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IRFI9610GPBF-VB Product details
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IRFI9610GPBF-VB Product Introduction
**IRFI9610GPBF-VB** is a unipolar P-channel MOSFET in a **TO220F** package, designed for high voltage and low on-resistance applications. The maximum drain-source voltage of this MOSFET is -200V, suitable for circuits requiring high voltage and load switching control. Its channel on-resistance is 2400mΩ (VGS = 4.5V) and 2000mΩ (VGS = 10V), respectively, providing effective current control and low power consumption performance. The use of Trench technology makes this MOSFET have excellent switching characteristics and high reliability, suitable for various high voltage application scenarios.
**IRFI9610GPBF-VB** is a unipolar P-channel MOSFET in a **TO220F** package, designed for high voltage and low on-resistance applications. The maximum drain-source voltage of this MOSFET is -200V, suitable for circuits requiring high voltage and load switching control. Its channel on-resistance is 2400mΩ (VGS = 4.5V) and 2000mΩ (VGS = 10V), respectively, providing effective current control and low power consumption performance. The use of Trench technology makes this MOSFET have excellent switching characteristics and high reliability, suitable for various high voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Model**: IRFI9610GPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ (VGS = 4.5V)
- 2000mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench
- **Model**: IRFI9610GPBF-VB
- **Package**: TO220F
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ (VGS = 4.5V)
- 2000mΩ (VGS = 10V)
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **High Voltage Power Switch**: IRFI9610GPBF-VB performs well in high voltage power switch applications. Due to its high voltage withstand capability and low on-resistance, this MOSFET can be used as a switch for high voltage power supplies, providing stable current control and low power consumption, suitable for high voltage power supply systems and power protection circuits.
2. **Inverter**: In high voltage inverters, IRFI9610GPBF-VB is able to stably handle the negative voltage conversion process. Its low on-resistance and high voltage withstand make it suitable for high voltage DC to AC conversion, improving the efficiency and reliability of the inverter.
3. **Power Switch Module**: In various power switch modules, such as battery management systems and load switch circuits, the high voltage handling capability and low on-resistance of IRFI9610GPBF-VB ensure efficient switch control, reduce energy loss and improve system performance.
4. **High Voltage Load Switch**: For applications that need to handle negative voltage loads, such as high voltage motor drives and high power battery management, the IRFI9610GPBF-VB provides a reliable switching solution. Its high voltage tolerance and excellent conduction characteristics enable it to operate stably under various high voltage load conditions.
In summary, the IRFI9610GPBF-VB is a high voltage, high power density P-channel MOSFET. Its excellent performance makes it have a wide range of application potentials in high voltage power switches, inverters, power switch modules and load switches.
1. **High Voltage Power Switch**: IRFI9610GPBF-VB performs well in high voltage power switch applications. Due to its high voltage withstand capability and low on-resistance, this MOSFET can be used as a switch for high voltage power supplies, providing stable current control and low power consumption, suitable for high voltage power supply systems and power protection circuits.
2. **Inverter**: In high voltage inverters, IRFI9610GPBF-VB is able to stably handle the negative voltage conversion process. Its low on-resistance and high voltage withstand make it suitable for high voltage DC to AC conversion, improving the efficiency and reliability of the inverter.
3. **Power Switch Module**: In various power switch modules, such as battery management systems and load switch circuits, the high voltage handling capability and low on-resistance of IRFI9610GPBF-VB ensure efficient switch control, reduce energy loss and improve system performance.
4. **High Voltage Load Switch**: For applications that need to handle negative voltage loads, such as high voltage motor drives and high power battery management, the IRFI9610GPBF-VB provides a reliable switching solution. Its high voltage tolerance and excellent conduction characteristics enable it to operate stably under various high voltage load conditions.
In summary, the IRFI9610GPBF-VB is a high voltage, high power density P-channel MOSFET. Its excellent performance makes it have a wide range of application potentials in high voltage power switches, inverters, power switch modules and load switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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