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IRFI9620GPBF-VB Product details
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IRFI9620GPBF-VB Product Introduction
IRFI9620GPBF-VB is a high voltage single P-channel power MOSFET packaged in **TO220F** and designed with **Trench** technology. The drain-source voltage (VDS) of this MOSFET is as high as **-200V**, suitable for applications requiring high negative voltage. Its gate-source voltage (VGS) range is ±20V, capable of handling drain currents up to **-3.6A** and providing **2000mΩ** on-resistance at VGS=10V. IRFI9620GPBF-VB is particularly suitable for use as a load switch or power management component in high voltage environments.
IRFI9620GPBF-VB is a high voltage single P-channel power MOSFET packaged in **TO220F** and designed with **Trench** technology. The drain-source voltage (VDS) of this MOSFET is as high as **-200V**, suitable for applications requiring high negative voltage. Its gate-source voltage (VGS) range is ±20V, capable of handling drain currents up to **-3.6A** and providing **2000mΩ** on-resistance at VGS=10V. IRFI9620GPBF-VB is particularly suitable for use as a load switch or power management component in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
1. **Package**: TO220F
This MOSFET uses a TO220F package, which provides good heat dissipation and is suitable for high-power application environments.
2. **Configuration**: Single P-channel
P-channel MOSFETs are mainly used for negative power switching and reverse control of current flow. Compared with N-channel MOSFETs, they have higher stability in high voltage environments.
3. **Drain-source voltage (VDS)**: -200V
The high negative voltage capability is suitable for handling a drain-source voltage of -200V, enabling it to work stably in high-voltage load switching applications.
4. **Gate-source voltage (VGS)**: ±20V
A wide range of gate-source voltages is provided, making it suitable for various gate drive circuit designs.
5. **Threshold Voltage (Vth)**: -2V
Low threshold voltage ensures that the MOSFET turns on at a lower gate-source voltage, improving switching performance and efficiency.
6. **On-resistance (RDS(ON))**:
- **2400mΩ @ VGS=4.5V**
- **2000mΩ @ VGS=10V**
High on-resistance is suitable for low current applications and provides stable electrical performance in high voltage environments.
7. **Maximum Drain Current (ID)**: -3.6A
Suitable for handling medium current loads under high voltage, capable of withstanding drain currents up to -3.6A.
8. **Technology**: Trench
Trench technology is used to provide high voltage tolerance, suitable for applications that require high voltage handling.
1. **Package**: TO220F
This MOSFET uses a TO220F package, which provides good heat dissipation and is suitable for high-power application environments.
2. **Configuration**: Single P-channel
P-channel MOSFETs are mainly used for negative power switching and reverse control of current flow. Compared with N-channel MOSFETs, they have higher stability in high voltage environments.
3. **Drain-source voltage (VDS)**: -200V
The high negative voltage capability is suitable for handling a drain-source voltage of -200V, enabling it to work stably in high-voltage load switching applications.
4. **Gate-source voltage (VGS)**: ±20V
A wide range of gate-source voltages is provided, making it suitable for various gate drive circuit designs.
5. **Threshold Voltage (Vth)**: -2V
Low threshold voltage ensures that the MOSFET turns on at a lower gate-source voltage, improving switching performance and efficiency.
6. **On-resistance (RDS(ON))**:
- **2400mΩ @ VGS=4.5V**
- **2000mΩ @ VGS=10V**
High on-resistance is suitable for low current applications and provides stable electrical performance in high voltage environments.
7. **Maximum Drain Current (ID)**: -3.6A
Suitable for handling medium current loads under high voltage, capable of withstanding drain currents up to -3.6A.
8. **Technology**: Trench
Trench technology is used to provide high voltage tolerance, suitable for applications that require high voltage handling.
Domain and module applications：
Applications and module examples
1. **High voltage load switch**
IRFI9620GPBF-VB can be used in **high voltage load switch** applications. Its -200V drain-source voltage is suitable for use in load switches that require high negative voltages, and can stably control high voltage loads.
2. **Power management system**
In **power management systems**, this MOSFET provides good switching performance and high voltage capabilities, suitable for use as a power switch or power conditioning component to ensure stable system operation.
3. **High voltage motor drive**
This MOSFET can be used in **high voltage motor drive** circuits, especially in high voltage motor drive systems that require negative power switches, providing stable switching performance and current control.
4. **Power inverter**
In **power inverter**, IRFI9620GPBF-VB is suitable for switch control in high voltage environments, capable of handling high negative voltages, thereby improving the efficiency and reliability of the inverter.
5. **High voltage lighting control**
In **high voltage lighting control systems**, this MOSFET is used for switching control of high voltage lighting equipment, providing high voltage tolerance and reliable switching performance.
IRFI9620GPBF-VB is widely used in high voltage load switches, power management systems, high voltage motor drives, power inverters and high voltage lighting control with its high voltage tolerance, moderate on-resistance and stable switching performance.
1. **High voltage load switch**
IRFI9620GPBF-VB can be used in **high voltage load switch** applications. Its -200V drain-source voltage is suitable for use in load switches that require high negative voltages, and can stably control high voltage loads.
2. **Power management system**
In **power management systems**, this MOSFET provides good switching performance and high voltage capabilities, suitable for use as a power switch or power conditioning component to ensure stable system operation.
3. **High voltage motor drive**
This MOSFET can be used in **high voltage motor drive** circuits, especially in high voltage motor drive systems that require negative power switches, providing stable switching performance and current control.
4. **Power inverter**
In **power inverter**, IRFI9620GPBF-VB is suitable for switch control in high voltage environments, capable of handling high negative voltages, thereby improving the efficiency and reliability of the inverter.
5. **High voltage lighting control**
In **high voltage lighting control systems**, this MOSFET is used for switching control of high voltage lighting equipment, providing high voltage tolerance and reliable switching performance.
IRFI9620GPBF-VB is widely used in high voltage load switches, power management systems, high voltage motor drives, power inverters and high voltage lighting control with its high voltage tolerance, moderate on-resistance and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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