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IRFI9530GPBF-VB Product details
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IRFI9530GPBF-VB MOSFET Product Introduction:
**IRFI9530GPBF-VB** is a high-performance single P-channel MOSFET in **TO220F** package. It can handle drain-source voltages up to -100V and is suitable for circuits that require negative voltage control. The threshold voltage of this MOSFET is -2V, the on-resistance is 200mΩ (at VGS=10V), and the maximum drain current is -12A. It uses **Trench** technology, which provides good electrical characteristics and high switching speeds, and is suitable for use in a variety of high voltage and negative voltage applications.
**IRFI9530GPBF-VB** is a high-performance single P-channel MOSFET in **TO220F** package. It can handle drain-source voltages up to -100V and is suitable for circuits that require negative voltage control. The threshold voltage of this MOSFET is -2V, the on-resistance is 200mΩ (at VGS=10V), and the maximum drain current is -12A. It uses **Trench** technology, which provides good electrical characteristics and high switching speeds, and is suitable for use in a variety of high voltage and negative voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description:
- **Package**: TO220F
The TO220F package provides excellent heat dissipation and mechanical strength, suitable for applications requiring high power handling and stable mounting.
- **Configuration**: Single P-channel
The P-channel MOSFET is suitable for use as a load switch and can operate effectively in a negative voltage environment.
- **Drain-source voltage (VDS)**: -100V
The MOSFET can withstand drain-source voltages up to -100V, making it suitable for high voltage negative power supply applications.
- **Gate-source voltage (VGS)**: ±20V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: -2V
The relatively low threshold voltage allows the MOSFET to be turned on at a low gate voltage, suitable for low voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 200mΩ @ VGS = 10V
- 230mΩ @ VGS = 4.5V
Higher on-resistance at lower gate voltages, suitable for medium current applications.
- **Drainage current (ID)**: -12A
Maximum drain current is -12A, suitable for handling medium current loads.
- **Technology**: Trench
**Trench** technology provides lower on-resistance and better switching characteristics, suitable for high-performance switching applications.
- **Package**: TO220F
The TO220F package provides excellent heat dissipation and mechanical strength, suitable for applications requiring high power handling and stable mounting.
- **Configuration**: Single P-channel
The P-channel MOSFET is suitable for use as a load switch and can operate effectively in a negative voltage environment.
- **Drain-source voltage (VDS)**: -100V
The MOSFET can withstand drain-source voltages up to -100V, making it suitable for high voltage negative power supply applications.
- **Gate-source voltage (VGS)**: ±20V
Supports a wide gate-source voltage range to ensure stable operation under various control signals.
- **Threshold voltage (Vth)**: -2V
The relatively low threshold voltage allows the MOSFET to be turned on at a low gate voltage, suitable for low voltage control requirements.
- **On-state resistance (RDS(ON))**:
- 200mΩ @ VGS = 10V
- 230mΩ @ VGS = 4.5V
Higher on-resistance at lower gate voltages, suitable for medium current applications.
- **Drainage current (ID)**: -12A
Maximum drain current is -12A, suitable for handling medium current loads.
- **Technology**: Trench
**Trench** technology provides lower on-resistance and better switching characteristics, suitable for high-performance switching applications.
Domain and module applications：
Application fields and module examples:
1. **DC-DC Converters**:
**IRFI9530GPBF-VB** can be used as a load switch in DC-DC converters, especially in negative voltage conversion and reverse current control. Its high voltage handling capability ensures stable operation of the converter under negative voltage conditions.
2. **Negative Voltage Power Switches**:
Suitable for power management systems that require negative voltage switches, such as switching control of negative voltage power supplies. The high withstand voltage and negative voltage characteristics of this MOSFET make it an ideal choice for this application.
3. **Motor Drives**:
In motor drive systems, especially motor control that requires negative voltage operation, **IRFI9530GPBF-VB** can be used as a switching element to achieve motor control. Its negative voltage handling capability ensures the stability of the motor drive system.
4. **Power Protection Circuits**:
Used for switch control in power protection circuits, especially in situations where negative voltage protection is required, such as overvoltage protection or power management systems. This MOSFET can withstand high voltages and provide stable protection functions.
5. **High-Voltage Load Control**:
Suitable for circuits that need to control high-voltage loads, such as high-voltage switching and load control applications. Its high voltage tolerance and medium current handling capabilities make it excel in these applications.
**IRFI9530GPBF-VB**'s high voltage handling capability and medium current control characteristics make it perform well in various applications under high voltage and negative voltage environments, and is an indispensable component in power management and protection circuits.
1. **DC-DC Converters**:
**IRFI9530GPBF-VB** can be used as a load switch in DC-DC converters, especially in negative voltage conversion and reverse current control. Its high voltage handling capability ensures stable operation of the converter under negative voltage conditions.
2. **Negative Voltage Power Switches**:
Suitable for power management systems that require negative voltage switches, such as switching control of negative voltage power supplies. The high withstand voltage and negative voltage characteristics of this MOSFET make it an ideal choice for this application.
3. **Motor Drives**:
In motor drive systems, especially motor control that requires negative voltage operation, **IRFI9530GPBF-VB** can be used as a switching element to achieve motor control. Its negative voltage handling capability ensures the stability of the motor drive system.
4. **Power Protection Circuits**:
Used for switch control in power protection circuits, especially in situations where negative voltage protection is required, such as overvoltage protection or power management systems. This MOSFET can withstand high voltages and provide stable protection functions.
5. **High-Voltage Load Control**:
Suitable for circuits that need to control high-voltage loads, such as high-voltage switching and load control applications. Its high voltage tolerance and medium current handling capabilities make it excel in these applications.
**IRFI9530GPBF-VB**'s high voltage handling capability and medium current control characteristics make it perform well in various applications under high voltage and negative voltage environments, and is an indispensable component in power management and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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