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IRFI9Z34N-VB Product details
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IRFI9Z34N-VB MOSFET Product Introduction:
**IRFI9Z34N-VB** is a high-performance single P-channel MOSFET in **TO220F** package. It has negative voltage tolerance and a maximum drain-source voltage of -60V, suitable for applications requiring negative voltage control. The threshold voltage of this MOSFET is -1.7V, the on-state resistance is 100mΩ (at VGS=10V), and the maximum leakage current is -20A. It uses **Trench** technology, provides excellent electrical characteristics and high switching speed, and is suitable for use in a variety of negative voltage and high current applications.
**IRFI9Z34N-VB** is a high-performance single P-channel MOSFET in **TO220F** package. It has negative voltage tolerance and a maximum drain-source voltage of -60V, suitable for applications requiring negative voltage control. The threshold voltage of this MOSFET is -1.7V, the on-state resistance is 100mΩ (at VGS=10V), and the maximum leakage current is -20A. It uses **Trench** technology, provides excellent electrical characteristics and high switching speed, and is suitable for use in a variety of negative voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description:
- **Package**: TO220F
The TO220F package has good heat dissipation and mechanical strength, suitable for applications requiring high power handling and stable mounting.
- **Configuration**: Single P-channel
As a P-channel MOSFET, it is suitable for use as a load switch and can operate effectively in a negative voltage environment.
- **Drain-source voltage (VDS)**: -60V
The MOSFET can withstand drain-source voltages up to -60V, suitable for high voltage negative power supply applications.
- **Gate-source voltage (VGS)**: ±20V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: -1.7V
The lower threshold voltage allows the MOSFET to be turned on at a low gate voltage, suitable for low voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
At lower gate voltages, the on-resistance is slightly higher, suitable for medium current applications.
- **Drainage current (ID)**: -20A
Maximum drain current is -20A, suitable for handling medium current loads.
- **Technology**: Trench
**Trench** technology provides lower on-resistance and better switching characteristics, suitable for high performance switching applications.
- **Package**: TO220F
The TO220F package has good heat dissipation and mechanical strength, suitable for applications requiring high power handling and stable mounting.
- **Configuration**: Single P-channel
As a P-channel MOSFET, it is suitable for use as a load switch and can operate effectively in a negative voltage environment.
- **Drain-source voltage (VDS)**: -60V
The MOSFET can withstand drain-source voltages up to -60V, suitable for high voltage negative power supply applications.
- **Gate-source voltage (VGS)**: ±20V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: -1.7V
The lower threshold voltage allows the MOSFET to be turned on at a low gate voltage, suitable for low voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
At lower gate voltages, the on-resistance is slightly higher, suitable for medium current applications.
- **Drainage current (ID)**: -20A
Maximum drain current is -20A, suitable for handling medium current loads.
- **Technology**: Trench
**Trench** technology provides lower on-resistance and better switching characteristics, suitable for high performance switching applications.
Domain and module applications：
Applications and module examples:
1. **Negative Voltage Power Switches**:
**IRFI9Z34N-VB** can be used for negative voltage power switches, especially those applications that require stable control of negative voltage. Its negative voltage handling capability and low on-resistance make it suitable for use in high negative voltage environments.
2. **Battery Management Systems**:
In battery management systems, this MOSFET can be used as a load switch to control the switching operation of negative voltage batteries. Its high current handling capability and negative voltage characteristics make it an ideal choice for battery protection and management.
3. **Motor Drives**:
Suitable for motor control systems that require negative voltage operation. **IRFI9Z34N-VB** can be used as a switching element to achieve motor control, especially in motor drive applications in negative voltage environments.
4. **Power Protection Circuits**:
Used for switch control in power protection circuits, especially negative voltage protection circuits. This MOSFET can withstand high voltages and provide stable switching functions to ensure the safety of the power system.
5. **High-Voltage Load Control**:
In applications where high-voltage loads need to be controlled, such as high-voltage switches and load control circuits, the high-voltage handling capability and stable switching characteristics of the **IRFI9Z34N-VB** enable it to perform well.
The high-voltage handling capability and low on-resistance of the **IRFI9Z34N-VB** enable it to perform well in applications under various high-voltage and negative voltage environments, especially for applications in negative voltage power switches and battery management systems.
1. **Negative Voltage Power Switches**:
**IRFI9Z34N-VB** can be used for negative voltage power switches, especially those applications that require stable control of negative voltage. Its negative voltage handling capability and low on-resistance make it suitable for use in high negative voltage environments.
2. **Battery Management Systems**:
In battery management systems, this MOSFET can be used as a load switch to control the switching operation of negative voltage batteries. Its high current handling capability and negative voltage characteristics make it an ideal choice for battery protection and management.
3. **Motor Drives**:
Suitable for motor control systems that require negative voltage operation. **IRFI9Z34N-VB** can be used as a switching element to achieve motor control, especially in motor drive applications in negative voltage environments.
4. **Power Protection Circuits**:
Used for switch control in power protection circuits, especially negative voltage protection circuits. This MOSFET can withstand high voltages and provide stable switching functions to ensure the safety of the power system.
5. **High-Voltage Load Control**:
In applications where high-voltage loads need to be controlled, such as high-voltage switches and load control circuits, the high-voltage handling capability and stable switching characteristics of the **IRFI9Z34N-VB** enable it to perform well.
The high-voltage handling capability and low on-resistance of the **IRFI9Z34N-VB** enable it to perform well in applications under various high-voltage and negative voltage environments, especially for applications in negative voltage power switches and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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