IRFI1010NPBF-VB Product details
Product introduction:
IRFI1010NPBF-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high-efficiency power switching applications. It can withstand drain-source voltage (VDS) up to 60V and supports gate-source voltage (VGS) of ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 2.5V, and the drain current (ID) is up to 70A. IRFI1010NPBF-VB uses Trench technology and has low on-resistance (RDS(ON) is 12mΩ @ VGS=4.5V and 10mΩ @ VGS=10V), which is suitable for use in high current and high efficiency application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: IRFI1010NPBF-VB
- **Package type**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications:
1. **Power management systems**: The low on-resistance and high current handling capability of the IRFI1010NPBF-VB make it ideal for high-efficiency power switches in power management systems, such as DC-DC converters. Its high efficiency reduces power loss and improves the efficiency of power conversion, making it suitable for use in power systems that require stability and high efficiency.
2. **Electric vehicle power**: In the power management and drive systems of electric vehicles, this MOSFET is capable of handling high current loads and is suitable for optimizing the battery charging and discharging process. Its low RDS(ON) helps improve the energy efficiency of electric vehicles and ensures reliable operation under high load conditions.
3. **Power amplifier**: The IRFI1010NPBF-VB is suitable for power amplifier applications such as audio amplifiers and RF amplifiers. Its low on-resistance reduces power loss and improves signal transmission efficiency, making it particularly suitable for application scenarios with strict requirements on power and thermal management.
4. **Motor Drive Control**: This MOSFET performs well in motor drive control systems, efficiently handling the start, run, and stop operations of the motor. Its high current carrying capability and low on-resistance ensure the stability and reliability of the motor system.
5. **LED Drive Circuit**: The low RDS(ON) and high current handling capability of the IRFI1010NPBF-VB make it suitable for LED drive circuits. It can provide high efficiency and high brightness in high-brightness LED lighting applications, suitable for LED lighting solutions that require efficient power conversion.
With its superior on-resistance and high current handling capability, the IRFI1010NPBF-VB is suitable for a variety of high-efficiency power switching applications, including power management, electric vehicles, motor drives, power amplifiers, and LED driver modules.
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