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IRFHS9351TRPBF-VB Product details

Product introduction:

Product Introduction - IRFHS9351TRPBF-VB MOSFET

The IRFHS9351TRPBF-VB is a dual N-channel MOSFET in a DFN6 (2x2)-B package designed for low voltage, high efficiency applications. This MOSFET provides a load switch solution for negative switching and power management tasks. With a maximum drain-source voltage of -30V and a gate-source voltage of ±12V, it has good current handling capability and switching performance. By adopting Trench technology, the IRFHS9351TRPBF-VB performs well at low voltages and can effectively reduce conduction losses, making it suitable for a variety of electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A 38mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2)-B Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2)-B Dual-P+P
Detailed parameter description

- **Model**: IRFHS9351TRPBF-VB
- **Package**: DFN6 (2x2)-B
- **Configuration**: Dual P-channel (P+P)
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 38mΩ @ VGS = 10V
- **Drain current (ID)**: -5.4A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package Type**: DFN6 (2x2)-B, providing compact size and excellent thermal management capabilities.

Domain and module applications:

Applications and modules

1. **Negative switching applications**:
The IRFHS9351TRPBF-VB excels in negative switching applications. Its dual P-channel configuration enables it to perform load switching efficiently, especially for low-side switches in load switching circuits. It is widely used in portable devices, automotive electronics, and small power modules. Its low on-resistance ensures low power consumption and efficient switching.

2. **Power management system**:
In power management systems, the IRFHS9351TRPBF-VB can be used for load switching in power converters and regulators. The low on-resistance and high current handling capability brought by its Trench technology can improve the conversion efficiency of the power supply and reduce the power consumption of the overall system. This makes it suitable for power management modules in laptops, power adapters, and communication equipment.

3. **Load control**:
This MOSFET also performs well in load control applications, such as motor drives and load switches. Its dual P-channel configuration and low on-resistance make it suitable for use as a high-efficiency switch for load control, especially in automotive electronics and industrial automation. For example, it can be used in automotive battery management systems to control switches for high current loads.

4. **Low-voltage switch applications**:
The IRFHS9351TRPBF-VB excels in low-voltage switch applications due to its low threshold voltage and low on-resistance. It is particularly suitable for low-voltage power switches and switching circuits in battery management systems. Its compact DFN6 (2x2)-B package also makes it ideal for small electronic devices and portable applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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