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IRFI510GPBF-VB Product details
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IRFI510GPBF-VB MOSFET Product Introduction
IRFI510GPBF-VB is a single N-channel MOSFET in TO220F package, suitable for a variety of high voltage and high power applications. The device has a drain-source voltage of 100V and a leakage current capability of up to 18A, suitable for high-efficiency switching operation. Its low on-resistance (RDS(ON)=86mΩ@VGS=10V) ensures low power consumption and high efficiency. IRFI510GPBF-VB uses Trench technology to optimize switching performance and current handling capabilities, and can play an important role in power management and high-frequency switching applications.
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IRFI510GPBF-VB is a single N-channel MOSFET in TO220F package, suitable for a variety of high voltage and high power applications. The device has a drain-source voltage of 100V and a leakage current capability of up to 18A, suitable for high-efficiency switching operation. Its low on-resistance (RDS(ON)=86mΩ@VGS=10V) ensures low power consumption and high efficiency. IRFI510GPBF-VB uses Trench technology to optimize switching performance and current handling capabilities, and can play an important role in power management and high-frequency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F, suitable for high-power, high-current applications, and provides good heat dissipation performance.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 100V, suitable for high-voltage switching and load control.
- **VGS (gate-source voltage)**: ±20V, supports a wider gate drive voltage range.
- **Vth (threshold voltage)**: 1.8V, the lower threshold voltage enables the MOSFET to turn on at a lower gate voltage, improving efficiency.
- **RDS(ON) (on-resistance)**:
- 86mΩ @ VGS=10V, the on-resistance is low, which can reduce conduction losses and improve system efficiency.
- **ID (continuous leakage current)**: 18A, supports high current loads, suitable for high-power applications.
- **Technology**: Trench technology optimizes conduction performance and switching speed, suitable for efficient switching operation.
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- **Package**: TO220F, suitable for high-power, high-current applications, and provides good heat dissipation performance.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 100V, suitable for high-voltage switching and load control.
- **VGS (gate-source voltage)**: ±20V, supports a wider gate drive voltage range.
- **Vth (threshold voltage)**: 1.8V, the lower threshold voltage enables the MOSFET to turn on at a lower gate voltage, improving efficiency.
- **RDS(ON) (on-resistance)**:
- 86mΩ @ VGS=10V, the on-resistance is low, which can reduce conduction losses and improve system efficiency.
- **ID (continuous leakage current)**: 18A, supports high current loads, suitable for high-power applications.
- **Technology**: Trench technology optimizes conduction performance and switching speed, suitable for efficient switching operation.
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Domain and module applications：
Application Examples
1. **Motor Drive**:
In **Motor Drive** applications, the high current handling capability and low on-resistance of the IRFI510GPBF-VB enable it to efficiently drive medium-power motors. This MOSFET provides fast and reliable switching when the motor starts and stops, and is suitable for motor control modules in industrial automation and home appliances.
2. **DC-DC Converter**:
The IRFI510GPBF-VB is ideal for **DC-DC converters**, especially in medium power density converters. Due to its low on-resistance and efficient switching characteristics, this MOSFET can reduce power consumption during the conversion process and improve the energy conversion efficiency of the system.
3. **Power Management**:
This device can be used for switching operations in **Power Management Systems**, such as AC-DC and DC-DC power modules. Its high voltage and high current handling capabilities enable efficient switching in power regulation, ensuring stable system operation and improving overall efficiency.
4. **High-frequency switching circuits**:
In **high-frequency switching circuits**, the Trench technology of IRFI510GPBF-VB ensures fast switching speeds and low switching losses, making it suitable for high-frequency operation scenarios such as high-frequency DC-DC converters and voltage regulator modules.
5. **Power tools**:
In **power tools**, IRFI510GPBF-VB can support the motor control module of power tools due to its high current handling capability and efficient switching performance, providing reliable power output and stable performance for the tools.
IRFI510GPBF-VB is suitable for power management, motor drive, DC-DC converters, high-frequency switching circuits and power control modules of power tools. Its low power consumption and efficient switching performance enable it to perform well in these applications.
1. **Motor Drive**:
In **Motor Drive** applications, the high current handling capability and low on-resistance of the IRFI510GPBF-VB enable it to efficiently drive medium-power motors. This MOSFET provides fast and reliable switching when the motor starts and stops, and is suitable for motor control modules in industrial automation and home appliances.
2. **DC-DC Converter**:
The IRFI510GPBF-VB is ideal for **DC-DC converters**, especially in medium power density converters. Due to its low on-resistance and efficient switching characteristics, this MOSFET can reduce power consumption during the conversion process and improve the energy conversion efficiency of the system.
3. **Power Management**:
This device can be used for switching operations in **Power Management Systems**, such as AC-DC and DC-DC power modules. Its high voltage and high current handling capabilities enable efficient switching in power regulation, ensuring stable system operation and improving overall efficiency.
4. **High-frequency switching circuits**:
In **high-frequency switching circuits**, the Trench technology of IRFI510GPBF-VB ensures fast switching speeds and low switching losses, making it suitable for high-frequency operation scenarios such as high-frequency DC-DC converters and voltage regulator modules.
5. **Power tools**:
In **power tools**, IRFI510GPBF-VB can support the motor control module of power tools due to its high current handling capability and efficient switching performance, providing reliable power output and stable performance for the tools.
IRFI510GPBF-VB is suitable for power management, motor drive, DC-DC converters, high-frequency switching circuits and power control modules of power tools. Its low power consumption and efficient switching performance enable it to perform well in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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