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IRFI2807PBF-VB Product details
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IRFI2807PBF-VB MOSFET Product Introduction
IRFI2807PBF-VB is a high performance single N-channel MOSFET in TO220F package. It is designed for high voltage and high current applications with excellent switching performance and low on-resistance. With a maximum drain-source voltage of 100V and a gate-source voltage range of ±20V, this MOSFET is suitable for use in high power and high frequency applications. IRFI2807PBF-VB uses Trench technology, which can provide efficient conduction performance at a lower gate voltage. It performs well in power switches, DC-DC converters, and other high current applications.
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IRFI2807PBF-VB is a high performance single N-channel MOSFET in TO220F package. It is designed for high voltage and high current applications with excellent switching performance and low on-resistance. With a maximum drain-source voltage of 100V and a gate-source voltage range of ±20V, this MOSFET is suitable for use in high power and high frequency applications. IRFI2807PBF-VB uses Trench technology, which can provide efficient conduction performance at a lower gate voltage. It performs well in power switches, DC-DC converters, and other high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F, the package design provides good heat dissipation performance and is suitable for applications with higher power.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 100V, supports high voltage applications, suitable for switching control of high voltage loads.
- **VGS (gate-source voltage)**: ±20V, wide gate voltage range, suitable for various drive circuits.
- **Vth (threshold voltage)**: 2.5V, low threshold voltage ensures that the MOSFET is turned on at a lower gate voltage, improving switching efficiency.
- **RDS(ON) (on-resistance)**:
- 9mΩ @ VGS=10V, low on-resistance reduces power consumption and heat generation, improving the overall efficiency of the system.
- **ID (continuous leakage current)**: 90A, capable of handling high current loads, suitable for high power applications.
- **Technology**: Trench technology optimizes switching speed and on-resistance, suitable for high frequency and high current applications.
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- **Package**: TO220F, the package design provides good heat dissipation performance and is suitable for applications with higher power.
- **Configuration**: Single N-channel MOSFET.
- **VDS (drain-source voltage)**: 100V, supports high voltage applications, suitable for switching control of high voltage loads.
- **VGS (gate-source voltage)**: ±20V, wide gate voltage range, suitable for various drive circuits.
- **Vth (threshold voltage)**: 2.5V, low threshold voltage ensures that the MOSFET is turned on at a lower gate voltage, improving switching efficiency.
- **RDS(ON) (on-resistance)**:
- 9mΩ @ VGS=10V, low on-resistance reduces power consumption and heat generation, improving the overall efficiency of the system.
- **ID (continuous leakage current)**: 90A, capable of handling high current loads, suitable for high power applications.
- **Technology**: Trench technology optimizes switching speed and on-resistance, suitable for high frequency and high current applications.
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Domain and module applications：
Application Examples
1. **Power Management**:
In **Power Management** systems, the IRFI2807PBF-VB can be used as an efficient power switch. Its low on-resistance and high current handling capability make it suitable for use in power conversion modules and battery management systems, helping to improve the overall efficiency of the system and reduce energy loss.
2. **DC-DC Converter**:
In **DC-DC Converter** applications, the low on-resistance of the IRFI2807PBF-VB can significantly improve conversion efficiency and reduce power consumption. It is suitable for a variety of high power density converters, such as computer power supplies, battery-powered devices, etc., to ensure efficient power conversion.
3. **Electric Vehicle**:
For **Electric Vehicle**, this MOSFET can be used in Battery Management System (BMS) and motor drive control. Its high current capability and low power consumption ensure efficient battery charging and discharging and reliable motor driving, thereby improving the performance and endurance of electric vehicles.
4. **Power Switch**:
In **power switch** applications, such as motor drive, high power LED driver, etc., the high current handling capability and low on-resistance of IRFI2807PBF-VB provide stable switching performance, ensuring the reliability and efficiency of load switching.
5. **High frequency switching circuit**:
In **high frequency switching circuit**, the excellent switching characteristics and low on-resistance of IRFI2807PBF-VB can effectively improve switching efficiency and reduce power consumption, suitable for high frequency converters and high power RF applications.
The high current handling capability and low on-resistance of IRFI2807PBF-VB MOSFET make it excellent in power management, DC-DC converters, electric vehicle power control, power switching and high frequency switching circuits, and is an ideal choice for high efficiency and high performance applications.
1. **Power Management**:
In **Power Management** systems, the IRFI2807PBF-VB can be used as an efficient power switch. Its low on-resistance and high current handling capability make it suitable for use in power conversion modules and battery management systems, helping to improve the overall efficiency of the system and reduce energy loss.
2. **DC-DC Converter**:
In **DC-DC Converter** applications, the low on-resistance of the IRFI2807PBF-VB can significantly improve conversion efficiency and reduce power consumption. It is suitable for a variety of high power density converters, such as computer power supplies, battery-powered devices, etc., to ensure efficient power conversion.
3. **Electric Vehicle**:
For **Electric Vehicle**, this MOSFET can be used in Battery Management System (BMS) and motor drive control. Its high current capability and low power consumption ensure efficient battery charging and discharging and reliable motor driving, thereby improving the performance and endurance of electric vehicles.
4. **Power Switch**:
In **power switch** applications, such as motor drive, high power LED driver, etc., the high current handling capability and low on-resistance of IRFI2807PBF-VB provide stable switching performance, ensuring the reliability and efficiency of load switching.
5. **High frequency switching circuit**:
In **high frequency switching circuit**, the excellent switching characteristics and low on-resistance of IRFI2807PBF-VB can effectively improve switching efficiency and reduce power consumption, suitable for high frequency converters and high power RF applications.
The high current handling capability and low on-resistance of IRFI2807PBF-VB MOSFET make it excellent in power management, DC-DC converters, electric vehicle power control, power switching and high frequency switching circuits, and is an ideal choice for high efficiency and high performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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