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IRFI9Z24GPBF-VB Product details
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1. IRFI9Z24GPBF-VB Product Introduction
IRFI9Z24GPBF-VB is a high-performance P-channel power MOSFET in TO220F package. This MOSFET is designed for low-voltage and high-current applications, with a maximum drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -20A. Its gate threshold voltage (Vth) is -1.7V, allowing it to be effectively turned on at a lower gate-source voltage. IRFI9Z24GPBF-VB has good on-resistance performance, with an RDS(ON) of 100mΩ at VGS = 10V, and uses Trench technology to provide excellent switching performance and current handling capabilities.
IRFI9Z24GPBF-VB is a high-performance P-channel power MOSFET in TO220F package. This MOSFET is designed for low-voltage and high-current applications, with a maximum drain-source voltage (VDS) of -60V and a maximum drain current (ID) of -20A. Its gate threshold voltage (Vth) is -1.7V, allowing it to be effectively turned on at a lower gate-source voltage. IRFI9Z24GPBF-VB has good on-resistance performance, with an RDS(ON) of 100mΩ at VGS = 10V, and uses Trench technology to provide excellent switching performance and current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
2. IRFI9Z24GPBF-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -20A
- **Process technology**: Trench
- **Maximum power dissipation**: 60W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F The package provides good heat dissipation characteristics
- **Package type**: TO220F
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- 120mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -20A
- **Process technology**: Trench
- **Maximum power dissipation**: 60W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F The package provides good heat dissipation characteristics
Domain and module applications：
III. Application Fields and Module Description
1. **Load Switch**: The high current capability and low on-resistance of IRFI9Z24GPBF-VB make it very suitable for use as a load switch. In the power management module, it can control the switching operation of high current loads to ensure the stability and efficiency of the system.
2. **Power Management**: In the power management system, this MOSFET can be used as a power switch to handle high current and low voltage conditions. It is suitable for DC-DC converters and power distribution circuits to provide efficient power conversion and management.
3. **Battery Protection**: Due to its high current handling capability and low on-resistance, this MOSFET can be used in battery protection circuits. In battery management systems, it can effectively protect batteries from overcurrent and overvoltage damage.
4. **Motor Drive**: In motor drive applications, IRFI9Z24GPBF-VB can be used as a switching element in motor control circuits. Its high current capability and excellent switching performance are suitable for driving motor loads and providing stable current control.
5. **Power Conversion Module**: In power conversion modules, this MOSFET can be used for high current switching operations, ensuring efficient power conversion and energy management. It is suitable for applications that require high current and low resistance switching, such as inverters and power modules.
6. **High Current Switch**: The low on-resistance and high current handling capability of this MOSFET make it suitable for a variety of high current switching applications. It can provide reliable performance in circuits that require low power consumption and efficient switching.
The design of IRFI9Z24GPBF-VB makes it excel in applications that handle high current and low voltage, and is suitable for a variety of electronic circuits that require high current and low on-resistance.
1. **Load Switch**: The high current capability and low on-resistance of IRFI9Z24GPBF-VB make it very suitable for use as a load switch. In the power management module, it can control the switching operation of high current loads to ensure the stability and efficiency of the system.
2. **Power Management**: In the power management system, this MOSFET can be used as a power switch to handle high current and low voltage conditions. It is suitable for DC-DC converters and power distribution circuits to provide efficient power conversion and management.
3. **Battery Protection**: Due to its high current handling capability and low on-resistance, this MOSFET can be used in battery protection circuits. In battery management systems, it can effectively protect batteries from overcurrent and overvoltage damage.
4. **Motor Drive**: In motor drive applications, IRFI9Z24GPBF-VB can be used as a switching element in motor control circuits. Its high current capability and excellent switching performance are suitable for driving motor loads and providing stable current control.
5. **Power Conversion Module**: In power conversion modules, this MOSFET can be used for high current switching operations, ensuring efficient power conversion and energy management. It is suitable for applications that require high current and low resistance switching, such as inverters and power modules.
6. **High Current Switch**: The low on-resistance and high current handling capability of this MOSFET make it suitable for a variety of high current switching applications. It can provide reliable performance in circuits that require low power consumption and efficient switching.
The design of IRFI9Z24GPBF-VB makes it excel in applications that handle high current and low voltage, and is suitable for a variety of electronic circuits that require high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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