Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
100V |
|
1.8V |
12.1A |
|
|
71mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
100V |
|
1.8V |
12.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
100V |
|
1.8V |
12.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: DFN8 (3x3)-B
The small package (3x3mm) provides good space utilization and thermal management, suitable for compact design and high power density applications.
- **Configuration**: Dual N-channel
The dual N-channel MOSFET design allows multiple current paths to be processed simultaneously, suitable for dual-channel switching or parallel applications.
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, suitable for medium voltage switching applications and capable of handling higher voltage loads.
- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, supporting a variety of drive voltages to ensure stable operation of the MOSFET.
- **Threshold Voltage (Vth)**: 1.8V
The low threshold voltage (1.8V) enables the MOSFET to turn on at a lower gate voltage, suitable for low voltage drive circuits.
- **On-state Resistance (RDS(ON))**: 71mΩ @ VGS = 10V
At a gate drive of 10V, the on-resistance is 71mΩ, providing low power consumption and high-efficiency current switching capability.
- **Drain Current (ID)**: 12.1A
The maximum drain current is 12.1A, suitable for applications handling medium current loads.
- **Technology**: Trench
Using **Trench** technology, it provides low on-resistance and excellent switching performance, suitable for high frequency and high power applications.
Domain and module applications:
Application fields and module examples:
1. **Power Management and Switching**:
**IRFHM792TRPBF-VB**'s dual N-channel design is ideal for power management modules such as DC-DC converters, load switches, and power distribution circuits. Its high current handling capability and low on-resistance ensure efficient power conversion and low power operation, and are widely used in computer power supplies, power adapters, and industrial power modules.
2. **Electric Vehicles and Battery Management**:
In electric vehicles and battery management systems, this MOSFET can be used as a battery switch, motor drive, and battery protection circuit. The dual N-channel configuration enables efficient current switching and protection, enhancing the performance and reliability of battery management systems.
3. **High-Efficiency Motor Drives**:
**IRFHM792TRPBF-VB** is suitable for use in high-efficiency motor drive systems, such as stepper motor drives and brushless DC motor (BLDC) control. Its high current capability and low on-resistance provide stable current control and optimize motor drive performance.
4. **Consumer Electronics**:
In consumer electronics, such as smartphones, tablets, and home appliances, **IRFHM792TRPBF-VB** can be used for a variety of switching and power management applications. Its compact package and efficient current handling capability are suitable for high-density and power-sensitive electronic device designs.
**IRFHM792TRPBF-VB**, with its dual N-channel configuration, high current handling capability, and low on-resistance, provides reliable and efficient current control solutions in multiple fields and is a key component in many high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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