high voltage conditions.
The high voltage tolerance and reliable switching performance of IRFIB6N60APBF-VB make it widely used in high voltage power switching, power management, high voltage motor drive, power inverter and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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