IRFI520NPBF-VB Product details
Product introduction:
**IRFI520NPBF-VB** is a high-performance single N-channel MOSFET in a **TO220F** package. It has a drain-source voltage (**VDS**) of 100V and a maximum drain current (**ID**) of 18A, supporting a wide range of gate drive voltages (**VGS**). It uses **Trench** technology and has a low on-resistance, making it suitable for a variety of power management and switching applications. Its rugged TO220F package provides excellent heat dissipation capabilities, making it ideal for scenarios with high power and high efficiency requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
The TO220F package is suitable for applications that require high power and high current handling capabilities. Its enhanced heat dissipation characteristics help maintain stable performance under high current conditions.
- **Configuration**: Single N-channel
This N-channel design simplifies circuit design and is widely used in power switching and power amplification applications.
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, which is suitable for applications with medium and high voltage loads, ensuring stability when handling higher voltages in the circuit.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, allowing a wide range of gate drives to ensure stable switching performance.
- **Threshold Voltage (Vth)**: 1.8V
The low threshold voltage enables the MOSFET to turn on at a lower gate voltage, suitable for low-power circuits and energy-sensitive designs.
- **On-state Resistance (RDS(ON))**:
- 86mΩ @ VGS = 10V
Low on-resistance ensures efficient current conduction, reducing power consumption and improving the energy efficiency of the system.
- **Drain Current (ID)**: 18A
The maximum leakage current is 18A, which is suitable for applications with medium and high current loads, ensuring stable operation of the device under high load conditions.
- **Technology**: Trench
Adopting **Trench** technology, it has low on-resistance and excellent switching speed, making it excel in high-frequency and high-power applications.
Domain and module applications:
1. **Power Converters**:
**IRFI520NPBF-VB** is ideal for use in DC-DC and AC-DC power converters. Its high voltage and high current capabilities enable it to efficiently convert power in a variety of power management applications while minimizing energy losses due to its low on-resistance.
2. **Motor Drives**:
In small and medium-sized motor drive systems, **IRFI520NPBF-VB** can be used to control the start and stop of the motor. Its 100V drain-source voltage and 18A current capability ensure that it can handle medium-power motor loads while maintaining high efficiency during switching.
3. **Solar Inverters**:
In solar applications, this MOSFET can be used in inverter modules. Its efficient switching capability minimizes losses when energy is transferred from solar panels to the grid, improving the overall efficiency of the system.
4. **Battery Management Systems**:
**IRFI520NPBF-VB**'s low on-resistance and high current capability make it an ideal choice for battery management systems, especially in scenarios where precise control of charging and discharging currents is required, helping to improve battery life and performance.
5. **Uninterruptible Power Supply (UPS)**:
This MOSFET can be used in uninterruptible power supply (UPS) systems to ensure stable power conversion and distribution during power outages. Its low power consumption and efficient switching characteristics can extend the battery life of UPS systems and improve conversion efficiency.
**IRFI520NPBF-VB** is widely used in power management, energy conversion, and medium and high power industrial and consumer electronic devices with its high voltage and high current handling capabilities.
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