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IRFHM830DTRPBF-VB Product details

Product introduction:

Product Introduction: IRFHM830DTRPBF-VB

IRFHM830DTRPBF-VB is a high-performance N-channel MOSFET, using DFN8 (3x3) package and Trench technology, designed for high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V. Its low on-resistance characteristics make it very suitable for efficient power management. The IRFHM830DTRPBF-VB has an on-resistance of 5mΩ at VGS = 4.5V and 3.9mΩ at VGS = 10V, and can withstand a continuous drain current of up to 60A. This device is suitable for applications with high power density and strict thermal management requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 3.9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description:
1. **Package type**: DFN8 (3x3)
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3.9mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 60A
8. **Working technology**: Trench technology
9. **Power dissipation (Pd)**: Calculated according to the specific application environment
10. **Operating temperature range**: -55°C to 150°C
11. **Total gate charge (Qg)**: Depends on specific driving conditions
12. **Input capacitance (Ciss)**: Parameter that affects switching speed

Domain and module applications:

Application fields and module examples:

1. **High-efficiency DC-DC converter**: The low on-resistance and high current carrying capacity of the IRFHM830DTRPBF-VB make it ideal for use in high-efficiency DC-DC converters. It can maintain high efficiency under high load and high power conditions and is widely used in computer power supplies, power adapters, and industrial power systems.

2. **Electric vehicle battery management system**: This MOSFET is suitable for battery management systems in electric vehicles and can handle high current loads. Its low RDS(ON) can improve system efficiency and reduce energy loss, thereby extending battery life.

3. **Motor drive system**: The IRFHM830DTRPBF-VB is suitable for high-power motor drive systems such as power tools and industrial automation equipment. Its high current handling capability and low on-resistance characteristics ensure efficient and stable operation of motor drive systems.

4. **Switching Power Supply (SMPS)**: In switching power supply modules, the low on-resistance and high current capability of the IRFHM830DTRPBF-VB can reduce switching losses and improve power conversion efficiency, making it suitable for power supply designs in a variety of consumer electronics and communication equipment.

5. **Solar Inverter**: This MOSFET is also very suitable for photovoltaic inverters. Its high current handling capability and low RDS(ON) can improve the overall efficiency of solar power generation systems, ensuring stable conversion of DC to AC, thereby optimizing energy utilization.

The excellent performance of the IRFHM830DTRPBF-VB makes it an ideal choice for high power density and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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