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IRFI620GPBF-VB Product details
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IRFI620GPBF-VB Product Introduction
IRFI620GPBF-VB is a high-voltage single N-channel power MOSFET packaged in **TO220F**, based on **Trench** technology, designed for high-voltage switching applications. This MOSFET has a drain-source voltage (VDS) of **200V** and a gate-source voltage (VGS) of ±20V, suitable for handling current switching requirements in medium to high voltage environments. Its on-resistance is **265mΩ** at VGS=10V, and it can support a drain current of up to **10A**. This makes the IRFI620GPBF-VB suitable for applications requiring higher voltage and current, especially in power conversion and power management systems.
IRFI620GPBF-VB is a high-voltage single N-channel power MOSFET packaged in **TO220F**, based on **Trench** technology, designed for high-voltage switching applications. This MOSFET has a drain-source voltage (VDS) of **200V** and a gate-source voltage (VGS) of ±20V, suitable for handling current switching requirements in medium to high voltage environments. Its on-resistance is **265mΩ** at VGS=10V, and it can support a drain current of up to **10A**. This makes the IRFI620GPBF-VB suitable for applications requiring higher voltage and current, especially in power conversion and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
This package design provides good heat dissipation, which helps maintain stable operating temperature and efficient current transfer in high-power applications.
2. **Configuration**: Single N-channel
N-channel MOSFETs are typically used in high-current applications, with higher electron mobility, capable of handling more current under the same conditions.
3. **Drain-source voltage (VDS)**: 200V
Suitable for high-voltage switching applications, providing stable electrical performance to cope with high-voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
A wide gate drive voltage range increases control flexibility and is suitable for a variety of drive circuit designs.
5. **Threshold voltage (Vth)**: 3V
Higher than the common threshold voltage range, ensuring that the MOSFET is turned on at a higher gate-source voltage, suitable for high-voltage and heavy-load environments.
6. **On-resistance (RDS(ON))**:
- **265mΩ @ VGS=10V**
Although the on-resistance is relatively high, it is still sufficient to handle medium current and high voltage applications and provide effective switching control.
7. **Maximum drain current (ID)**: 10A
Suitable for medium current applications, it can withstand drain currents up to 10A to meet a variety of power requirements.
8. **Technology**: Trench
Trench technology is used to reduce on-resistance and improve switching efficiency to optimize power conversion performance.
1. **Package**: TO220F
This package design provides good heat dissipation, which helps maintain stable operating temperature and efficient current transfer in high-power applications.
2. **Configuration**: Single N-channel
N-channel MOSFETs are typically used in high-current applications, with higher electron mobility, capable of handling more current under the same conditions.
3. **Drain-source voltage (VDS)**: 200V
Suitable for high-voltage switching applications, providing stable electrical performance to cope with high-voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
A wide gate drive voltage range increases control flexibility and is suitable for a variety of drive circuit designs.
5. **Threshold voltage (Vth)**: 3V
Higher than the common threshold voltage range, ensuring that the MOSFET is turned on at a higher gate-source voltage, suitable for high-voltage and heavy-load environments.
6. **On-resistance (RDS(ON))**:
- **265mΩ @ VGS=10V**
Although the on-resistance is relatively high, it is still sufficient to handle medium current and high voltage applications and provide effective switching control.
7. **Maximum drain current (ID)**: 10A
Suitable for medium current applications, it can withstand drain currents up to 10A to meet a variety of power requirements.
8. **Technology**: Trench
Trench technology is used to reduce on-resistance and improve switching efficiency to optimize power conversion performance.
Domain and module applications：
Applications and module examples
1. **High-voltage power management**
IRFI620GPBF-VB is very suitable for **high-voltage power management systems**, especially in situations where high voltage switching is required. Its high drain-source voltage and stable switching performance enable it to effectively manage power and ensure system stability.
2. **Power converter**
This MOSFET is suitable for **DC-DC converters** and **AC-DC converters**, especially in applications with high voltage input. Its high voltage withstand capability and on-resistance ensure high efficiency during the conversion process and reduce energy loss.
3. **Power amplifier**
In **power amplifier** circuits, IRFI620GPBF-VB can be used as a switching element to effectively control the delivery of power, suitable for high voltage and medium power amplification applications.
4. **Industrial control**
This device is also widely used in **industrial control systems**, especially in control circuits that need to handle high voltage and current. Its stable switching performance and high voltage tolerance can ensure the reliable operation of industrial equipment.
5. **Motor drive**
In **motor drive systems**, IRFI620GPBF-VB can effectively control the switching of motors and is suitable for medium voltage and current drive applications. Its high voltage capability ensures stable operation in high voltage environments.
IRFI620GPBF-VB is widely used in high voltage power management, power converters, power amplifiers, industrial control and motor drives with its high voltage tolerance, moderate on-resistance and good switching performance.
1. **High-voltage power management**
IRFI620GPBF-VB is very suitable for **high-voltage power management systems**, especially in situations where high voltage switching is required. Its high drain-source voltage and stable switching performance enable it to effectively manage power and ensure system stability.
2. **Power converter**
This MOSFET is suitable for **DC-DC converters** and **AC-DC converters**, especially in applications with high voltage input. Its high voltage withstand capability and on-resistance ensure high efficiency during the conversion process and reduce energy loss.
3. **Power amplifier**
In **power amplifier** circuits, IRFI620GPBF-VB can be used as a switching element to effectively control the delivery of power, suitable for high voltage and medium power amplification applications.
4. **Industrial control**
This device is also widely used in **industrial control systems**, especially in control circuits that need to handle high voltage and current. Its stable switching performance and high voltage tolerance can ensure the reliable operation of industrial equipment.
5. **Motor drive**
In **motor drive systems**, IRFI620GPBF-VB can effectively control the switching of motors and is suitable for medium voltage and current drive applications. Its high voltage capability ensures stable operation in high voltage environments.
IRFI620GPBF-VB is widely used in high voltage power management, power converters, power amplifiers, industrial control and motor drives with its high voltage tolerance, moderate on-resistance and good switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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