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IRFI820GPBF-VB Product details
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IRFI820GPBF-VB Product Introduction
IRFI820GPBF-VB is a high voltage single N-channel power MOSFET packaged in **TO220F** and designed with **Plannar** technology. The drain-source voltage (VDS) of this MOSFET reaches **650V**, which is suitable for high voltage applications. Its gate-source voltage (VGS) range is ±30V, with a drain current capability of up to **2A** and provides an on-resistance of **1700mΩ** at VGS=10V. This MOSFET is ideal for use in power switching applications that require high voltage handling capabilities.
IRFI820GPBF-VB is a high voltage single N-channel power MOSFET packaged in **TO220F** and designed with **Plannar** technology. The drain-source voltage (VDS) of this MOSFET reaches **650V**, which is suitable for high voltage applications. Its gate-source voltage (VGS) range is ±30V, with a drain current capability of up to **2A** and provides an on-resistance of **1700mΩ** at VGS=10V. This MOSFET is ideal for use in power switching applications that require high voltage handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
The package design is TO220F, which provides good heat dissipation performance, suitable for high power applications, and effectively controls the operating temperature of the MOSFET.
2. **Configuration**: Single N-channel
N-channel MOSFET is commonly used in high current applications, with high electron mobility and low on-resistance, making it suitable for handling larger currents.
3. **Drain-source voltage (VDS)**: 650V
The high voltage capability enables it to handle a drain-source voltage of 650V, suitable for high voltage application environments.
4. **Gate-source voltage (VGS)**: ±30V
A wide range of gate-source voltage is provided, suitable for a variety of gate drive circuit designs.
5. **Threshold Voltage (Vth)**: 3.5V
High threshold voltage ensures that the MOSFET turns on at a higher gate-source voltage, suitable for high voltage applications.
6. **On-resistance (RDS(ON))**:
- **1700mΩ @ VGS=10V**
Relatively high on-resistance is suitable for low current applications, ensuring stable electrical performance in high voltage environments.
7. **Maximum Drain Current (ID)**: 2A
Suitable for low to medium current applications, capable of withstanding drain currents up to 2A.
8. **Technology**: Plannar
Plannar technology is used to provide high voltage tolerance and stability, suitable for applications that require high voltage handling.
1. **Package**: TO220F
The package design is TO220F, which provides good heat dissipation performance, suitable for high power applications, and effectively controls the operating temperature of the MOSFET.
2. **Configuration**: Single N-channel
N-channel MOSFET is commonly used in high current applications, with high electron mobility and low on-resistance, making it suitable for handling larger currents.
3. **Drain-source voltage (VDS)**: 650V
The high voltage capability enables it to handle a drain-source voltage of 650V, suitable for high voltage application environments.
4. **Gate-source voltage (VGS)**: ±30V
A wide range of gate-source voltage is provided, suitable for a variety of gate drive circuit designs.
5. **Threshold Voltage (Vth)**: 3.5V
High threshold voltage ensures that the MOSFET turns on at a higher gate-source voltage, suitable for high voltage applications.
6. **On-resistance (RDS(ON))**:
- **1700mΩ @ VGS=10V**
Relatively high on-resistance is suitable for low current applications, ensuring stable electrical performance in high voltage environments.
7. **Maximum Drain Current (ID)**: 2A
Suitable for low to medium current applications, capable of withstanding drain currents up to 2A.
8. **Technology**: Plannar
Plannar technology is used to provide high voltage tolerance and stability, suitable for applications that require high voltage handling.
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**
IRFI820GPBF-VB performs well in **high-voltage power switch** systems. Its 650V drain-source voltage is suitable for high-voltage power switching applications, ensuring stable operation of the system and controlling high voltage.
2. **Power management system**
In **power management systems**, especially where high voltage input is required, this MOSFET provides reliable switching performance and is suitable for power conversion and power protection circuits.
3. **Motor drive**
This MOSFET can be used in **motor drive** circuits, especially in drive systems that require high voltage but lower current. Its high voltage capability ensures stable operation of motor drive systems.
4. **Lighting control system**
In **high-voltage lighting control systems**, IRFI820GPBF-VB can be used for high-voltage switch control, suitable for power switching and dimming applications of lamps.
5. **Industrial Control**
In **Industrial Control Systems**, this MOSFET is suitable for high voltage control circuits, providing stable switching performance, contributing to the safe and efficient operation of industrial equipment.
With its high voltage tolerance, moderate on-resistance and low drain current capability, IRFI820GPBF-VB is widely used in high voltage power switches, power management, motor drives, lighting control and industrial control.
1. **High-voltage power switch**
IRFI820GPBF-VB performs well in **high-voltage power switch** systems. Its 650V drain-source voltage is suitable for high-voltage power switching applications, ensuring stable operation of the system and controlling high voltage.
2. **Power management system**
In **power management systems**, especially where high voltage input is required, this MOSFET provides reliable switching performance and is suitable for power conversion and power protection circuits.
3. **Motor drive**
This MOSFET can be used in **motor drive** circuits, especially in drive systems that require high voltage but lower current. Its high voltage capability ensures stable operation of motor drive systems.
4. **Lighting control system**
In **high-voltage lighting control systems**, IRFI820GPBF-VB can be used for high-voltage switch control, suitable for power switching and dimming applications of lamps.
5. **Industrial Control**
In **Industrial Control Systems**, this MOSFET is suitable for high voltage control circuits, providing stable switching performance, contributing to the safe and efficient operation of industrial equipment.
With its high voltage tolerance, moderate on-resistance and low drain current capability, IRFI820GPBF-VB is widely used in high voltage power switches, power management, motor drives, lighting control and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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