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IRFI9Z34GPBF-VB Product details
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IRFI9Z34GPBF-VB MOSFET Product Introduction
IRFI9Z34GPBF-VB is a high performance single P-channel MOSFET packaged in TO220F. This MOSFET is manufactured using Trench technology and has excellent electrical performance and reliability. It is designed to handle high voltage loads, provide stable switching performance and low on-resistance, and is suitable for a variety of high power applications.
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IRFI9Z34GPBF-VB is a high performance single P-channel MOSFET packaged in TO220F. This MOSFET is manufactured using Trench technology and has excellent electrical performance and reliability. It is designed to handle high voltage loads, provide stable switching performance and low on-resistance, and is suitable for a variety of high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package**: TO220F, suitable for applications requiring high power and good heat dissipation.
- **Configuration**: Single P-channel MOSFET.
- **VDS (drain-source voltage)**: -60V, capable of handling medium voltage loads, suitable for negative voltage applications.
- **VGS (gate-source voltage)**: ±20V, supporting a wide range of gate drive voltages.
- **Vth (threshold voltage)**: -1.7V, ensuring that it can be turned on at lower gate voltages.
- **RDS(ON) (on-resistance)**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **ID (continuous leakage current)**: -20A, supporting higher current loads, suitable for high power applications.
- **Technology**: Trench technology, providing low on-resistance and high efficiency, suitable for high-performance switching applications.
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- **Package**: TO220F, suitable for applications requiring high power and good heat dissipation.
- **Configuration**: Single P-channel MOSFET.
- **VDS (drain-source voltage)**: -60V, capable of handling medium voltage loads, suitable for negative voltage applications.
- **VGS (gate-source voltage)**: ±20V, supporting a wide range of gate drive voltages.
- **Vth (threshold voltage)**: -1.7V, ensuring that it can be turned on at lower gate voltages.
- **RDS(ON) (on-resistance)**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **ID (continuous leakage current)**: -20A, supporting higher current loads, suitable for high power applications.
- **Technology**: Trench technology, providing low on-resistance and high efficiency, suitable for high-performance switching applications.
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Domain and module applications：
Application Examples
1. **Power Management System**:
In **Power Management System**, the high current capability and low on-resistance of IRFI9Z34GPBF-VB make it an ideal choice for high-efficiency power switches. Its -60V drain-source voltage capability is suitable for power modules that require medium voltage handling.
2. **Electric Vehicle Battery Management**:
In **Electric Vehicle Battery Management** applications, this MOSFET can be used as a high-side switch for the battery. Its low on-resistance and high drain-source voltage can effectively manage the battery's charging and discharging process, providing reliable performance.
3. **DC-DC Converter**:
In **DC-DC Converter**, IRFI9Z34GPBF-VB can be used in the switch control section to handle medium voltage and current loads. Its low on-resistance brought by Trench technology helps improve the overall efficiency of the converter.
4. **Power Switch Module**:
In **Power Switch Module**, this MOSFET is capable of handling high current loads, and its -60V drain-source voltage makes it suitable for multiple power switch applications. Especially in situations where efficient switching and low conduction losses are required, this MOSFET can provide reliable performance.
5. **Audio Power Amplifier**:
In **Audio Power Amplifier**, IRFI9Z34GPBF-VB can be used as a high-side switch to manage power output. Its low on-resistance and high current capability can effectively improve the performance and efficiency of audio amplifiers.
The design of IRFI9Z34GPBF-VB makes it suitable for multiple fields such as power management, electric vehicle battery management, DC-DC converters, power switch modules, and audio power amplifiers, and can provide excellent performance and stability in different applications.
1. **Power Management System**:
In **Power Management System**, the high current capability and low on-resistance of IRFI9Z34GPBF-VB make it an ideal choice for high-efficiency power switches. Its -60V drain-source voltage capability is suitable for power modules that require medium voltage handling.
2. **Electric Vehicle Battery Management**:
In **Electric Vehicle Battery Management** applications, this MOSFET can be used as a high-side switch for the battery. Its low on-resistance and high drain-source voltage can effectively manage the battery's charging and discharging process, providing reliable performance.
3. **DC-DC Converter**:
In **DC-DC Converter**, IRFI9Z34GPBF-VB can be used in the switch control section to handle medium voltage and current loads. Its low on-resistance brought by Trench technology helps improve the overall efficiency of the converter.
4. **Power Switch Module**:
In **Power Switch Module**, this MOSFET is capable of handling high current loads, and its -60V drain-source voltage makes it suitable for multiple power switch applications. Especially in situations where efficient switching and low conduction losses are required, this MOSFET can provide reliable performance.
5. **Audio Power Amplifier**:
In **Audio Power Amplifier**, IRFI9Z34GPBF-VB can be used as a high-side switch to manage power output. Its low on-resistance and high current capability can effectively improve the performance and efficiency of audio amplifiers.
The design of IRFI9Z34GPBF-VB makes it suitable for multiple fields such as power management, electric vehicle battery management, DC-DC converters, power switch modules, and audio power amplifiers, and can provide excellent performance and stability in different applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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