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IRFI840GLCPBF-VB Product details
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1. IRFI840GLCPBF-VB Product Introduction
IRFI840GLCPBF-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET is designed for high voltage applications and has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 10A. Its gate threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 830mΩ at VGS = 10V. IRFI840GLCPBF-VB uses Plannar technology to provide stable performance and good voltage resistance, and is suitable for use in circuits that require high voltage processing.
IRFI840GLCPBF-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET is designed for high voltage applications and has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 10A. Its gate threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 830mΩ at VGS = 10V. IRFI840GLCPBF-VB uses Plannar technology to provide stable performance and good voltage resistance, and is suitable for use in circuits that require high voltage processing.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. IRFI840GLCPBF-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Process technology**: Plannar
- **Maximum power dissipation**: 50W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F package provides good heat dissipation characteristics
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Process technology**: Plannar
- **Maximum power dissipation**: 50W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F package provides good heat dissipation characteristics
Domain and module applications：
III. Application fields and module description
1. **High voltage power conversion**: The 650V maximum drain-source voltage of IRFI840GLCPBF-VB makes it very suitable for high voltage power conversion applications. It can be used as the main switching element in high voltage DC-DC converters, providing reliable voltage conversion and stable performance.
2. **Power management module**: In the power management module, this MOSFET can handle high voltage and provide stable switching performance. For example, in a high voltage power management system, it can be used for high voltage switching and regulating current, thereby improving the overall efficiency of the system.
3. **Motor drive**: In motor drive applications, the high voltage capability of IRFI840GLCPBF-VB enables it to cope with high voltage motor drive requirements. It can control the high voltage switching operation in the motor to ensure stable motor operation.
4. **High-voltage inverter**: In high-voltage inverters, this MOSFET can be used as a switching element in the circuit to handle high voltage input and output, thereby achieving efficient energy conversion and power management.
5. **Switching power supply**: In switching power supply design, the high voltage and higher on-resistance of IRFI840GLCPBF-VB are suitable for switching power supply applications that require high voltage handling. It is able to handle switching operations under high voltage conditions, ensuring the stability and reliability of the power supply.
6. **High-voltage protection circuit**: Due to its high voltage tolerance, this MOSFET is suitable for high-voltage protection circuits, such as overvoltage protection and circuit breakers, effectively protecting circuit components from damage under high voltage conditions.
The design of IRFI840GLCPBF-VB ensures its reliability and stability in high voltage applications, and is widely used in various power electronics applications that need to handle high voltage and high power.
1. **High voltage power conversion**: The 650V maximum drain-source voltage of IRFI840GLCPBF-VB makes it very suitable for high voltage power conversion applications. It can be used as the main switching element in high voltage DC-DC converters, providing reliable voltage conversion and stable performance.
2. **Power management module**: In the power management module, this MOSFET can handle high voltage and provide stable switching performance. For example, in a high voltage power management system, it can be used for high voltage switching and regulating current, thereby improving the overall efficiency of the system.
3. **Motor drive**: In motor drive applications, the high voltage capability of IRFI840GLCPBF-VB enables it to cope with high voltage motor drive requirements. It can control the high voltage switching operation in the motor to ensure stable motor operation.
4. **High-voltage inverter**: In high-voltage inverters, this MOSFET can be used as a switching element in the circuit to handle high voltage input and output, thereby achieving efficient energy conversion and power management.
5. **Switching power supply**: In switching power supply design, the high voltage and higher on-resistance of IRFI840GLCPBF-VB are suitable for switching power supply applications that require high voltage handling. It is able to handle switching operations under high voltage conditions, ensuring the stability and reliability of the power supply.
6. **High-voltage protection circuit**: Due to its high voltage tolerance, this MOSFET is suitable for high-voltage protection circuits, such as overvoltage protection and circuit breakers, effectively protecting circuit components from damage under high voltage conditions.
The design of IRFI840GLCPBF-VB ensures its reliability and stability in high voltage applications, and is widely used in various power electronics applications that need to handle high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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