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IRFI710GPBF-VB Product details
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IRFI710GPBF-VB MOSFET Product Introduction
IRFI710GPBF-VB is a single N-channel MOSFET in TO220F package, suitable for high voltage switching applications. With a drain-source voltage of 650V and a leakage current capability of 4A, the device is particularly suitable for applications requiring high voltage and stable performance. Its higher on-resistance (RDS(ON)=2560mΩ@VGS=10V) and Plannar technology make this MOSFET suitable for some applications that do not require so high switching frequency and efficiency, but still provide reliable performance.
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IRFI710GPBF-VB is a single N-channel MOSFET in TO220F package, suitable for high voltage switching applications. With a drain-source voltage of 650V and a leakage current capability of 4A, the device is particularly suitable for applications requiring high voltage and stable performance. Its higher on-resistance (RDS(ON)=2560mΩ@VGS=10V) and Plannar technology make this MOSFET suitable for some applications that do not require so high switching frequency and efficiency, but still provide reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F, suitable for high power and high current applications, providing good heat dissipation.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 650V, capable of withstanding high voltage switching operations, suitable for high voltage power supplies and load control.
- **VGS (gate-source voltage)**: ±30V, supports a wide range of gate drive voltages, providing flexible drive options.
- **Vth (threshold voltage)**: 3.5V, provides a moderate threshold voltage to ensure stable conduction at standard gate voltages.
- **RDS(ON) (on-resistance)**: 2560mΩ @ VGS=10V, relatively high on-resistance is suitable for applications that do not require very high efficiency.
- **ID (continuous leakage current)**: 4A, supports medium current loads, suitable for applications that do not require extremely high current handling capabilities.
- **Technology**: Plannar technology, suitable for higher voltage and medium current applications, providing stable performance.
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- **Package**: TO220F, suitable for high power and high current applications, providing good heat dissipation.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 650V, capable of withstanding high voltage switching operations, suitable for high voltage power supplies and load control.
- **VGS (gate-source voltage)**: ±30V, supports a wide range of gate drive voltages, providing flexible drive options.
- **Vth (threshold voltage)**: 3.5V, provides a moderate threshold voltage to ensure stable conduction at standard gate voltages.
- **RDS(ON) (on-resistance)**: 2560mΩ @ VGS=10V, relatively high on-resistance is suitable for applications that do not require very high efficiency.
- **ID (continuous leakage current)**: 4A, supports medium current loads, suitable for applications that do not require extremely high current handling capabilities.
- **Technology**: Plannar technology, suitable for higher voltage and medium current applications, providing stable performance.
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Domain and module applications：
Application Examples
1. **High-voltage power switch**:
In **High-voltage power switch** applications, the 650V drain-source voltage of the IRFI710GPBF-VB enables it to safely handle high-voltage loads. Despite the higher on-resistance, its stability and reliability still meet the requirements in high-voltage switching applications.
2. **Power converter**:
This MOSFET can be used in **power converter**, such as AC-DC and DC-DC converters, especially in applications where the switching frequency is not required to be high. Its higher RDS(ON) value does not cause excessive impact on low-frequency switching and can operate stably.
3. **Motor drive**:
In **Motor drive** applications, although the on-resistance of the IRFI710GPBF-VB is higher, its high voltage capability can be used in some application scenarios with higher motor voltages. Especially those motor control systems that do not require high-frequency switching.
4. **Inverter**:
In **Inverter** applications, the IRFI710GPBF-VB can handle higher voltages and provide reliable switching performance without requiring extremely high efficiency. Suitable for medium-power inverter modules.
5. **Power Amplifier**:
In **Power Amplifier** applications, despite its higher on-resistance, it can still be used in some power amplifier circuits due to its high voltage tolerance, especially in situations where switching efficiency is not required.
The high voltage capability and stable performance of the IRFI710GPBF-VB enable it to play an important role in high-voltage power switches, power converters, motor drives, inverters, and power amplifiers.
1. **High-voltage power switch**:
In **High-voltage power switch** applications, the 650V drain-source voltage of the IRFI710GPBF-VB enables it to safely handle high-voltage loads. Despite the higher on-resistance, its stability and reliability still meet the requirements in high-voltage switching applications.
2. **Power converter**:
This MOSFET can be used in **power converter**, such as AC-DC and DC-DC converters, especially in applications where the switching frequency is not required to be high. Its higher RDS(ON) value does not cause excessive impact on low-frequency switching and can operate stably.
3. **Motor drive**:
In **Motor drive** applications, although the on-resistance of the IRFI710GPBF-VB is higher, its high voltage capability can be used in some application scenarios with higher motor voltages. Especially those motor control systems that do not require high-frequency switching.
4. **Inverter**:
In **Inverter** applications, the IRFI710GPBF-VB can handle higher voltages and provide reliable switching performance without requiring extremely high efficiency. Suitable for medium-power inverter modules.
5. **Power Amplifier**:
In **Power Amplifier** applications, despite its higher on-resistance, it can still be used in some power amplifier circuits due to its high voltage tolerance, especially in situations where switching efficiency is not required.
The high voltage capability and stable performance of the IRFI710GPBF-VB enable it to play an important role in high-voltage power switches, power converters, motor drives, inverters, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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