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IRFI720GPBF-VB Product details
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IRFI720GPBF-VB MOSFET Product Introduction:
**IRFI720GPBF-VB** is a high voltage, high current handling single N-channel MOSFET in **TO220F** package, suitable for high power and high voltage applications. Its drain-source voltage is 650V, gate-source voltage range is ±30V, and threshold voltage is 3.5V. This MOSFET uses **Plannar** technology, has an on-resistance of 2560mΩ and a maximum drain current of 4A, which is very suitable for use in applications that need to handle high voltage and medium current.
**IRFI720GPBF-VB** is a high voltage, high current handling single N-channel MOSFET in **TO220F** package, suitable for high power and high voltage applications. Its drain-source voltage is 650V, gate-source voltage range is ±30V, and threshold voltage is 3.5V. This MOSFET uses **Plannar** technology, has an on-resistance of 2560mΩ and a maximum drain current of 4A, which is very suitable for use in applications that need to handle high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package**: TO220F
The TO220F package provides excellent heat dissipation and mechanical stability, suitable for high-power applications, and can withstand higher power loads.
- **Configuration**: Single N-channel
The N-channel design is suitable for a variety of power switching and amplification applications, and can effectively control the flow of current.
- **Drain-source voltage (VDS)**: 650V
The high drain-source voltage capability enables this MOSFET to operate under high voltage loads, suitable for circuit designs that require high withstand voltage.
- **Gate-source voltage (VGS)**: ±30V
Supports a wide range of gate-source voltages and can adapt to the needs of various control signals.
- **Threshold voltage (Vth)**: 3.5V
The moderate threshold voltage enables the MOSFET to turn on at a moderate gate voltage, ensuring efficient switching performance.
- **On-state resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
The higher on-resistance is suitable for high voltage applications with low current requirements, and despite its larger resistance value, it can operate stably in high voltage situations.
- **Drainage current (ID)**: 4A
The maximum leakage current is 4A, which is suitable for applications with medium current loads.
- **Technology**: Plannar
**Plannar** technology is used to manufacture MOSFETs with high voltage tolerance, suitable for applications that handle high voltage scenarios.
- **Package**: TO220F
The TO220F package provides excellent heat dissipation and mechanical stability, suitable for high-power applications, and can withstand higher power loads.
- **Configuration**: Single N-channel
The N-channel design is suitable for a variety of power switching and amplification applications, and can effectively control the flow of current.
- **Drain-source voltage (VDS)**: 650V
The high drain-source voltage capability enables this MOSFET to operate under high voltage loads, suitable for circuit designs that require high withstand voltage.
- **Gate-source voltage (VGS)**: ±30V
Supports a wide range of gate-source voltages and can adapt to the needs of various control signals.
- **Threshold voltage (Vth)**: 3.5V
The moderate threshold voltage enables the MOSFET to turn on at a moderate gate voltage, ensuring efficient switching performance.
- **On-state resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
The higher on-resistance is suitable for high voltage applications with low current requirements, and despite its larger resistance value, it can operate stably in high voltage situations.
- **Drainage current (ID)**: 4A
The maximum leakage current is 4A, which is suitable for applications with medium current loads.
- **Technology**: Plannar
**Plannar** technology is used to manufacture MOSFETs with high voltage tolerance, suitable for applications that handle high voltage scenarios.
Domain and module applications：
Applications and module examples:
1. **High-Voltage Power Converters**:
**IRFI720GPBF-VB** is suitable for the design of high-voltage power converters, such as DC-DC converters and AC-DC converters. Its high voltage handling capability ensures stable operation in high voltage environments, while supporting a wide gate voltage range, making the control circuit more flexible.
2. **Motor Drives**:
In high-voltage motor drive systems, especially high-voltage DC motors or stepper motor drives, **IRFI720GPBF-VB** can be used as a switching element to control the start, stop and speed regulation of the motor. Its high voltage capability ensures the stability of the motor system.
3. **Power Protection Circuits**:
This MOSFET can be used in power protection circuits, such as overvoltage protection or overcurrent protection circuits. Its high drain-source voltage enables it to withstand higher transient voltages and provide reliable switching control in protection circuits.
4. **High-Voltage Relay Substitutes**:
In applications requiring high-voltage isolation and switching control, **IRFI720GPBF-VB** can be used as a replacement for traditional high-voltage relays, providing faster switching speeds and longer service life.
5. **Switching Control in Electrical Systems**:
In various electrical systems, this MOSFET can be used for high-voltage switching control, such as high-voltage switches in power distribution systems, to ensure system reliability and stability.
**IRFI720GPBF-VB**'s high voltage and medium current handling capabilities make it an ideal choice for a variety of high-voltage and medium-current applications, especially in power management and protection circuits.
1. **High-Voltage Power Converters**:
**IRFI720GPBF-VB** is suitable for the design of high-voltage power converters, such as DC-DC converters and AC-DC converters. Its high voltage handling capability ensures stable operation in high voltage environments, while supporting a wide gate voltage range, making the control circuit more flexible.
2. **Motor Drives**:
In high-voltage motor drive systems, especially high-voltage DC motors or stepper motor drives, **IRFI720GPBF-VB** can be used as a switching element to control the start, stop and speed regulation of the motor. Its high voltage capability ensures the stability of the motor system.
3. **Power Protection Circuits**:
This MOSFET can be used in power protection circuits, such as overvoltage protection or overcurrent protection circuits. Its high drain-source voltage enables it to withstand higher transient voltages and provide reliable switching control in protection circuits.
4. **High-Voltage Relay Substitutes**:
In applications requiring high-voltage isolation and switching control, **IRFI720GPBF-VB** can be used as a replacement for traditional high-voltage relays, providing faster switching speeds and longer service life.
5. **Switching Control in Electrical Systems**:
In various electrical systems, this MOSFET can be used for high-voltage switching control, such as high-voltage switches in power distribution systems, to ensure system reliability and stability.
**IRFI720GPBF-VB**'s high voltage and medium current handling capabilities make it an ideal choice for a variety of high-voltage and medium-current applications, especially in power management and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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