中文
English
IRFI1010GPBF-VB Product details
Back to previous pageProduct introduction：
IRFI1010GPBF-VB MOSFET Product Introduction
IRFI1010GPBF-VB is a high-performance single N-channel MOSFET in a **TO220F** package. This MOSFET is manufactured using **Trench** technology and has a **60V** drain-source voltage (VDS) and a ±20V gate-source voltage (VGS). Its low on-resistance (RDS(ON)) is **10mΩ** (at VGS=10V) and can handle a **70A** maximum drain current. The IRFI1010GPBF-VB is designed to provide efficient power switching performance and is suitable for use in a variety of high current and high power applications.
IRFI1010GPBF-VB is a high-performance single N-channel MOSFET in a **TO220F** package. This MOSFET is manufactured using **Trench** technology and has a **60V** drain-source voltage (VDS) and a ±20V gate-source voltage (VGS). Its low on-resistance (RDS(ON)) is **10mΩ** (at VGS=10V) and can handle a **70A** maximum drain current. The IRFI1010GPBF-VB is designed to provide efficient power switching performance and is suitable for use in a variety of high current and high power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
The TO220F package has excellent heat dissipation performance and good electrical connection characteristics, suitable for application scenarios requiring higher power and heat dissipation capabilities.
2. **Configuration**: Single N-channel
The single N-channel MOSFET configuration provides efficient switching performance and current handling capabilities, suitable for designs requiring high current and high power switching.
3. **Drain-source voltage (VDS)**: 60V
The drain-source voltage is 60V, suitable for medium voltage switching and power management applications, providing stable operating performance.
4. **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, supporting flexible gate drive design and adapting to various control circuit requirements.
5. **Threshold Voltage (Vth)**: 2.5V
The threshold voltage of 2.5V enables the MOSFET to turn on at a lower gate-source voltage, improving switching efficiency and response speed.
6. **RDS(ON)**:
- **12mΩ @ VGS = 4.5V**
- **10mΩ @ VGS = 10V**
Low on-resistance helps reduce power loss and improve overall system efficiency.
7. **Maximum Drain Current (ID)**: 70A
The maximum drain current is 70A, which is suitable for handling high current loads and ensuring stable working performance.
8. **Technology**: Trench
The use of Trench technology optimizes the conduction performance and switching speed of the MOSFET, which is suitable for high-efficiency power conversion and switching applications.
1. **Package**: TO220F
The TO220F package has excellent heat dissipation performance and good electrical connection characteristics, suitable for application scenarios requiring higher power and heat dissipation capabilities.
2. **Configuration**: Single N-channel
The single N-channel MOSFET configuration provides efficient switching performance and current handling capabilities, suitable for designs requiring high current and high power switching.
3. **Drain-source voltage (VDS)**: 60V
The drain-source voltage is 60V, suitable for medium voltage switching and power management applications, providing stable operating performance.
4. **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, supporting flexible gate drive design and adapting to various control circuit requirements.
5. **Threshold Voltage (Vth)**: 2.5V
The threshold voltage of 2.5V enables the MOSFET to turn on at a lower gate-source voltage, improving switching efficiency and response speed.
6. **RDS(ON)**:
- **12mΩ @ VGS = 4.5V**
- **10mΩ @ VGS = 10V**
Low on-resistance helps reduce power loss and improve overall system efficiency.
7. **Maximum Drain Current (ID)**: 70A
The maximum drain current is 70A, which is suitable for handling high current loads and ensuring stable working performance.
8. **Technology**: Trench
The use of Trench technology optimizes the conduction performance and switching speed of the MOSFET, which is suitable for high-efficiency power conversion and switching applications.
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**
IRFI1010GPBF-VB is suitable for **Switching Power Supply (SMPS)** design, especially in power modules with high current output. Its low on-resistance and high current handling capability can significantly improve the conversion efficiency and stability of the power supply, suitable for various consumer electronics and industrial power systems.
2. **DC-DC Converter**
In **DC-DC Converter** applications, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It is used for efficient voltage conversion and current regulation to ensure stable performance under different load conditions.
3. **Electric Vehicle Drive System**
In **Electric Vehicle Drive System**, IRFI1010GPBF-VB can handle large current loads and is suitable for motor control and power management of electric vehicles. Its efficient switching characteristics and low power loss help improve the overall performance and energy efficiency of electric vehicles.
4. **Power Amplifier**
IRFI1010GPBF-VB is suitable for **power amplifier** design. Due to its high current handling capability and low on-resistance, it is suitable for audio amplifiers and wireless communication equipment to improve the power efficiency and stability of the system.
5. **Battery Management System**
In the **battery management system**, this MOSFET can be used for battery protection and charge and discharge control. Its low on-resistance and high current capability ensure efficient battery management and stable operation, suitable for lithium-ion batteries and other high energy density battery systems.
With its excellent electrical performance and high current handling capability, IRFI1010GPBF-VB is suitable for a variety of high-efficiency power switching and power management applications, providing designers with a reliable solution.
1. **Switching Power Supply (SMPS)**
IRFI1010GPBF-VB is suitable for **Switching Power Supply (SMPS)** design, especially in power modules with high current output. Its low on-resistance and high current handling capability can significantly improve the conversion efficiency and stability of the power supply, suitable for various consumer electronics and industrial power systems.
2. **DC-DC Converter**
In **DC-DC Converter** applications, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It is used for efficient voltage conversion and current regulation to ensure stable performance under different load conditions.
3. **Electric Vehicle Drive System**
In **Electric Vehicle Drive System**, IRFI1010GPBF-VB can handle large current loads and is suitable for motor control and power management of electric vehicles. Its efficient switching characteristics and low power loss help improve the overall performance and energy efficiency of electric vehicles.
4. **Power Amplifier**
IRFI1010GPBF-VB is suitable for **power amplifier** design. Due to its high current handling capability and low on-resistance, it is suitable for audio amplifiers and wireless communication equipment to improve the power efficiency and stability of the system.
5. **Battery Management System**
In the **battery management system**, this MOSFET can be used for battery protection and charge and discharge control. Its low on-resistance and high current capability ensure efficient battery management and stable operation, suitable for lithium-ion batteries and other high energy density battery systems.
With its excellent electrical performance and high current handling capability, IRFI1010GPBF-VB is suitable for a variety of high-efficiency power switching and power management applications, providing designers with a reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
