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IRFI4229PBF-VB Product details
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IRFI4229PBF-VB Product Introduction
IRFI4229PBF-VB is a high-performance single N-channel power MOSFET in a **TO220F** package based on **Trench** technology, designed for high-voltage, high-current switching applications. It has a **250V** drain-source voltage (VDS) and a ±20V gate-source voltage (VGS), enabling it to handle current switching in various high-voltage environments. The device has an on-resistance of only **40mΩ** at VGS=10V and can support drain currents of up to **40A**, making it an ideal choice for high-efficiency, high-reliability applications, suitable for various power conversion and power management systems.
IRFI4229PBF-VB is a high-performance single N-channel power MOSFET in a **TO220F** package based on **Trench** technology, designed for high-voltage, high-current switching applications. It has a **250V** drain-source voltage (VDS) and a ±20V gate-source voltage (VGS), enabling it to handle current switching in various high-voltage environments. The device has an on-resistance of only **40mΩ** at VGS=10V and can support drain currents of up to **40A**, making it an ideal choice for high-efficiency, high-reliability applications, suitable for various power conversion and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
This package provides excellent heat dissipation and can support high power density applications, while its insulation design improves the reliability of electrical isolation.
2. **Configuration**: Single N-channel
N-channel MOSFETs have higher electron mobility and can handle larger currents than P-channel devices under the same conditions.
3. **Drain-source voltage (VDS)**: 250V
Suitable for switching and power management applications that handle high voltages, providing stable electrical performance.
4. **Gate-source voltage (VGS)**: ±20V
This voltage range allows a wide range of gate drive voltage designs and improves control flexibility.
5. **Threshold voltage (Vth)**: 3.5V
The relatively high threshold voltage ensures that the MOSFET is turned on at a higher gate-source voltage, suitable for high voltage and heavy load environments.
6. **On-resistance (RDS(ON)）**:
- **40mΩ @ VGS=10V**
Low on-resistance helps reduce power consumption and improve energy efficiency, especially for high current applications.
7. **Maximum drain current (ID)**: 40A
Able to withstand currents up to 40A, suitable for power management and drive applications with high power requirements.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and higher switching efficiency, which can optimize the performance of high power conversion.
1. **Package**: TO220F
This package provides excellent heat dissipation and can support high power density applications, while its insulation design improves the reliability of electrical isolation.
2. **Configuration**: Single N-channel
N-channel MOSFETs have higher electron mobility and can handle larger currents than P-channel devices under the same conditions.
3. **Drain-source voltage (VDS)**: 250V
Suitable for switching and power management applications that handle high voltages, providing stable electrical performance.
4. **Gate-source voltage (VGS)**: ±20V
This voltage range allows a wide range of gate drive voltage designs and improves control flexibility.
5. **Threshold voltage (Vth)**: 3.5V
The relatively high threshold voltage ensures that the MOSFET is turned on at a higher gate-source voltage, suitable for high voltage and heavy load environments.
6. **On-resistance (RDS(ON)）**:
- **40mΩ @ VGS=10V**
Low on-resistance helps reduce power consumption and improve energy efficiency, especially for high current applications.
7. **Maximum drain current (ID)**: 40A
Able to withstand currents up to 40A, suitable for power management and drive applications with high power requirements.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and higher switching efficiency, which can optimize the performance of high power conversion.
Domain and module applications：
Applications and module examples
1. **Motor control and drive**
IRFI4229PBF-VB is very suitable for **industrial motor drive systems**, especially in situations where high voltage and high current are required. It can effectively control and regulate the operation of the motor and reduce switching losses, thereby improving the efficiency and reliability of the system.
2. **Power converter**
This MOSFET is suitable for **DC-DC converters** and **AC-DC converters**, especially in applications with high voltage input. Its low on-resistance makes it have low losses during high-power power conversion, which can effectively improve energy efficiency.
3. **Solar inverter**
In **solar inverter**, IRFI4229PBF-VB is used to convert DC power generated by solar panels into AC power. Its high voltage tolerance enables it to perform well when handling high voltage input while ensuring efficient energy conversion.
4. **UPS (Uninterruptible Power Supply) System**
This device has important applications in **UPS systems**, especially modules with high power and high current requirements. Its high current capability and low on-resistance ensure efficient delivery of power in scenarios where continuous power is required.
5. **Lighting System**
In **high-voltage LED drive circuits**, the IRFI4229PBF-VB can be used as a switching element to effectively manage current, ensure stable operation of LEDs, and improve lighting efficiency.
With its high voltage tolerance, low on-resistance, and high current handling capability, the IRFI4229PBF-VB is widely used in industrial drives, power management, solar power systems, and other electronic fields that require high efficiency.
1. **Motor control and drive**
IRFI4229PBF-VB is very suitable for **industrial motor drive systems**, especially in situations where high voltage and high current are required. It can effectively control and regulate the operation of the motor and reduce switching losses, thereby improving the efficiency and reliability of the system.
2. **Power converter**
This MOSFET is suitable for **DC-DC converters** and **AC-DC converters**, especially in applications with high voltage input. Its low on-resistance makes it have low losses during high-power power conversion, which can effectively improve energy efficiency.
3. **Solar inverter**
In **solar inverter**, IRFI4229PBF-VB is used to convert DC power generated by solar panels into AC power. Its high voltage tolerance enables it to perform well when handling high voltage input while ensuring efficient energy conversion.
4. **UPS (Uninterruptible Power Supply) System**
This device has important applications in **UPS systems**, especially modules with high power and high current requirements. Its high current capability and low on-resistance ensure efficient delivery of power in scenarios where continuous power is required.
5. **Lighting System**
In **high-voltage LED drive circuits**, the IRFI4229PBF-VB can be used as a switching element to effectively manage current, ensure stable operation of LEDs, and improve lighting efficiency.
With its high voltage tolerance, low on-resistance, and high current handling capability, the IRFI4229PBF-VB is widely used in industrial drives, power management, solar power systems, and other electronic fields that require high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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